IXYS
Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
| Type | Description |
|---|---|
| Maximum Gate Source Voltage | ±20 |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 150 |
| Channel Mode | Enhancement |
| Standard Package Name | SOT-227 |
| Mounting | Screw |
| Maximum Power Dissipation | 600000 |
| Channel Type | N |
| Maximum Drain Source Resistance | 17@10V |
| Minimum Operating Temperature | -55 |
| Maximum Drain Source Voltage | 200 |
| Number of Elements per Chip | 1 |
| Package Width | 25.42(Max) |
| Supplier Package | SOT-227B |
| Package Length | 38.23(Max) |
| PCB | 4 |
| Maximum Continuous Drain Current | 120 |
| Pin Count | 4 |
| Lead Shape | Screw |
| FET Feature | Standard |
| Packaging | Tube |
| Mounting Type | Chassis Mount |
| Current - Continuous Drain (Id) @ 25° C | 120A |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Drain to Source Voltage (Vdss) | 200V |
| Supplier Device Package | SOT-227B |
| Rds On (Max) @ Id, Vgs | 17 mOhm @ 500mA, 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Power - Max | 600W |
| Standard Package | 10 |
| Input Capacitance (Ciss) @ Vds | 9100pF @ 25V |
| Gate Charge (Qg) @ Vgs | 360nC @ 10V |
| Package/Case | SOT-227-4, miniBLOC |
| rohs | Request inventory verification / Request inventory verification |
| Factory Pack Quantity | 10 |
| Transistor Polarity | N-Channel |
| Continuous Drain Current | 120 A |
| Package / Case | SOT-227B |
| Fall Time | 40 ns |
| Product Category | MOSFET |
| Unit Weight | 1.340411 oz |
| Configuration | Single Dual Source |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 77 s |
| RoHS | RoHS Compliant |
| Typical Turn-Off Delay Time | 110 ns |
| Gate-Source Breakdown Voltage | +/- 20 V |
| Series | IXFN120N20 |
| Rds On | 17 mOhms |
| Mounting Style | SMD/SMT |
| Power Dissipation | 600 W |
| Minimum Operating Temperature | - 55 C |
| Rise Time | 55 ns |
| Drain-Source Breakdown Voltage | 200 V |
| Case | SOT227B |
| Transistor type | N-MOSFET |
| Power | 600W |
| Drain-source voltage | 200V |
| Polarisation | unipolar |
| Drain current | 120A |
| Multiplicity | 1 |
| Gross weight | 0.05 kg |
| On-state resistance | 17mΩ |
| Collective package [pcs] | 10 |
| Schematic diagram | see |
| spg | 10 |
| 漏源极电压 (Vdss) | 200V |
| 系列 | HiPerFET™ |
| 不同 Vds 时的输入电容 (Ciss) | 9100pF @ 25V |
| 不同 Id、Vgs 时的 Rds On（最大值） | 17 mOhm @ 500mA, 10V |
| 不同 Vgs 时的栅极电荷 (Qg) | 360nC @ 10V |
| FET 功能 | Standard |
| FET 类型 | MOSFET N-Channel, Metal Oxide |
| 不同 Id 时的 Vgs(th)（最大值） | 4V @ 8mA |
| 封装/外壳 | SOT-227-4, miniBLOC |
| 功率 - 最大值 | 600W |
| Polarity | N |
| Closing resistance | 17 mOhm |
| Recovery time | 250 ns |
| Power dissipation | 600 |
| Operating temperature | -55...150 °C |
| Housing type | SOT-227B |
| Drain source voltage | 200 V |
| Variants | Enhancement mode |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Width | 25.42 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Brand | IXYS |
| Number of Channels | 1 Channel |
| Tradename | HyperFET |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 120 A |
| Length | 38.23 mm |
| Rds On - Drain-Source Resistance | 17 mOhms |
| Height | 9.6 mm |
| Typical Turn-On Delay Time | 42 ns |
| Pd - Power Dissipation | 600 W |
| Technology | Si |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | IXFN120N20 |
| QTY | UNIT PRICE | EXT PRICE |
|---|
| Company |
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|---|---|
| Delivery | 3-5days |
| Costs | $75+ |
| Company |
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|---|---|
| Delivery | 7-10days |
| Costs | $25+ |
Fedex,
UPS,
DHL
OnTrac,
LaserShip,
USPS,
Zippex,etc