Manufacturer Part Number:

PMBF4393.215

OneIC Part Number:
229-PMBF4393-215
Manufacturer:

nxp semiconductors

microsemi
Description:
Trans JFET N-CH 40V 30mA 3-Pin TO-236AB T/R
Customer Reference:
Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type Description
Package 3TO-236AB
Configuration Single
Maximum Drain Source Voltage 40 V
Maximum Continuous Drain Current 30 mA
Maximum Gate Source Voltage -40 V
Operating Temperature -65 to 150 °C
Mounting Surface Mount
Standard Package Tape & Reel
Supplier Package TO-236AB
Maximum Gate Source Voltage -40
EU RoHS Compliant
Maximum Operating Temperature 150
Standard Package Name SOT-23
Package Height 1(Max)
Maximum Power Dissipation 250
Maximum Drain Gate Voltage 40
Channel Type N
Packaging Tape and Reel
Package Width 1.4(Max)
Maximum Continuous Drain Current 30
PCB 3
Package Length 3(Max)
Minimum Operating Temperature -65
Maximum Drain Source Voltage 40
Pin Count 3
Lead Shape Gull-wing
Voltage - Breakdown (V(BR)GSS) 40V
Mounting Type Surface Mount
Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 20V
Resistance - RDS(On) 100 Ohm
Supplier Device Package SOT-23-3
Voltage - Cutoff (VGS off) @ Id 500mV @ 1nA
FET Type N-Channel
Power - Max 250mW
Package / Case TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss) 40V
Input Capacitance (Ciss) @ Vds 14pF @ 20V
rohs Lead free / RoHS Compliant
Other Names 568-5032-1
Dimensions 3 x 1.4 x 1mm
Height 1mm
Length 3mm
Maximum Drain Gate Voltage 40V
Maximum Drain Source Resistance
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -65 °C
Package Type TO-236AB
Width 1.4mm
Continuous Drain Current 0.03 A
Gate-Source Voltage (Max) -40 V
Operating Temperature (Max) 150C
Operating Temperature (Min) -65C
Operating Temperature Classification Military
Drain-Gate Voltage (Max) 40 V
Drain-Source Volt (Max) 40 V
Rad Hardened No
漏源极电压 (Vdss) 40V
不同 Vds 时的输入电容 (Ciss) 14pF @ 20V
FET 类型 N-Channel
电压 - 击穿 (V(BR)GSS) 40V
不同 Id 时的电压 - 截止(VGS 关) 500mV @ 1nA
封装/外壳 TO-236-3, SC-59, SOT-23-3
电阻 - RDS(开) 100 Ohm
功率 - 最大值 250mW
不同 Vds (Vgs=0) 时的电流 - 漏极 (Idss) 5mA @ 20V
最大漏源电压 40 V
长度 3mm
配置
Board Level Components Y
最高工作温度 +150 °C
高度 1mm
通道类型 N
安装类型 表面贴装
最低工作温度 -65 °C
Idss 漏-源切断电流 50 → 150mA
最大栅源电压 -40 V
宽度 1.4mm
封装类型 SOT-23
引脚数目 3
最大漏源电阻值 100 Ω
尺寸 3 x 1.4 x 1mm
最大漏门电压 40V
Factory Pack Quantity 3000
Vds - Drain-Source Breakdown Voltage 40 V
Transistor Polarity N-Channel
Brand NXP Semiconductors
Id - Continuous Drain Current 5 mA
Mounting Style SMD/SMT
Rds On - Drain-Source Resistance 100 Ohms
Pd - Power Dissipation 250 mW
Vgs - Gate-Source Breakdown Voltage 40 V
Technology Si
RoHS RoHS Compliant

Documents & Media

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Datasheets PMBF4391-4393
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