Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
Type | Description |
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Package | 4SOT-227 |
Configuration | Single Dual Emitter |
Maximum Collector Emitter Voltage | 600 V |
Maximum Continuous Collector Current | 86 A |
Maximum Gate Emitter Voltage | ±20 V |
Mounting | Screw |
Standard Package | Rail / Tube |
Gate-Emitter Leakage Current | +/- 100 nA |
Collector-Emitter Saturation Voltage | 2.2 V |
Brand | Microsemi |
Pd - Power Dissipation | 284 W |
Continuous Collector Current at 25 C | 86 A |
Collector- Emitter Voltage VCEO Max | 600 V |
Product | IGBT Silicon Modules |
Mounting Style | SMD/SMT |
Minimum Operating Temperature | - 55 C |
Package / Case | ISOTOP-4 |
Maximum Operating Temperature | + 150 C |
RoHS | RoHS Compliant |
RESOURCE TYPE | LINK |
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QTY | UNIT PRICE | EXT PRICE |
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Company |
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Delivery | 3-5days |
Costs | $75+ |
Company |
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Delivery | 7-10days |
Costs | $25+ |