Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
Type | Description |
---|---|
FET Feature | Standard |
Packaging | Tube |
Mounting Type | Chassis Mount |
Current - Continuous Drain (Id) @ 25° C | 260A |
Vgs(th) (Max) @ Id | 5V @ 8mA |
Drain to Source Voltage (Vdss) | 170V |
Supplier Device Package | SOT-227B |
Rds On (Max) @ Id, Vgs | 5.2 mOhm @ 60A, 10V |
FET Type | MOSFET N-Channel, Metal Oxide |
Power - Max | 1070W |
Standard Package | 10 |
Input Capacitance (Ciss) @ Vds | 45000pF @ 25V |
Gate Charge (Qg) @ Vgs | 640nC @ 10V |
Package/Case | SOT-227-4, miniBLOC |
Factory Pack Quantity | 10 |
Transistor Polarity | N-Channel |
Continuous Drain Current | 260 A |
Package / Case | SOT-227B |
Fall Time | 230 ns |
Mounting Style | SMD/SMT |
Tradename | HiPerFET |
Configuration | Single |
Maximum Operating Temperature | + 175 C |
Forward Transconductance - Min | 120 S |
RoHS | RoHS Compliant |
Typical Turn-Off Delay Time | 115 ns |
Gate-Source Breakdown Voltage | +/- 20 V |
Series | IXFN320N17 |
Rds On | 5.2 mOhms |
Power Dissipation | 1070 W |
Minimum Operating Temperature | - 55 C |
Rise Time | 170 ns |
Drain-Source Breakdown Voltage | 170 V |
Gate Charge Qg | 640 nC |
Vds - Drain-Source Breakdown Voltage | 170 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 5 V |
Qg - Gate Charge | 640 nC |
Type | GigaMOS Trench T2 HiperFet |
Brand | IXYS |
Number of Channels | 1 Channel |
Transistor Type | 1 N-Channel |
Id - Continuous Drain Current | 260 A |
Rds On - Drain-Source Resistance | 5.2 mOhms |
Channel Mode | Enhancement |
Typical Turn-On Delay Time | 46 ns |
Pd - Power Dissipation | 1.07 kW |
Technology | Si |
RESOURCE TYPE | LINK |
---|---|
Datasheets | IXFN320N17T2 |
QTY | UNIT PRICE | EXT PRICE |
---|
Company |
|
---|---|
Delivery | 3-5days |
Costs | $75+ |
Company |
|
---|---|
Delivery | 7-10days |
Costs | $25+ |