Manufacturer Part Number:

IXTN90N25L2

OneIC Part Number:

184-IXTN90N25L2

Manufacturer:

IXYS

Description:

MOSFET 90 Amps 250V

Customer Reference:

Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type	Description
Maximum Gate Source Voltage	±20
EU RoHS	Compliant
Maximum Operating Temperature	150
Channel Mode	Enhancement
Standard Package Name	SOT-227
Mounting	Screw
Maximum Power Dissipation	735000
Channel Type	N
Maximum Drain Source Resistance	33@10V
Minimum Operating Temperature	-55
Maximum Drain Source Voltage	250
Number of Elements per Chip	1
Package Width	25.42(Max)
Supplier Package	SOT-227B
Package Length	38.23(Max)
PCB	4
Maximum Continuous Drain Current	90
Pin Count	4
Lead Shape	Screw
FET Feature	Standard
Packaging	Tube
Mounting Type	Chassis Mount
Current - Continuous Drain (Id) @ 25° C	90A
Vgs(th) (Max) @ Id	4.5V @ 3mA
Drain to Source Voltage (Vdss)	250V
Supplier Device Package	SOT-227B
Rds On (Max) @ Id, Vgs	33 mOhm @ 500mA, 10V
FET Type	MOSFET N-Channel, Metal Oxide
Power - Max	735W
Standard Package	10
Input Capacitance (Ciss) @ Vds	23000pF @ 25V
Gate Charge (Qg) @ Vgs	640nC @ 10V
Package/Case	SOT-227-4, miniBLOC
rohs	Lead free / RoHS Compliant
Factory Pack Quantity	10
Transistor Polarity	N-Channel
Gate-Source Breakdown Voltage	+/- 20 V
Continuous Drain Current	90 A
Series	IXTN90N25
Mounting Style	SMD/SMT
Rds On	33 mOhms
Power Dissipation	735 W
Minimum Operating Temperature	- 55 C
Package / Case	SOT-227B
Configuration	Single
Maximum Operating Temperature	+ 150 C
Drain-Source Breakdown Voltage	250 V
RoHS	RoHS Compliant
漏源极电压 (Vdss)	250V
系列	Linear L2™
不同 Vds 时的输入电容 (Ciss)	23000pF @ 25V
不同 Id、Vgs 时的 Rds On（最大值）	33 mOhm @ 500mA, 10V
不同 Vgs 时的栅极电荷 (Qg)	640nC @ 10V
FET 功能	Standard
FET 类型	MOSFET N-Channel, Metal Oxide
不同 Id 时的 Vgs(th)（最大值）	4.5V @ 3mA
封装/外壳	SOT-227-4, miniBLOC
功率 - 最大值	735W
Vds - Drain-Source Breakdown Voltage	250 V
Transistor Type	1 N-Channel
Brand	IXYS
Id - Continuous Drain Current	90 A
Pd - Power Dissipation	735 W
Number of Channels	1 Channel
Technology	Si
Rds On - Drain-Source Resistance	33 mOhms
Vgs - Gate-Source Voltage	20 V

Documents & Media

RESOURCE TYPE	LINK
Datasheets	IXTN90N25L2

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