NXP Semiconductors
Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
| Type | Description |
|---|---|
| Supplier Package | TO-236AB |
| Maximum Gate Source Voltage | -40 |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 150 |
| Configuration | Single |
| Standard Package Name | SOT-23 |
| Package Height | 1(Max) |
| Mounting | Surface Mount |
| Maximum Power Dissipation | 300 |
| Channel Type | N |
| Packaging | Tape and Reel |
| Package Width | 1.4(Max) |
| Maximum Drain Gate Voltage | -40 |
| PCB | 3 |
| Package Length | 3(Max) |
| Minimum Operating Temperature | -65 |
| Maximum Drain Source Voltage | 40 |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Mounting Type | Surface Mount |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2mA @ 15V |
| Resistance - RDS(On) | 100 Ohm |
| Supplier Device Package | SOT-23-3 |
| Voltage - Cutoff (VGS off) @ Id | 3V @ 1µA |
| FET Type | N-Channel |
| Power - Max | 300mW |
| Standard Package | 3,000 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Drain to Source Voltage (Vdss) | 40V |
| Input Capacitance (Ciss) @ Vds | 6pF @ 10V (VGS) |
| rohs | Lead free / RoHS Compliant |
| Other Names | 568-6482-1 |
| Dimensions | 3 x 1.4 x 1mm |
| Height | 1mm |
| Length | 3mm |
| Maximum Drain Gate Voltage | -40V |
| Maximum Drain Source Resistance | 100 Ω |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Source Voltage | -40 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Package Type | TO-236AB |
| Width | 1.4mm |
| Factory Pack Quantity | 3000 |
| Drain Source Voltage VDS | 40 V |
| Product Category | Transistors RF JFET |
| Transistor Polarity | N-Channel |
| Gate-Source Breakdown Voltage | - 40 V |
| Type | Silicon |
| Product | RF JFET |
| Rds On | 100 Ohms |
| Power Dissipation | 300 mW |
| Mounting Style | SMD/SMT |
| Drain-Source Current at Vgs=0 | 2 mA |
| Part # Aliases | PMBFJ113 T/R |
| Gate-Source Cutoff Voltage | - 0.5 V |
| RoHS | RoHS Compliant |
| Gate-Source Voltage (Max) | -40 V |
| Operating Temperature (Max) | 150C |
| Operating Temperature (Min) | -65C |
| Operating Temperature Classification | Military |
| Drain-Gate Voltage (Max) | -40 V |
| Drain-Source Volt (Max) | 40 V |
| Rad Hardened | No |
| 漏源极电压 (Vdss) | 40V |
| 不同 Vds 时的输入电容 (Ciss) | 6pF @ 10V (VGS) |
| FET 类型 | N-Channel |
| 电压 - 击穿 (V(BR)GSS) | 40V |
| 不同 Id 时的电压 - 截止（VGS 关） | 3V @ 1µA |
| 封装/外壳 | TO-236-3, SC-59, SOT-23-3 |
| 电阻 - RDS（开） | 100 Ohm |
| 功率 - 最大值 | 300mW |
| 不同 Vds (Vgs=0) 时的电流 - 漏极 (Idss) | 2mA @ 15V |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | PMBFJ111-113 |
| QTY | UNIT PRICE | EXT PRICE |
|---|
| Company |
|
|---|---|
| Delivery | 3-5days |
| Costs | $75+ |
| Company |
|
|---|---|
| Delivery | 7-10days |
| Costs | $25+ |
Fedex,
UPS,
DHL
OnTrac,
LaserShip,
USPS,
Zippex,etc