NXP Semiconductors
Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
| Type | Description |
|---|---|
| Mounting | Surface Mount |
| Package Width | 1.35(Max) |
| PCB | 3 |
| Maximum Power Dissipation | 200 |
| Maximum Drain Source Voltage | 10 |
| EU RoHS | Compliant |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -65 |
| Typical Power Gain | 33.5 |
| Supplier Package | CMPAK |
| Standard Package Name | CMPAK |
| Maximum Operating Temperature | 150 |
| Channel Type | N |
| Typical Input Capacitance @ Vds | 2.6@5V@Gate 1|1.1@5V@Gate 2 |
| Package Length | 2.2(Max) |
| Pin Count | 4 |
| Channel Mode | Enhancement |
| Package Height | 1(Max) |
| Maximum Continuous Drain Current | 0.03 |
| Packaging | Tape and Reel |
| Tab | Tab |
| Lead Shape | Gull-wing |
| Transistor Type | N-Channel Dual Gate |
| Voltage - Rated | 10V |
| Noise Figure | 1dB |
| Standard Package | 3,000 |
| Supplier Device Package | CMPAK-4 |
| Voltage - Test | 5V |
| Frequency | 400MHz |
| Gain | 29dB |
| Package / Case | SC-82A, SOT-343 |
| Current - Test | 15mA |
| Current Rating | 30mA |
| rohs | Lead free / RoHS Compliant |
| Other Names | 568-6150-6 |
| Category | RF MOSFET |
| Configuration | Dual Gate, Single |
| Dimensions | 2.2 x 1.35 x 1mm |
| Height | 1mm |
| Length | 2.2mm |
| Maximum Continuous Drain Current | 0.03 A |
| Maximum Drain Source Voltage | 10 V |
| Maximum Gate Source Voltage | 6 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 0.2 W |
| Minimum Operating Temperature | -65 °C |
| Mounting Type | Surface Mount |
| Package Type | CMPAK |
| Typical Input Capacitance @ Vds | 1.1 pF @ 5 V (Gate 2), 2.6 pF @ 5 V (Gate 1) |
| Typical Power Gain | 33.5 dB |
| Width | 1.35mm |
| Factory Pack Quantity | 3000 |
| Product Category | Transistors RF MOSFET |
| Transistor Polarity | N-Channel |
| Gate-Source Breakdown Voltage | 6 V |
| Continuous Drain Current | 0.03 A |
| Mounting Style | SMD/SMT |
| Power Dissipation | 200 mW |
| Part # Aliases | BF1201WR T/R |
| Product Type | MOSFET Small Signal |
| Drain-Source Breakdown Voltage | 10 V |
| RoHS | RoHS Compliant |
| 电流 - 测试 | 15mA |
| 噪声系数 | 1dB |
| 晶体管类型 | N-Channel Dual Gate |
| 电压 - 测试 | 5V |
| 增益 | 29dB |
| 额定电流 | 30mA |
| 封装/外壳 | SC-82A, SOT-343 |
| 频率 | 400MHz |
| 电压 - 额定 | 10V |
| 最大漏源电压 | 10 V |
| 典型输入电容值@Vds | 1.1 pF @ 5 V（网关 2），2.6 pF @ 5 V（网关 1） |
| Board Level Components | Y |
| 最高工作温度 | +150 °C |
| 通道模式 | 增强 |
| 通道类型 | N |
| 安装类型 | 表面贴装 |
| 最低工作温度 | -65 °C |
| 高度 | 1mm |
| 最大功率耗散 | 0.2 W |
| 最大栅源电压 | 6 V |
| 宽度 | 1.35mm |
| 封装类型 | CMPAK |
| 每片芯片元件数目 | 1 |
| 最大连续漏极电流 | 30 mA |
| 引脚数目 | 4 |
| 类别 | 射频 MOSFET |
| 长度 | 2.2mm |
| 尺寸 | 2.2 x 1.35 x 1mm |
| 典型功率增益 | 33.5 dB |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | BF1201(R,WR) |
| QTY | UNIT PRICE | EXT PRICE |
|---|
| Company |
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|---|---|
| Delivery | 3-5days |
| Costs | $75+ |
| Company |
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|---|---|
| Delivery | 7-10days |
| Costs | $25+ |
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