Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
Type | Description |
---|---|
Maximum Gate Source Voltage | ±20 |
EU RoHS | Compliant |
Maximum Operating Temperature | 150 |
Channel Mode | Enhancement |
Standard Package Name | SOT-227 |
Mounting | Screw |
Maximum Power Dissipation | 700000 |
Channel Type | N |
Maximum Drain Source Resistance | 4@10V |
Minimum Operating Temperature | -55 |
Maximum Drain Source Voltage | 70 |
Number of Elements per Chip | 1 |
Package Width | 25.42(Max) |
Supplier Package | SOT-227B |
Package Length | 38.23(Max) |
PCB | 4 |
Maximum Continuous Drain Current | 340 |
Pin Count | 4 |
Lead Shape | Screw |
FET Feature | Standard |
Packaging | Tube |
Mounting Type | Chassis Mount |
Current - Continuous Drain (Id) @ 25° C | 340A |
Vgs(th) (Max) @ Id | 4V @ 8mA |
Drain to Source Voltage (Vdss) | 70V |
Supplier Device Package | SOT-227B |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 100A, 10V |
FET Type | MOSFET N-Channel, Metal Oxide |
Power - Max | 700W |
Standard Package | 10 |
Input Capacitance (Ciss) @ Vds | 12200pF @ 25V |
Gate Charge (Qg) @ Vgs | 490nC @ 10V |
Package/Case | SOT-227-4, miniBLOC |
rohs | Lead free / RoHS Compliant |
Factory Pack Quantity | 10 |
Transistor Polarity | N-Channel |
Continuous Drain Current | 340 A |
Package / Case | SOT-227B-4 |
Fall Time | 33 ns |
Product Category | MOSFET |
Unit Weight | 1.340411 oz |
Tradename | HiPerFET |
Configuration | Single Dual Source |
Maximum Operating Temperature | + 150 C |
Forward Transconductance - Min | 80 s |
RoHS | RoHS Compliant |
Typical Turn-Off Delay Time | 200 ns |
Gate-Source Breakdown Voltage | +/- 20 V |
Series | IXFN340N07 |
Rds On | 4 mOhms |
Mounting Style | SMD/SMT |
Power Dissipation | 700 W |
Minimum Operating Temperature | - 55 C |
Rise Time | 95 ns |
Drain-Source Breakdown Voltage | 70 V |
Gate Charge Qg | 490 nC |
Case | SOT227B |
Transistor type | N-MOSFET |
Power | 700W |
Drain-source voltage | 70V |
Polarisation | unipolar |
Drain current | 340A |
Multiplicity | 1 |
Gross weight | 0.05 kg |
Collective package [pcs] | 10 |
spg | 10 |
漏源极电压 (Vdss) | 70V |
系列 | HiPerFET™ |
不同 Vds 时的输入电容 (Ciss) | 12200pF @ 25V |
不同 Id、Vgs 时的 Rds On(最大值) | 4 mOhm @ 100A, 10V |
不同 Vgs 时的栅极电荷 (Qg) | 490nC @ 10V |
FET 功能 | Standard |
FET 类型 | MOSFET N-Channel, Metal Oxide |
不同 Id 时的 Vgs(th)(最大值) | 4V @ 8mA |
封装/外壳 | SOT-227-4, miniBLOC |
功率 - 最大值 | 700W |
Vds - Drain-Source Breakdown Voltage | 70 V |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Width | 25.42 mm |
Qg - Gate Charge | 490 nC |
Vgs - Gate-Source Voltage | 20 V |
Type | HiPerFET Power MOSFET |
Brand | IXYS |
Number of Channels | 1 Channel |
Transistor Type | 1 N-Channel |
Id - Continuous Drain Current | 340 A |
Length | 38.23 mm |
Rds On - Drain-Source Resistance | 4 mOhms |
Height | 12.22 mm |
Typical Turn-On Delay Time | 100 ns |
Pd - Power Dissipation | 700 W |
Technology | Si |
RESOURCE TYPE | LINK |
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Datasheets | IXFN340N07 |
QTY | UNIT PRICE | EXT PRICE |
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Company |
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Delivery | 3-5days |
Costs | $75+ |
Company |
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Delivery | 7-10days |
Costs | $25+ |