Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
| Type | Description |
|---|---|
| Mounting | Surface Mount |
| Package Width | 1.4(Max) |
| PCB | 3 |
| Maximum Power Dissipation | 200 |
| Maximum Drain Source Voltage | 7 |
| Maximum Frequency | 1000 |
| EU RoHS | Compliant |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -65 |
| Typical Power Gain | 38 |
| Supplier Package | SOT-143B |
| Maximum Operating Temperature | 150 |
| Channel Type | N |
| Typical Input Capacitance @ Vds | 2.2@5V@Gate 1|1.6@5V@Gate 2 |
| Package Length | 3(Max) |
| Pin Count | 4 |
| Channel Mode | Enhancement |
| Package Height | 1(Max) |
| Maximum Continuous Drain Current | 0.03 |
| Packaging | Tape and Reel |
| Tab | Tab |
| Lead Shape | Gull-wing |
| Transistor Type | N-Channel Dual Gate |
| Voltage - Rated | 7V |
| Noise Figure | 1.7dB |
| Standard Package | 3,000 |
| Supplier Device Package | SOT-143B |
| Voltage - Test | 5V |
| Frequency | 800MHz |
| Gain | 20dB |
| Package / Case | TO-253-4, TO-253AA |
| Current Rating | 30mA |
| rohs | Lead free / RoHS Compliant |
| Other Names | 568-6145-6 |
| Factory Pack Quantity | 3000 |
| Configuration | Dual |
| Transistor Polarity | Dual N-Channel |
| Gate-Source Breakdown Voltage | 7 V |
| Continuous Drain Current | 30 mA |
| Maximum Operating Temperature | + 150 C |
| Mounting Style | SMD/SMT |
| Power Dissipation | 200 mW |
| Product Type | N-Channel Dual-Gate MOSFET |
| Type | Enhancement |
| Drain-Source Breakdown Voltage | 7 V |
| RoHS | RoHS Compliant |
| 噪声系数 | 1.7dB |
| 晶体管类型 | N-Channel Dual Gate |
| 电压 - 测试 | 5V |
| 增益 | 20dB |
| 额定电流 | 30mA |
| 封装/外壳 | TO-253-4, TO-253AA |
| 频率 | 800MHz |
| 电压 - 额定 | 7V |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | BF1105, BF1105R, BF1105WR |
| QTY | UNIT PRICE | EXT PRICE |
|---|
| Company |
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|---|---|
| Delivery | 3-5days |
| Costs | $75+ |
| Company |
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|---|---|
| Delivery | 7-10days |
| Costs | $25+ |