Manufacturer Part Number:

APL1001J

OneIC Part Number:

253-APL1001J

Manufacturer:

microsemi

Description:

Trans MOSFET N-CH 1KV 18A 4-Pin SOT-227

Customer Reference:

Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type	Description
Package	4SOT-227
Channel Mode	Enhancement
Maximum Drain Source Voltage	1000 V
Maximum Continuous Drain Current	18 A
RDS-on	600@10V mOhm
Maximum Gate Source Voltage	±30 V
Typical Turn-On Delay Time	14 ns
Typical Turn-Off Delay Time	60 ns
Operating Temperature	-55 to 150 °C
Mounting	Screw
Standard Package	Rail / Tube
Maximum Gate Source Voltage	±30
EU RoHS	Compliant
Maximum Operating Temperature	150
Standard Package Name	SOT-227
Package Height	12.24(Max)
Maximum Power Dissipation	520000
Channel Type	N
Maximum Drain Source Resistance	600@10V
Minimum Operating Temperature	-55
Maximum Drain Source Voltage	1000
Number of Elements per Chip	1
Package Width	25.04(Max)
Supplier Package	SOT-227
Package Length	38.2(Max)
PCB	4
Maximum Continuous Drain Current	18
Pin Count	4
FET Feature	Standard
Packaging	Tube
Mounting Type	Chassis Mount
Current - Continuous Drain (Id) @ 25° C	18A
Vgs(th) (Max) @ Id	4V @ 2.5mA
Supplier Device Package	ISOTOP®
Rds On (Max) @ Id, Vgs	600 mOhm @ 500mA, 10V
FET Type	MOSFET N-Channel, Metal Oxide
Power - Max	520W
Drain to Source Voltage (Vdss)	1000V (1kV)
Input Capacitance (Ciss) @ Vds	7200pF @ 25V
Package/Case	SOT-227-4, miniBLOC
rohs	Lead free / RoHS Compliant
Drain Current (Max)	18 A
Frequency (Max)	Not Required MHz
Gate-Source Voltage (Max)	�30 V
Output Power (Max)	Not Required W
Power Dissipation	520 W
Noise Figure	Not Required dB
Drain-Source On-Res	0.6 ohm
Operating Temp Range	-55C to 150C
Package Type	SOT-227
Polarity	N
Type	Power MOSFET
Number of Elements	1
Operating Temperature Classification	Military
Drain Efficiency	Not Required %
Drain-Source On-Volt	1000 V
Power Gain	Not Required dB
Rad Hardened	No
Continuous Drain Current	18 A
Factory Pack Quantity	5
Vds - Drain-Source Breakdown Voltage	1 kV
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	2 V
Package / Case	SOT-227-4
Fall Time	14 ns
Product	Power MOSFET Modules
Brand	Microsemi
Number of Channels	1 Channel
Tradename	POWER MOS IV, ISOTOP
Configuration	Single
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	18 A
Length	38.2 mm
Rds On - Drain-Source Resistance	600 mOhms
RoHS	RoHS Compliant
Height	9.6 mm
Mounting Style	Screw
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	520 W
Rise Time	14 ns

Documents & Media

RESOURCE TYPE	LINK
Datasheets	Power Products Catalog
Datasheets	APL1001J

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