Manufacturer Part Number:

PRF957,115

OneIC Part Number:
229-PRF957-115
Manufacturer:

nxp semiconductors

microsemi
Description:
Trans GP BJT NPN 10V 0.1A 3-Pin SC-70 T/R
Customer Reference:
Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type Description
Package 3SC-70
Type NPN
Pin Count 3
Maximum Collector Emitter Voltage 10 V
Maximum DC Collector Current 0.1 A
Minimum DC Current Gain 50@5mA@6V
Maximum Operating Frequency 8500(Typ) MHz
Maximum Collector Base Voltage 20 V
Operating Temperature -65 to 175 °C
Maximum Power Dissipation 270 mW
Mounting Surface Mount
Standard Package Tape & Reel
Maximum DC Collector Current 0.1
Minimum Operating Temperature -65
Maximum Transition Frequency 8500(Typ)
Package Width 1.35(Max)
PCB 3
Maximum Power Dissipation 270
EU RoHS Compliant
Number of Elements per Chip 1
Maximum Collector Base Voltage 20
Maximum Collector Emitter Voltage 10
Supplier Package SC-70
Standard Package Name SOT-323
Maximum Operating Temperature 175
Package Length 2.2(Max)
Package Height 1(Max)
Maximum Emitter Base Voltage 1.5
Packaging Tape and Reel
Lead Shape Gull-wing
Current - Collector (Ic) (Max) 100mA
Noise Figure (dB Typ @ f) 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
Transistor Type NPN
Mounting Type Surface Mount
Frequency - Transition 8.5GHz
Voltage - Collector Emitter Breakdown (Max) 10V
Supplier Device Package SOT-323
Power - Max 270mW
Package / Case SC-70, SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 6V
rohs Lead free / RoHS Compliant
Other Names 568-1177-1
Category Bipolar RF
Configuration Single
Dimensions 1 x 2.2 x 1.35mm
Height 1mm
Length 2.2mm
Maximum Emitter Base Voltage 1.5 V
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -65 °C
Package Type UMT
Width 1.35mm
Factory Pack Quantity 3000
Product Category Transistors RF Bipolar
Transistor Polarity NPN
Emitter- Base Voltage VEBO 1.5 V
Mounting Style SMD/SMT
Power Dissipation 270 mW
Collector- Emitter Voltage VCEO Max 10 V
Part # Aliases PRF957 T/R
RoHS RoHS Compliant
Continuous Collector Current 0.1 A
Collector Current (DC) (Max) 0.1 A
Collector-Base Voltage 20 V
Collector-Emitter Voltage 10 V
Emitter-Base Voltage 1.5 V
Frequency 8500 MHz
Operating Temp Range -65C to 175C
Number of Elements 1
DC Current Gain (Min) 50
Operating Temperature Classification Military
Rad Hardened No
DC Current Gain 50
Collector Current (DC) 0.1 A
频率 - 跃迁 8.5GHz
晶体管类型 NPN
不同 Ic、Vce 时的 DC 电流增益 (hFE)(最小值) 50 @ 5mA, 6V
封装/外壳 SC-70, SOT-323
功率 - 最大值 270mW
噪声系数(dB,不同 f 时的典型值) 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
电流 - 集电极 (Ic)(最大值) 100mA
电压 - 集射极击穿(最大值) 10V
最高工作频率 8500 MHz
最大直流集电极电流 0.1 A
长度 2.2mm
最高工作温度 +175 °C
安装类型 表面贴装
最低工作温度 -65 °C
高度 1mm
最大功率耗散 0.27 W
宽度 1.35mm
封装类型 UMT
最大集电极-发射极电压 10 V
引脚数目 3
最小直流电流增益 50
尺寸 1 x 2.2 x 1.35mm
晶体管配置
最大发射极-基极电压 1.5 V
每片芯片元件数目 1
最大集电极-基极电压 20 V
Brand NXP Semiconductors
DC Current Gain hFE Max 50
Operating Frequency 8500 MHz
Gain Bandwidth Product fT 8500 MHz
Collector- Base Voltage VCBO 20 V
Pd - Power Dissipation 270 mW
Technology Si
DC Collector/Base Gain hfe Min 50

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