Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
Type | Description |
---|---|
Package | 4SOT-227 |
Channel Mode | Enhancement |
Maximum Drain Source Voltage | 600 V |
Maximum Continuous Drain Current | 31 A |
RDS-on | 150@10V mOhm |
Maximum Gate Source Voltage | ±30 V |
Typical Turn-On Delay Time | 48 ns |
Typical Rise Time | 55 ns |
Typical Turn-Off Delay Time | 145 ns |
Typical Fall Time | 44 ns |
Operating Temperature | -55 to 150 °C |
Mounting | Screw |
Standard Package | Rail / Tube |
FET Feature | Standard |
Packaging | Tube |
Mounting Type | Chassis Mount |
Current - Continuous Drain (Id) @ 25° C | 31A |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Drain to Source Voltage (Vdss) | 600V |
Supplier Device Package | ISOTOP® |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 21A, 10V |
FET Type | MOSFET N-Channel, Metal Oxide |
Power - Max | 355W |
Input Capacitance (Ciss) @ Vds | 5890pF @ 25V |
Gate Charge (Qg) @ Vgs | 215nC @ 10V |
Package/Case | SOT-227-4, miniBLOC |
rohs | Lead free / RoHS Compliant |
Factory Pack Quantity | 20 |
Vds - Drain-Source Breakdown Voltage | 600 V |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 215 nC |
Package / Case | SOT-227-4 |
Fall Time | 44 ns |
Brand | Microsemi |
Number of Channels | 1 Channel |
Configuration | 1 N-Channel |
Maximum Operating Temperature | + 150 C |
Transistor Type | 1 N-Channel |
Forward Transconductance - Min | 42 S |
Id - Continuous Drain Current | 31 A |
Rds On - Drain-Source Resistance | 120 mOhms |
RoHS | RoHS Compliant |
Mounting Style | Screw Mount |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 355 W |
Rise Time | 55 ns |
Technology | Si |
RESOURCE TYPE | LINK |
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Datasheets | Power Products Catalog |
Datasheets | APT30M60J |
QTY | UNIT PRICE | EXT PRICE |
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Company |
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Delivery | 3-5days |
Costs | $75+ |
Company |
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Delivery | 7-10days |
Costs | $25+ |