Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
Type | Description |
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Package | 4SOT |
Channel Mode | Enhancement |
Maximum Drain Source Voltage | 10 V |
Maximum Continuous Drain Current | 0.03 A |
Maximum Gate Source Voltage | 6 V |
Operating Temperature | -65 to 150 °C |
Mounting | Surface Mount |
Standard Package | Tape & Reel |
Supplier Package | SOT-143B |
EU RoHS | Compliant |
Maximum Operating Temperature | 150 |
Tab | Tab |
Minimum Operating Temperature | -65 |
Package Height | 1(Max) |
Channel Type | N |
Packaging | Tape and Reel |
Typical Power Gain | 33.5 |
Maximum Drain Source Voltage | 10 |
Number of Elements per Chip | 1 |
Package Width | 1.4(Max) |
Typical Input Capacitance @ Vds | 2.6@5V@Gate 1|1.1@5V@Gate 2 |
PCB | 3 |
Package Length | 3(Max) |
Maximum Power Dissipation | 200 |
Maximum Continuous Drain Current | 0.03 |
Pin Count | 4 |
Lead Shape | Gull-wing |
Transistor Type | N-Channel Dual Gate |
Voltage - Rated | 10V |
Noise Figure | 1dB |
Supplier Device Package | SOT-143B |
Voltage - Test | 5V |
Frequency | 400MHz |
Gain | 29dB |
Package / Case | TO-253-4, TO-253AA |
Current - Test | 15mA |
Current Rating | 30mA |
rohs | Lead free / RoHS Compliant |
Other Names | 568-6151-6 |
Factory Pack Quantity | 3000 |
Transistor Polarity | Dual N-Channel |
Continuous Drain Current | 30 mA |
Mounting Style | SMD/SMT |
Power Dissipation | 200 mW |
Configuration | Dual |
Drain-Source Breakdown Voltage | 10 V |
RoHS | RoHS Compliant |
Vds - Drain-Source Breakdown Voltage | 10 V, 10 V |
Type | RF Small Signal MOSFET |
Brand | NXP Semiconductors |
Vgs - Gate-Source Voltage | 6 V, 6 V |
Pd - Power Dissipation | 200 mW |
Id - Continuous Drain Current | 30 mA, 30 mA |
Technology | Si |
RESOURCE TYPE | LINK |
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Datasheets | BF1201(R,WR) |
QTY | UNIT PRICE | EXT PRICE |
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Company |
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Delivery | 3-5days |
Costs | $75+ |
Company |
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Delivery | 7-10days |
Costs | $25+ |