nxp semiconductors
Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
| Type | Description |
|---|---|
| Package | 3TO-236AB |
| Configuration | Single |
| Maximum Drain Source Voltage | 40 V |
| Maximum Continuous Drain Current | 50 mA |
| Maximum Gate Source Voltage | -40 V |
| Operating Temperature | -65 to 150 °C |
| Mounting | Surface Mount |
| Standard Package | Tape & Reel |
| Supplier Package | TO-236AB |
| Maximum Gate Source Voltage | -40 |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 150 |
| Standard Package Name | SOT-23 |
| Package Height | 1(Max) |
| Maximum Power Dissipation | 250 |
| Maximum Drain Gate Voltage | 40 |
| Channel Type | N |
| Packaging | Tape and Reel |
| Package Width | 1.4(Max) |
| Maximum Continuous Drain Current | 50 |
| PCB | 3 |
| Package Length | 3(Max) |
| Minimum Operating Temperature | -65 |
| Maximum Drain Source Voltage | 40 |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Mounting Type | Surface Mount |
| Current - Drain (Idss) @ Vds (Vgs=0) | 50mA @ 15V |
| Resistance - RDS(On) | 25 Ohm |
| Supplier Device Package | SOT-23-3 |
| Voltage - Cutoff (VGS off) @ Id | 4V @ 0.5nA |
| Current Drain (Id) - Max | 20mA |
| FET Type | N-Channel |
| Power - Max | 250mW |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Drain to Source Voltage (Vdss) | 40V |
| rohs | Lead free / RoHS Compliant |
| Other Names | 568-8488-1 |
| Dimensions | 3 x 1.4 x 1mm |
| Height | 1mm |
| Length | 3mm |
| Maximum Drain Gate Voltage | 40V |
| Maximum Drain Source Resistance | |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Package Type | TO-236AB |
| Width | 1.4mm |
| Factory Pack Quantity | 3000 |
| Drain Source Voltage VDS | 40 V |
| Product Category | JFET |
| Transistor Polarity | N-Channel |
| Gate-Source Breakdown Voltage | 40 V |
| Gate-Source Cutoff Voltage | 4 V to 10 V |
| Mounting Style | SMD/SMT |
| Rds On | 25 Ohms |
| Power Dissipation | 250 mW |
| Drain-Source Current at Vgs=0 | 50 mA |
| Part # Aliases | BSR56 T/R |
| RoHS | RoHS Compliant |
| Continuous Drain Current | 0.05 A |
| Gate-Source Voltage (Max) | -40 V |
| Operating Temperature (Max) | 150C |
| Operating Temperature (Min) | -65C |
| Operating Temperature Classification | Military |
| Drain-Gate Voltage (Max) | 40 V |
| Drain-Source Volt (Max) | 40 V |
| Rad Hardened | No |
| 漏源极电压 (Vdss) | 40V |
| FET 类型 | N-Channel |
| 电压 - 击穿 (V(BR)GSS) | 40V |
| 漏极电流 (Id) - 最大值 | 20mA |
| 不同 Id 时的电压 - 截止（VGS 关） | 4V @ 0.5nA |
| 封装/外壳 | TO-236-3, SC-59, SOT-23-3 |
| 电阻 - RDS（开） | 25 Ohm |
| 功率 - 最大值 | 250mW |
| 不同 Vds (Vgs=0) 时的电流 - 漏极 (Idss) | 50mA @ 15V |
| 最大漏源电压 | 40 V |
| 长度 | 3mm |
| 配置 | 单 |
| Board Level Components | Y |
| 最高工作温度 | +150 °C |
| 高度 | 1mm |
| 通道类型 | N |
| 安装类型 | 表面贴装 |
| 最低工作温度 | -65 °C |
| Idss 漏-源切断电流 | 50 → 150mA |
| 最大栅源电压 | -40 V |
| 宽度 | 1.4mm |
| 封装类型 | TO-236AB |
| 引脚数目 | 3 |
| 最大漏源电阻值 | 25 Ω |
| 尺寸 | 3 x 1.4 x 1mm |
| 最大漏门电压 | 40V |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vgs - Gate-Source Breakdown Voltage | - 40 V |
| Technology | Si |
| Brand | NXP Semiconductors |
| Rds On - Drain-Source Resistance | 25 Ohms |
| Pd - Power Dissipation | 250 W |
| Id - Continuous Drain Current | 50 mA |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | BSR56(57,58) |
| QTY | UNIT PRICE | EXT PRICE |
|---|
| Company |
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|---|---|
| Delivery | 3-5days |
| Costs | $75+ |
| Company |
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|---|---|
| Delivery | 7-10days |
| Costs | $25+ |
Fedex,
UPS,
DHL
OnTrac,
LaserShip,
USPS,
Zippex,etc