Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
Type | Description |
---|---|
Mounting | Surface Mount |
Package Width | 1.4(Max) |
PCB | 3 |
Maximum Power Dissipation | 200 |
Maximum Drain Source Voltage | 7 |
Maximum Frequency | 1000 |
EU RoHS | Compliant |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -65 |
Typical Power Gain | 38 |
Supplier Package | SOT-143B |
Maximum Operating Temperature | 150 |
Channel Type | N |
Typical Input Capacitance @ Vds | 2.2@5V@Gate 1|1.6@5V@Gate 2 |
Package Length | 3(Max) |
Pin Count | 4 |
Channel Mode | Enhancement |
Package Height | 1(Max) |
Maximum Continuous Drain Current | 0.03 |
Packaging | Tape and Reel |
Tab | Tab |
Lead Shape | Gull-wing |
Transistor Type | N-Channel Dual Gate |
Voltage - Rated | 7V |
Noise Figure | 1.7dB |
Standard Package | 3,000 |
Supplier Device Package | SOT-143B |
Voltage - Test | 5V |
Frequency | 800MHz |
Gain | 20dB |
Package / Case | TO-253-4, TO-253AA |
Current Rating | 30mA |
rohs | Lead free / RoHS Compliant |
Other Names | 568-6145-6 |
Factory Pack Quantity | 3000 |
Configuration | Dual |
Transistor Polarity | Dual N-Channel |
Gate-Source Breakdown Voltage | 7 V |
Continuous Drain Current | 30 mA |
Maximum Operating Temperature | + 150 C |
Mounting Style | SMD/SMT |
Power Dissipation | 200 mW |
Product Type | N-Channel Dual-Gate MOSFET |
Type | Enhancement |
Drain-Source Breakdown Voltage | 7 V |
RoHS | RoHS Compliant |
噪声系数 | 1.7dB |
晶体管类型 | N-Channel Dual Gate |
电压 - 测试 | 5V |
增益 | 20dB |
额定电流 | 30mA |
封装/外壳 | TO-253-4, TO-253AA |
频率 | 800MHz |
电压 - 额定 | 7V |
RESOURCE TYPE | LINK |
---|---|
Datasheets | BF1105, BF1105R, BF1105WR |
QTY | UNIT PRICE | EXT PRICE |
---|
Company |
|
---|---|
Delivery | 3-5days |
Costs | $75+ |
Company |
|
---|---|
Delivery | 7-10days |
Costs | $25+ |