Manufacturer Part Number:

IXTN60N50L2

OneIC Part Number:

184-IXTN60N50L2

Manufacturer:

IXYS

Description:

MOSFET 60 Amps 500V

Customer Reference:

Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type	Description
Maximum Gate Source Voltage	±30
EU RoHS	Compliant
Maximum Operating Temperature	150
Channel Mode	Enhancement
Standard Package Name	SOT-227
Mounting	Screw
Maximum Power Dissipation	735000
Channel Type	N
Maximum Drain Source Resistance	100@10V
Minimum Operating Temperature	-55
Maximum Drain Source Voltage	500
Number of Elements per Chip	1
Package Width	25.42(Max)
Supplier Package	SOT-227B
Package Length	38.23(Max)
PCB	4
Maximum Continuous Drain Current	53
Pin Count	4
Lead Shape	Screw
FET Feature	Standard
Packaging	Tube
Mounting Type	Chassis Mount
Current - Continuous Drain (Id) @ 25° C	53A
Vgs(th) (Max) @ Id	4.5V @ 250µA
Drain to Source Voltage (Vdss)	500V
Supplier Device Package	SOT-227B
Rds On (Max) @ Id, Vgs	100 mOhm @ 30A, 10V
FET Type	MOSFET N-Channel, Metal Oxide
Power - Max	735W
Standard Package	10
Input Capacitance (Ciss) @ Vds	24000pF @ 25V
Gate Charge (Qg) @ Vgs	610nC @ 10V
Package/Case	SOT-227-4, miniBLOC
rohs	Lead free / RoHS Compliant
Factory Pack Quantity	10
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Gate-Source Breakdown Voltage	+/- 30 V
Continuous Drain Current	53 A
Series	IXTN60N50
Package / Case	SOT-227-4
Mounting Style	SMD/SMT
Rds On	100 mOhms
Power Dissipation	735 W
Fall Time	38 ns
Tradename	Linear L2
Forward Transconductance - Min	18 s
Typical Turn-Off Delay Time	165 ns
Rise Time	40 ns
Maximum Operating Temperature	+ 150 C
Drain-Source Breakdown Voltage	500 V
RoHS	RoHS Compliant
Gate Charge Qg	610 nC
漏源极电压 (Vdss)	500V
系列	Linear L2™
不同 Vds 时的输入电容 (Ciss)	24000pF @ 25V
不同 Id、Vgs 时的 Rds On（最大值）	100 mOhm @ 30A, 10V
不同 Vgs 时的栅极电荷 (Qg)	610nC @ 10V
FET 功能	Standard
FET 类型	MOSFET N-Channel, Metal Oxide
不同 Id 时的 Vgs(th)（最大值）	4.5V @ 250µA
封装/外壳	SOT-227-4, miniBLOC
功率 - 最大值	735W
Vds - Drain-Source Breakdown Voltage	500 V
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	4.5 V
Width	25.42 mm
Qg - Gate Charge	610 nC
Type	Linear Power MOSFET
Brand	IXYS
Id - Continuous Drain Current	53 A
Length	38.23 mm
Rds On - Drain-Source Resistance	100 mOhms
Height	12.22 mm
Typical Turn-On Delay Time	40 ns
Pd - Power Dissipation	735 W
Technology	Si

Documents & Media

RESOURCE TYPE	LINK
Datasheets	IXTN60N50L2

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