Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
Type | Description |
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FET Feature | Standard |
Packaging | Tube |
Mounting Type | Chassis Mount |
Current - Continuous Drain (Id) @ 25° C | 240A |
Vgs(th) (Max) @ Id | 5V @ 8mA |
Drain to Source Voltage (Vdss) | 150V |
Supplier Device Package | SOT-227B |
Rds On (Max) @ Id, Vgs | 5.2 mOhm @ 60A, 10V |
FET Type | MOSFET N-Channel, Metal Oxide |
Power - Max | 830W |
Standard Package | 10 |
Input Capacitance (Ciss) @ Vds | 32000pF @ 25V |
Gate Charge (Qg) @ Vgs | 460nC @ 10V |
Package/Case | SOT-227-4, miniBLOC |
Factory Pack Quantity | 10 |
Minimum Operating Temperature | - 55 C |
Series | IXFN240N15 |
Mounting Style | SMD/SMT |
Tradename | HiPerFET |
Package / Case | SOT-227B |
Rise Time | 125 ns |
Maximum Operating Temperature | + 175 C |
RoHS | RoHS Compliant |
Fall Time | 145 ns |
Vds - Drain-Source Breakdown Voltage | 150 V |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 460 nC |
Vgs - Gate-Source Voltage | 20 V |
Type | GigaMOS Trench T2 HiperFet |
Brand | IXYS |
Forward Transconductance - Min | 125 S |
Id - Continuous Drain Current | 240 A |
Rds On - Drain-Source Resistance | 5.2 mOhms |
Typical Turn-Off Delay Time | 77 ns |
Channel Mode | Enhancement |
Typical Turn-On Delay Time | 48 ns |
Pd - Power Dissipation | 830 W |
Technology | Si |
RESOURCE TYPE | LINK |
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Datasheets | IXFN240N15T2 |
QTY | UNIT PRICE | EXT PRICE |
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Company |
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Delivery | 3-5days |
Costs | $75+ |
Company |
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Delivery | 7-10days |
Costs | $25+ |