Manufacturer Part Number:

IXFN230N10

OneIC Part Number:

184-IXFN230N10

Manufacturer:

IXYS

Description:

MOSFET 230 Amps 100V 0.006 Rds

Customer Reference:

Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type	Description
Maximum Gate Source Voltage	±20
EU RoHS	Compliant
Maximum Operating Temperature	150
Channel Mode	Enhancement
Standard Package Name	SOT-227
Mounting	Screw
Maximum Power Dissipation	700000
Channel Type	N
Maximum Drain Source Resistance	6@10V
Minimum Operating Temperature	-55
Maximum Drain Source Voltage	100
Number of Elements per Chip	1
Package Width	25.42(Max)
Supplier Package	SOT-227B
Package Length	38.23(Max)
PCB	4
Maximum Continuous Drain Current	230
Pin Count	4
Lead Shape	Screw
FET Feature	Standard
Packaging	Tube
Mounting Type	Chassis Mount
Current - Continuous Drain (Id) @ 25° C	230A
Vgs(th) (Max) @ Id	4V @ 8mA
Drain to Source Voltage (Vdss)	100V
Supplier Device Package	SOT-227B
Rds On (Max) @ Id, Vgs	6 mOhm @ 500mA, 10V
FET Type	MOSFET N-Channel, Metal Oxide
Power - Max	700W
Standard Package	10
Input Capacitance (Ciss) @ Vds	19000pF @ 25V
Gate Charge (Qg) @ Vgs	570nC @ 10V
Package/Case	SOT-227-4, miniBLOC
rohs	Lead free / RoHS Compliant
Category	Power MOSFET
Configuration	Dual Source, Single
Dimensions	38.23 x 25.42 x 9.6mm
Height	9.6mm
Length	38.23mm
Maximum Continuous Drain Current	230 A
Maximum Drain Source Resistance	0.006 Ω
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	±20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	700 W
Minimum Operating Temperature	-55 °C
Package Type	SOT-227B
Typical Gate Charge @ Vgs	570 nC V @ 10
Typical Input Capacitance @ Vds	19000 pF V @ 25
Typical Turn-Off Delay Time	112 ns
Typical Turn-On Delay Time	40 ns
Width	25.42mm
Factory Pack Quantity	10
Transistor Polarity	N-Channel
Gate-Source Breakdown Voltage	+/- 20 V
Continuous Drain Current	230 A
Series	IXFN230N10
Unit Weight	1.340411 oz
Rds On	6.5 mOhms
Power Dissipation	700 W
Mounting Style	SMD/SMT
Package / Case	SOT-227B
Rise Time	150 ns
Drain-Source Breakdown Voltage	100 V
RoHS	RoHS Compliant
Fall Time	60 ns
Frequency (Max)	Not Required MHz
Gate-Source Voltage (Max)	�20 V
Output Power (Max)	Not Required W
Noise Figure	Not Required dB
Drain-Source On-Res	0.006 ohm
Operating Temp Range	-55C to 150C
Polarity	N
Type	Power MOSFET
Number of Elements	1
Operating Temperature Classification	Military
Drain Efficiency	Not Required %
Drain-Source On-Volt	100 V
Power Gain	Not Required dB
Rad Hardened	No
DELETED	Compliant
漏源极电压 (Vdss)	100V
系列	HiPerFET™
不同 Vds 时的输入电容 (Ciss)	19000pF @ 25V
不同 Id、Vgs 时的 Rds On（最大值）	6 mOhm @ 500mA, 10V
不同 Vgs 时的栅极电荷 (Qg)	570nC @ 10V
FET 功能	Standard
FET 类型	MOSFET N-Channel, Metal Oxide
不同 Id 时的 Vgs(th)（最大值）	4V @ 8mA
封装/外壳	SOT-227-4, miniBLOC
功率 - 最大值	700W
Closing resistance	6 mOhm
Recovery time	250 ns
Drain current	230 A
Power dissipation	700
Operating temperature	-55...150 °C
Housing type	SOT-227B
Drain source voltage	100 V
Variants	Enhancement mode
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	20 V
Brand	IXYS
Number of Channels	1 Channel
Tradename	HyperFET
Transistor Type	1 N-Channel
Id - Continuous Drain Current	230 A
Rds On - Drain-Source Resistance	6.5 mOhms
Pd - Power Dissipation	700 W
Technology	Si

Documents & Media

RESOURCE TYPE	LINK
Datasheets	IXFN230N10

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