NXP Semiconductors
Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
| Type | Description |
|---|---|
| Mounting | Surface Mount |
| Package Width | 1.35(Max) |
| PCB | 3 |
| Maximum Power Dissipation | 200 |
| Maximum Drain Source Voltage | 10 |
| EU RoHS | Compliant |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -65 |
| Typical Power Gain | 34.5 |
| Supplier Package | CMPAK |
| Standard Package Name | CMPAK |
| Maximum Operating Temperature | 150 |
| Channel Type | N |
| Typical Input Capacitance @ Vds | 1.7@5V@Gate 1|1@5V@Gate 2 |
| Package Length | 2.2(Max) |
| Pin Count | 4 |
| Channel Mode | Enhancement |
| Package Height | 1(Max) |
| Maximum Continuous Drain Current | 0.03 |
| Packaging | Tape and Reel |
| Tab | Tab |
| Lead Shape | Gull-wing |
| Transistor Type | N-Channel Dual Gate |
| Voltage - Rated | 10V |
| Noise Figure | 0.9dB |
| Standard Package | 1 |
| Supplier Device Package | CMPAK-4 |
| Voltage - Test | 5V |
| Frequency | 400MHz |
| Gain | 30.5dB |
| Package / Case | SC-82A, SOT-343 |
| Current - Test | 12mA |
| Current Rating | 30mA |
| Other Names | 568-6153-1 |
| rohs | Lead free / RoHS Compliant |
| Category | RF MOSFET |
| Configuration | Dual Gate, Single |
| Dimensions | 2.2 x 1.35 x 1mm |
| Height | 1mm |
| Length | 2.2mm |
| Maximum Continuous Drain Current | 0.03 A |
| Maximum Drain Source Voltage | 10 V |
| Maximum Gate Source Voltage | 6 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 0.2 W |
| Minimum Operating Temperature | -65 °C |
| Mounting Type | Surface Mount |
| Package Type | CMPAK |
| Typical Input Capacitance @ Vds | 1 pF @ 5 V (Gate 2), 1.7 pF @ 5 V (Gate 1) |
| Typical Power Gain | 34.5 dB |
| Width | 1.35mm |
| Factory Pack Quantity | 3000 |
| Product Category | Transistors RF MOSFET |
| Transistor Polarity | N-Channel |
| Gate-Source Breakdown Voltage | 6 V |
| Continuous Drain Current | 0.03 A |
| Mounting Style | SMD/SMT |
| Power Dissipation | 200 mW |
| Part # Aliases | BF1202WR T/R |
| Product Type | MOSFET Small Signal |
| Drain-Source Breakdown Voltage | 10 V |
| RoHS | RoHS Compliant |
| Drain Current (Max) | 0.03 A |
| Gate-Source Voltage (Max) | 6 V |
| Operating Temp Range | -65C to 150C |
| Polarity | N |
| Type | RF MOSFET |
| Number of Elements | 1 |
| Operating Temperature Classification | Military |
| Drain-Source On-Volt | 10 V |
| Power Gain | 34.5 dB |
| Rad Hardened | No |
| Screening Level | Military |
| Application | VHF/UHF |
| Output Capacitance (Typ)@Vds | 0.85@5V pF |
| Power Gain (Typ)@Vds | 34.5@5V dB |
| Reverse Capacitance (Typ) | 0.015@5V pF |
| Noise Figure (Max) | 11 dB |
| Drain Source Voltage (Max) | 10 V |
| Power Dissipation (Max) | 200 mW |
| 电流 - 测试 | 12mA |
| 噪声系数 | 0.9dB |
| 晶体管类型 | N-Channel Dual Gate |
| 电压 - 测试 | 5V |
| 增益 | 30.5dB |
| 额定电流 | 30mA |
| 封装/外壳 | SC-82A, SOT-343 |
| 频率 | 400MHz |
| 电压 - 额定 | 10V |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | BF1202,(R,WR) |
| QTY | UNIT PRICE | EXT PRICE |
|---|
| Company |
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|---|---|
| Delivery | 3-5days |
| Costs | $75+ |
| Company |
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|---|---|
| Delivery | 7-10days |
| Costs | $25+ |
Fedex,
UPS,
DHL
OnTrac,
LaserShip,
USPS,
Zippex,etc