Manufacturer Part Number:

IXFN44N50

OneIC Part Number:

184-IXFN44N50

Manufacturer:

IXYS

Description:

MOSFET 500V 44A

Customer Reference:

Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type	Description
Maximum Gate Source Voltage	±20
EU RoHS	Compliant
Maximum Operating Temperature	150
Channel Mode	Enhancement
Standard Package Name	SOT-227
Mounting	Screw
Maximum Power Dissipation	520000
Channel Type	N
Maximum Drain Source Resistance	120@10V
Minimum Operating Temperature	-55
Maximum Drain Source Voltage	500
Number of Elements per Chip	1
Package Width	25.42(Max)
Supplier Package	SOT-227B
Package Length	38.23(Max)
PCB	4
Maximum Continuous Drain Current	44
Pin Count	4
Lead Shape	Screw
FET Feature	Standard
Packaging	Tube
Mounting Type	Chassis Mount
Current - Continuous Drain (Id) @ 25° C	44A
Vgs(th) (Max) @ Id	4V @ 8mA
Drain to Source Voltage (Vdss)	500V
Supplier Device Package	SOT-227B
Rds On (Max) @ Id, Vgs	120 mOhm @ 500mA, 10V
FET Type	MOSFET N-Channel, Metal Oxide
Power - Max	520W
Standard Package	10
Input Capacitance (Ciss) @ Vds	8400pF @ 25V
Gate Charge (Qg) @ Vgs	270nC @ 10V
Package/Case	SOT-227-4, miniBLOC
rohs	Lead free / RoHS Compliant
Factory Pack Quantity	10
Transistor Polarity	N-Channel
Continuous Drain Current	44 A
Package / Case	SOT-227B
Fall Time	30 ns
Product Category	MOSFET
Unit Weight	1.340411 oz
Configuration	Single Dual Source
Maximum Operating Temperature	+ 150 C
Forward Transconductance - Min	42 s
RoHS	RoHS Compliant
Typical Turn-Off Delay Time	100 ns
Gate-Source Breakdown Voltage	+/- 20 V
Series	IXFN44N50
Rds On	120 mOhms
Mounting Style	SMD/SMT
Power Dissipation	520 W
Minimum Operating Temperature	- 55 C
Rise Time	60 ns
Drain-Source Breakdown Voltage	500 V
Gate-Source Voltage (Max)	�20 V
Drain-Source On-Res	0.12 ohm
Operating Temp Range	-55C to 150C
Package Type	SOT-227B
Polarity	N
Type	Power MOSFET
Number of Elements	1
Operating Temperature Classification	Military
Drain-Source On-Volt	500 V
Rad Hardened	No
Vds - Drain-Source Breakdown Voltage	500 V
Width	25.42 mm
Vgs - Gate-Source Voltage	20 V
Brand	IXYS
Number of Channels	1 Channel
Tradename	HyperFET
Transistor Type	1 N-Channel
Id - Continuous Drain Current	44 A
Length	38.23 mm
Rds On - Drain-Source Resistance	120 mOhms
Height	9.6 mm
Typical Turn-On Delay Time	30 ns
Pd - Power Dissipation	520 W
Technology	Si

Documents & Media

RESOURCE TYPE	LINK
Datasheets	IXFx4xN50

In-Stock:

Can ship immediately

QUANTITY

All prices are in USD

Price

QTY	UNIT PRICE	EXT PRICE

Free Tech support >

Regardless of whether you are our customer or have made a purchase from our website, we are committed to providing you with FREE complimentary technical support services

Support

Shipping >

Express