Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
Type | Description |
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Package | 4SOT-227 |
Configuration | Single |
Maximum Collector Emitter Voltage | 900 V |
Maximum Continuous Collector Current | 64 A |
Maximum Gate Emitter Voltage | ±30 V |
Mounting | Screw |
Standard Package | Rail / Tube |
Supplier Package | SOT-227 |
Maximum Gate Emitter Voltage | ±30 |
Maximum Continuous Collector Current | 64 |
EU RoHS | Compliant |
Maximum Operating Temperature | 150 |
Standard Package Name | SOT-227 |
Channel Type | N |
Maximum Collector Emitter Voltage | 900 |
Maximum Power Dissipation | 284000 |
Minimum Operating Temperature | -55 |
Pin Count | 4 |
Collector Current (DC) (Max) | 64 A |
Collector-Emitter Voltage | 900 V |
Package Type | SOT-227 |
Operating Temperature (Max) | 150C |
Operating Temperature (Min) | -55C |
Operating Temperature Classification | Military |
Gate to Emitter Voltage (Max) | �30 V |
Rad Hardened | No |
Collector Current (DC) | 64 A |
Gate-Emitter Leakage Current | +/- 100 nA |
Collector-Emitter Saturation Voltage | 3.2 V |
Brand | Microsemi |
Pd - Power Dissipation | 284 W |
Continuous Collector Current at 25 C | 64 A |
Collector- Emitter Voltage VCEO Max | 900 V |
Product | IGBT Silicon Carbide Modules |
Mounting Style | SMD/SMT |
Minimum Operating Temperature | - 55 C |
Package / Case | ISOTOP-4 |
Maximum Operating Temperature | + 150 C |
RoHS | RoHS Compliant |
RESOURCE TYPE | LINK |
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QTY | UNIT PRICE | EXT PRICE |
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Company |
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Delivery | 3-5days |
Costs | $75+ |
Company |
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Delivery | 7-10days |
Costs | $25+ |