Manufacturer Part Number:

IXFN64N50P

OneIC Part Number:

184-IXFN64N50P

Manufacturer:

IXYS

Description:

MOSFET 500V 64A

Customer Reference:

Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type	Description
Maximum Gate Source Voltage	±30
EU RoHS	Compliant
Maximum Operating Temperature	150
Channel Mode	Enhancement
Standard Package Name	SOT-227
Mounting	Screw
Maximum Power Dissipation	625000
Channel Type	N
Maximum Drain Source Resistance	85@10V
Minimum Operating Temperature	-55
Maximum Drain Source Voltage	500
Number of Elements per Chip	1
Package Width	25.42(Max)
Supplier Package	SOT-227B
Package Length	38.23(Max)
PCB	4
Maximum Continuous Drain Current	50
Pin Count	4
Lead Shape	Screw
FET Feature	Standard
Packaging	Tube
Mounting Type	Chassis Mount
Current - Continuous Drain (Id) @ 25° C	61A
Vgs(th) (Max) @ Id	5.5V @ 8mA
Drain to Source Voltage (Vdss)	500V
Supplier Device Package	SOT-227B
Rds On (Max) @ Id, Vgs	85 mOhm @ 32A, 10V
FET Type	MOSFET N-Channel, Metal Oxide
Power - Max	700W
Standard Package	10
Input Capacitance (Ciss) @ Vds	8700pF @ 25V
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package/Case	SOT-227-4, miniBLOC
rohs	Lead free / RoHS Compliant
Category	Power MOSFET
Configuration	Dual Source, Single
Dimensions	38.23 x 25.42 x 9.6mm
Height	9.6mm
Length	38.23mm
Maximum Continuous Drain Current	61 A
Maximum Drain Source Resistance	0.085 Ω
Maximum Drain Source Voltage	500 V
Maximum Gate Source Voltage	±30 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	700 W
Minimum Operating Temperature	-55 °C
Package Type	SOT-227B
Typical Gate Charge @ Vgs	150 nC V @ 10
Typical Input Capacitance @ Vds	8700 pF V @ 25
Typical Turn-Off Delay Time	85 ns
Typical Turn-On Delay Time	30 ns
Width	25.42mm
Factory Pack Quantity	10
Transistor Polarity	N-Channel
Continuous Drain Current	61 A
Package / Case	SOT-227B
Fall Time	22 ns
Product Category	MOSFET
Unit Weight	1.340411 oz
Forward Transconductance - Min	50 s
RoHS	RoHS Compliant
Gate-Source Breakdown Voltage	+/- 30 V
Series	IXFN64N50
Rds On	85 mOhms
Mounting Style	SMD/SMT
Power Dissipation	700 W
Rise Time	25 ns
Drain-Source Breakdown Voltage	500 V
漏源极电压 (Vdss)	500V
系列	PolarHV™
不同 Vds 时的输入电容 (Ciss)	8700pF @ 25V
不同 Id、Vgs 时的 Rds On（最大值）	85 mOhm @ 32A, 10V
不同 Vgs 时的栅极电荷 (Qg)	150nC @ 10V
FET 功能	Standard
FET 类型	MOSFET N-Channel, Metal Oxide
不同 Id 时的 Vgs(th)（最大值）	5.5V @ 8mA
封装/外壳	SOT-227-4, miniBLOC
功率 - 最大值	700W
安装类型	面板安装
晶体管材料	Si
类别	功率 MOSFET
长度	38.23mm
典型输入电容值@Vds	8700 pF @ 25 V
通道模式	增强
高度	9.6mm
每片芯片元件数目	1
最大漏源电阻值	85 mΩ
最大栅阈值电压	5.5V
最高工作温度	+150 °C
通道类型	N
最低工作温度	-55 °C
最大功率耗散	700W
最大栅源电压	±30 V
宽度	25.42mm
尺寸	38.23 x 25.42 x 9.6mm
最大漏源电压	500 V
典型接通延迟时间	30 ns
典型关断延迟时间	85 ns
封装类型	SOT-227B
最大连续漏极电流	61 A
引脚数目	4
晶体管配置	单
典型栅极电荷@Vgs	150 nC @ 10 V
Vds - Drain-Source Breakdown Voltage	500 V
Vgs - Gate-Source Voltage	30 V
Brand	IXYS
Number of Channels	1 Channel
Tradename	HyperFET
Transistor Type	1 N-Channel
Id - Continuous Drain Current	61 A
Rds On - Drain-Source Resistance	85 mOhms
Pd - Power Dissipation	700 W
Technology	Si

Documents & Media

RESOURCE TYPE	LINK
Datasheets	IXFN64N50P

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