Manufacturer Part Number:

APT60GA60JD60

OneIC Part Number:

253-APT60GA60JD60

Manufacturer:

microsemi

Description:

Trans IGBT Chip N-CH 600V 112A 4-Pin SOT-227

Customer Reference:

Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type	Description
Package	4SOT-227
Configuration	Single Dual Emitter
Maximum Collector Emitter Voltage	600 V
Maximum Continuous Collector Current	112 A
Maximum Gate Emitter Voltage	±30 V
Mounting	Screw
Standard Package	Rail / Tube
Input Capacitance (Cies) @ Vce	8.01nF @ 25V
Current - Collector (Ic) (Max)	112A
IGBT Type	PT
Mounting Type	Chassis Mount
Current - Collector Cutoff (Max)	275µA
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 62A
Voltage - Collector Emitter Breakdown (Max)	600V
Supplier Device Package	ISOTOP®
Power - Max	356W
Package / Case	SOT-227-4, miniBLOC
Input	Standard
NTC Thermistor	No
rohs	Lead free / RoHS Compliant
Factory Pack Quantity	1
Gate-Emitter Leakage Current	100 nA
Continuous Collector Current at 25 C	112 A
Product	IGBT Silicon Modules
Minimum Operating Temperature	- 55 C
Operating Temperature Range	- 55 C to + 150 C
Brand	Microsemi
Pd - Power Dissipation	356 W
Collector-Emitter Saturation Voltage	2 V
Collector- Emitter Voltage VCEO Max	600 V
Height	9.6 mm
Mounting Style	Screw
Width	25.4 mm
Length	38.2 mm
Tradename	POWER MOS 8, ISOTOP
Maximum Operating Temperature	+ 150 C
RoHS	RoHS Compliant

Documents & Media

RESOURCE TYPE	LINK
Datasheets	APT60GA60JD60

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