Manufacturer Part Number:

PBR941,215

OneIC Part Number:

229-PBR941-215

Manufacturer:

nxp semiconductors

Description:

Trans GP BJT NPN 10V 0.05A 3-Pin TO-236AB T/R

Customer Reference:

Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type	Description
Package	3TO-236AB
Type	NPN
Pin Count	3
Maximum Collector Emitter Voltage	10 V
Maximum DC Collector Current	0.05 A
Minimum DC Current Gain	50@5mA@6V
Maximum Operating Frequency	8000(Typ) MHz
Maximum Collector Base Voltage	20 V
Operating Temperature	-65 to 175 °C
Maximum Power Dissipation	360 mW
Mounting	Surface Mount
Standard Package	Tape & Reel
Maximum DC Collector Current	0.05
Minimum Operating Temperature	-65
Maximum Transition Frequency	8000(Typ)
Package Width	1.4(Max)
PCB	3
Maximum Power Dissipation	360
EU RoHS	Compliant
Number of Elements per Chip	1
Maximum Collector Base Voltage	20
Maximum Collector Emitter Voltage	10
Supplier Package	TO-236AB
Standard Package Name	SOT-23
Maximum Operating Temperature	175
Package Length	3(Max)
Package Height	1(Max)
Maximum Emitter Base Voltage	1.5
Packaging	Tape and Reel
Lead Shape	Gull-wing
Current - Collector (Ic) (Max)	50mA
Noise Figure (dB Typ @ f)	1.4dB ~ 2dB @ 1GHz ~ 2GHz
Transistor Type	NPN
Mounting Type	Surface Mount
Frequency - Transition	8GHz
Voltage - Collector Emitter Breakdown (Max)	10V
Supplier Device Package	SOT-23-3
Power - Max	360mW
Package / Case	TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 5mA, 6V
rohs	Lead free / RoHS Compliant
Other Names	568-1174-1
Category	Bipolar RF
Configuration	Single
Dimensions	1 x 3 x 1.4mm
Height	1mm
Length	3mm
Maximum Emitter Base Voltage	1.5 V
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-65 °C
Package Type	TO-236AB
Width	1.4mm
Factory Pack Quantity	3000
Gain Bandwidth Product fT	8 GHz
Product Category	Transistors Bipolar - BJT
Transistor Polarity	NPN
Emitter- Base Voltage VEBO	1.5 V
DC Collector/Base Gain hfe Min	50 at 5 mA at 6 V
DC Current Gain hFE Max	50 at 5 mA at 6 V
Collector- Emitter Voltage VCEO Max	10 V
Mounting Style	SMD/SMT
Collector- Base Voltage VCBO	20 V
Part # Aliases	PBR941 T/R
RoHS	RoHS Compliant
Continuous Collector Current	0.05 A
Collector Current (DC) (Max)	0.05 A
Collector-Base Voltage	20 V
Collector-Emitter Voltage	10 V
Emitter-Base Voltage	1.5 V
Frequency (Max)	8000 MHz
Power Dissipation	0.36 W
Operating Temp Range	-65C to 175C
Number of Elements	1
DC Current Gain (Min)	50
Operating Temperature Classification	Military
Rad Hardened	No
Frequency	8000 MHz
DC Current Gain	50
Collector Current (DC)	0.05 A
频率 - 跃迁	8GHz
晶体管类型	NPN
不同 Ic、Vce 时的 DC 电流增益 (hFE)（最小值）	50 @ 5mA, 6V
封装/外壳	TO-236-3, SC-59, SOT-23-3
功率 - 最大值	360mW
噪声系数（dB，不同 f 时的典型值）	1.4dB ~ 2dB @ 1GHz ~ 2GHz
电流 - 集电极 (Ic)（最大值）	50mA
电压 - 集射极击穿（最大值）	10V
Brand	NXP Semiconductors
Pd - Power Dissipation	360 mW

Documents & Media

RESOURCE TYPE	LINK
Datasheets	PBR941

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