Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
| Type | Description |
|---|---|
| Package | 4SOT |
| Channel Mode | Depletion |
| Maximum Drain Source Voltage | 12 V |
| Maximum Continuous Drain Current | 0.04 A |
| Maximum Gate Source Voltage | 8 V |
| Operating Temperature | -65 to 150 °C |
| Mounting | Surface Mount |
| Standard Package | Tape & Reel |
| Supplier Package | SOT-143B |
| Maximum Frequency | 1000 |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 150 |
| Package Width | 1.4(Max) |
| Package Height | 1(Max) |
| Maximum Power Dissipation | 200 |
| Channel Type | N |
| Packaging | Tape and Reel |
| Maximum Drain Source Voltage | 12 |
| Number of Elements per Chip | 1 |
| Tab | Tab |
| Typical Input Capacitance @ Vds | 3.1@8V@Gate 1|1.8@8V@Gate 2 |
| PCB | 3 |
| Package Length | 3(Max) |
| Minimum Operating Temperature | -65 |
| Maximum Continuous Drain Current | 0.04 |
| Pin Count | 4 |
| Lead Shape | Gull-wing |
| Transistor Type | N-Channel Dual Gate |
| Voltage - Rated | 12V |
| Noise Figure | 0.6dB |
| Supplier Device Package | SOT-143B |
| Voltage - Test | 8V |
| Frequency | 200MHz |
| Package / Case | TO-253-4, TO-253AA |
| Current - Test | 15mA |
| Current Rating | 40mA |
| rohs | Lead free / RoHS Compliant |
| Other Names | 568-6176-1 |
| Factory Pack Quantity | 3000 |
| Product Category | Transistors RF MOSFET |
| Transistor Polarity | N-Channel |
| Configuration | Single Dual Gate |
| Gate-Source Breakdown Voltage | 8 V |
| Continuous Drain Current | 0.04 A |
| Mounting Style | SMD/SMT |
| Power Dissipation | 200 mW |
| Minimum Operating Temperature | - 65 C |
| Part # Aliases | BF908 T/R |
| Product Type | RF MOSFET Small Signal |
| Maximum Operating Temperature | + 150 C |
| Drain-Source Breakdown Voltage | 12 V |
| RoHS | RoHS Compliant |
| 电流 - 测试 | 15mA |
| 噪声系数 | 0.6dB |
| 晶体管类型 | N-Channel Dual Gate |
| 电压 - 测试 | 8V |
| 额定电流 | 40mA |
| 封装/外壳 | TO-253-4, TO-253AA |
| 频率 | 200MHz |
| 电压 - 额定 | 12V |
| Type | RF Small Signal MOSFET |
| Vds - Drain-Source Breakdown Voltage | 12 V, 12 V |
| Brand | NXP Semiconductors |
| Pd - Power Dissipation | 200 mW |
| Height | 1 mm |
| Width | 1.4 mm |
| Length | 3 mm |
| Vgs - Gate-Source Voltage | 20 V, 20 V |
| Id - Continuous Drain Current | 40 mA, 40 mA |
| Technology | Si |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | BF908, BF908R |
| QTY | UNIT PRICE | EXT PRICE |
|---|
| Company |
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|---|---|
| Delivery | 3-5days |
| Costs | $75+ |
| Company |
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|---|---|
| Delivery | 7-10days |
| Costs | $25+ |