Manufacturer Part Number:

IXFN110N60P3

OneIC Part Number:

184-IXFN110N60P3

Manufacturer:

IXYS

Description:

MOSFET 600V 90A 0.056Ohm PolarP3 Power MOSFET

Customer Reference:

Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type	Description
FET Feature	Standard
Packaging	Tube
Mounting Type	Chassis Mount
Current - Continuous Drain (Id) @ 25° C	90A
Vgs(th) (Max) @ Id	5V @ 8mA
Drain to Source Voltage (Vdss)	600V
Supplier Device Package	SOT-227B
Rds On (Max) @ Id, Vgs	56 mOhm @ 55A, 10V
FET Type	MOSFET N-Channel, Metal Oxide
Power - Max	1500W
Standard Package	10
Input Capacitance (Ciss) @ Vds	18000pF @ 25V
Gate Charge (Qg) @ Vgs	245nC @ 10V
Package/Case	SOT-227-4, miniBLOC
Mounting Style	SMD/SMT
Configuration	Single
Transistor Polarity	N-Channel
Gate-Source Breakdown Voltage	30 V
Continuous Drain Current	90 A
Forward Transconductance - Min	105 S, 65 S
Rds On	56 mOhms
Power Dissipation	1500 W
Package / Case	SOT-227
Gate Charge Qg	245 nC
Rise Time	19 ns
Drain-Source Breakdown Voltage	600 V
RoHS	RoHS Compliant
Fall Time	11 ns
安装类型	面板安装
晶体管材料	Si
类别	功率 MOSFET
长度	38.23mm
典型输入电容值@Vds	18000 pF @ 25 V
系列	HiperFET, Polar3
通道模式	增强
高度	9.6mm
每片芯片元件数目	1
最大漏源电阻值	56 mΩ
最大栅阈值电压	5V
最高工作温度	+150 °C
通道类型	N
最低工作温度	-55 °C
最大功率耗散	1500 W
最大栅源电压	±30 V
宽度	25.07mm
尺寸	38.23 x 25.07 x 9.6mm
最大漏源电压	600 V
典型接通延迟时间	63 ns
典型关断延迟时间	77 ns
封装类型	SOT-227B
最大连续漏极电流	90 A
引脚数目	4
晶体管配置	单
典型栅极电荷@Vgs	245 nC @ 10 V
Factory Pack Quantity	10
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	5 V
Qg - Gate Charge	245 nC
Brand	IXYS
Number of Channels	1 Channel
Tradename	HyperFET
Transistor Type	1 N-Channel
Id - Continuous Drain Current	90 A
Rds On - Drain-Source Resistance	56 mOhms
Series	IXFN110N60
Pd - Power Dissipation	1.5 kW
Technology	Si

Documents & Media

RESOURCE TYPE	LINK
Datasheets	IXFN110N60P3

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