IXYS
Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
| Type | Description |
|---|---|
| Maximum Gate Source Voltage | ±30 |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 150 |
| Channel Mode | Enhancement |
| Standard Package Name | SOT-227 |
| Mounting | Screw |
| Maximum Power Dissipation | 1040000 |
| Channel Type | N |
| Maximum Drain Source Resistance | 75@10V |
| Minimum Operating Temperature | -55 |
| Maximum Drain Source Voltage | 600 |
| Number of Elements per Chip | 1 |
| Package Width | 25.42(Max) |
| Supplier Package | SOT-227B |
| Package Length | 38.23(Max) |
| PCB | 4 |
| Maximum Continuous Drain Current | 72 |
| Pin Count | 4 |
| Lead Shape | Screw |
| FET Feature | Standard |
| Packaging | Tube |
| Mounting Type | Chassis Mount |
| Current - Continuous Drain (Id) @ 25° C | 72A |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Drain to Source Voltage (Vdss) | 600V |
| Supplier Device Package | SOT-227B |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 41A, 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Power - Max | 1040W |
| Standard Package | 10 |
| Input Capacitance (Ciss) @ Vds | 23000pF @ 25V |
| Gate Charge (Qg) @ Vgs | 240nC @ 10V |
| Package/Case | SOT-227-4, miniBLOC |
| rohs | Lead free / RoHS Compliant |
| Category | Power MOSFET |
| Configuration | Dual Source, Single |
| Dimensions | 38.2 x 25.07 x 9.6mm |
| Height | 9.6mm |
| Length | 38.2mm |
| Maximum Continuous Drain Current | 72 A |
| Maximum Drain Source Resistance | 0.075 Ω |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1040 W |
| Minimum Operating Temperature | -55 °C |
| Package Type | SOT-227B |
| Typical Gate Charge @ Vgs | 240 nC V @ 10 |
| Typical Input Capacitance @ Vds | 23000 pF V @ 25 |
| Typical Turn-Off Delay Time | 79 ns |
| Typical Turn-On Delay Time | 28 ns |
| Width | 25.07mm |
| Factory Pack Quantity | 10 |
| Transistor Polarity | N-Channel |
| Continuous Drain Current | 72 A |
| Package / Case | SOT-227B-4 |
| Fall Time | 24 ns |
| Product Category | MOSFET |
| Unit Weight | 1.340411 oz |
| Tradename | Polar, HiPerFET |
| Forward Transconductance - Min | 50 s |
| RoHS | RoHS Compliant |
| Gate-Source Breakdown Voltage | +/- 30 V |
| Series | IXFN82N60 |
| Rds On | 75 mOhms |
| Mounting Style | SMD/SMT |
| Power Dissipation | 1.04 kW |
| Rise Time | 23 ns |
| Drain-Source Breakdown Voltage | 600 V |
| Gate Charge Qg | 240 nC |
| 高度 | 9.6mm |
| 晶体管材料 | Si |
| 类别 | 功率 MOSFET |
| 长度 | 38.2mm |
| 典型输入电容值@Vds | 23000 pF@ 25 V |
| 通道模式 | 增强 |
| 安装类型 | 面板安装 |
| 每片芯片元件数目 | 1 |
| 最大漏源电阻值 | 75 mΩ |
| 通道类型 | N |
| Board Level Components | Y |
| 最高工作温度 | +150 °C |
| 最大栅阈值电压 | 5V |
| 最低工作温度 | -55 °C |
| 最大功率耗散 | 1040000 mW |
| 最大栅源电压 | ±30 V |
| 宽度 | 25.07mm |
| 尺寸 | 38.2 x 25.07 x 9.6mm |
| 最大漏源电压 | 600 V |
| 典型接通延迟时间 | 28 ns |
| 典型关断延迟时间 | 79 ns |
| 封装类型 | SOT-227B |
| 最大连续漏极电流 | 72 A |
| 引脚数目 | 4 |
| 晶体管配置 | 单 |
| 典型栅极电荷@Vgs | 240 nC @ 10 V |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Qg - Gate Charge | 240 nC |
| Type | Polar HiPerFET Power MOSFET |
| Brand | IXYS |
| Number of Channels | 1 Channel |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 72 A |
| Rds On - Drain-Source Resistance | 75 mOhms |
| Pd - Power Dissipation | 1.04 kW |
| Technology | Si |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | IXFN82N60P |
| QTY | UNIT PRICE | EXT PRICE |
|---|
| Company |
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|---|---|
| Delivery | 3-5days |
| Costs | $75+ |
| Company |
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|---|---|
| Delivery | 7-10days |
| Costs | $25+ |
Fedex,
UPS,
DHL
OnTrac,
LaserShip,
USPS,
Zippex,etc