IXYS
Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
| Type | Description |
|---|---|
| FET Feature | Standard |
| Packaging | Tube |
| Mounting Type | Chassis Mount |
| Current - Continuous Drain (Id) @ 25° C | 310A |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Drain to Source Voltage (Vdss) | 150V |
| Supplier Device Package | SOT-227B |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 60A, 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Power - Max | 1070W |
| Standard Package | 10 |
| Input Capacitance (Ciss) @ Vds | 47500pF @ 25V |
| Gate Charge (Qg) @ Vgs | 715nC @ 10V |
| Package/Case | SOT-227-4, miniBLOC |
| Factory Pack Quantity | 10 |
| Minimum Operating Temperature | - 55 C |
| Series | IXFN360N15 |
| Mounting Style | SMD/SMT |
| Tradename | HiPerFET |
| Package / Case | SOT-227B |
| Rise Time | 170 ns |
| Maximum Operating Temperature | + 175 C |
| RoHS | RoHS Compliant |
| Fall Time | 265 ns |
| Rds On - Drain-Source Resistance | 4 mOhms |
| Transistor Polarity | N-Channel |
| Type | GigaMOS Trench T2 HiperFet |
| Brand | IXYS |
| Id - Continuous Drain Current | 310 A |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Number of Channels | 1 Channel |
| Transistor Type | 1 N-Channel |
| Technology | Si |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | IXFN360N15T2 |
| QTY | UNIT PRICE | EXT PRICE |
|---|
| Company |
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|---|---|
| Delivery | 3-5days |
| Costs | $75+ |
| Company |
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|---|---|
| Delivery | 7-10days |
| Costs | $25+ |
Fedex,
UPS,
DHL
OnTrac,
LaserShip,
USPS,
Zippex,etc