Manufacturer Part Number:

STE250NS10

OneIC Part Number:

390-STE250NS10

Manufacturer:

stmicroelectronics

Description:

Trans MOSFET N-CH 100V 220A 4-Pin ISOTOP Tube

Customer Reference:

Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type	Description
Package	4ISOTOP
Channel Mode	Enhancement
Maximum Drain Source Voltage	100 V
Maximum Continuous Drain Current	220 A
RDS-on	5.5@10V mOhm
Maximum Gate Source Voltage	±20 V
Typical Turn-On Delay Time	110 ns
Typical Rise Time	380 ns
Typical Turn-Off Delay Time	1100 ns
Typical Fall Time	300 ns
Operating Temperature	-55 to 150 °C
Mounting	Screw
Standard Package	Rail / Tube
Maximum Gate Source Voltage	±20
EU RoHS	Compliant
Maximum Operating Temperature	150
Standard Package Name	ISOTOP
Package Height	9.1(Max)
Maximum Power Dissipation	500000
Channel Type	N
Packaging	Tube
Maximum Drain Source Resistance	5.5@10V
Minimum Operating Temperature	-55
Maximum Drain Source Voltage	100
Number of Elements per Chip	1
Package Width	25.5(Max)
Supplier Package	ISOTOP
Package Length	38.2(Max)
PCB	4
Maximum Continuous Drain Current	220
Pin Count	4
P(tot)	500W
Matchcode	STE250NS10
R(thJC)	0.25K/W
LogicLevel	NO
Unit Pack	10
Standard Leadtime	14 weeks
MOQ	10
Q(g)	900nC
Leadfree Defin.	RoHS-conform
Automotive	NO
I(D)	220A
V(DS)	100V
Technology	STripFET
RDS(on)at10V	0.0045Ohm
FET Feature	Standard
Mounting Type	Chassis Mount
Current - Continuous Drain (Id) @ 25° C	220A
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	100V
Supplier Device Package	ISOTOP®
Rds On (Max) @ Id, Vgs	5.5 mOhm @ 125A, 10V
FET Type	MOSFET N-Channel, Metal Oxide
Power - Max	500W
Input Capacitance (Ciss) @ Vds	31000pF @ 25V
Other Names	497-3167-5
Gate Charge (Qg) @ Vgs	900nC @ 10V
Package/Case	ISOTOP
rohs	Lead free / RoHS Compliant
Category	Power MOSFET
Configuration	Dual Source, Single
Dimensions	38.2 x 25.5 x 9.1mm
Height	9.1mm
Length	38.2mm
Maximum Drain Source Resistance	0.006 Ω
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	500 W
Minimum Operating Temperature	-55 °C
Package Type	ISOTOP
Typical Gate Charge @ Vgs	900 nC V @ 10
Typical Input Capacitance @ Vds	31 pF V @ 25
Width	25.5mm
Drain Current (Max)	220 A
Frequency (Max)	Not Required MHz
Gate-Source Voltage (Max)	�20 V
Output Power (Max)	Not Required W
Power Dissipation	500 W
Noise Figure	Not Required dB
Drain-Source On-Res	0.0055 ohm
Operating Temp Range	-55C to 150C
Polarity	N
Type	Power MOSFET
Number of Elements	1
Operating Temperature Classification	Military
Drain Efficiency	Not Required %
Drain-Source On-Volt	100 V
Power Gain	Not Required dB
Rad Hardened	No
Continuous Drain Current	220 A
Transistor Polarity	:N Channel
Continuous Drain Current Id	:125A
Drain Source Voltage Vds	:100V
On Resistance Rds(on)	:4.5mohm
Rds(on) Test Voltage Vgs	:10V
Threshold Voltage Vgs	:3V
Power Dissipation Pd	:500W
Operating Temperature Min	:-55°C
Operating Temperature Max	:150°C
Transistor Case Style	:ISOTOP
No. of Pins	:4
MSL	:-
SVHC	:No SVHC (20-Jun-2013)
Current Id Max	:220A
Operating Temperature Range	:-55°C to +150°C
Termination Type	:Screw
Transistor Type	:Power MOSFET
Voltage Vds Typ	:100V
Voltage Vgs Max	:20V
Voltage Vgs Rds on Measurement	:10V
Weight (kg)	0.0002
Tariff No.	85423300
Case	ISOTOP
Transistor type	N-MOSFET
Power	500W
Drain-source voltage	100V
Polarisation	unipolar
Drain current	220A
Multiplicity	1
Gross weight	0.05 kg
Collective package [pcs]	10
spg	10

Documents & Media

RESOURCE TYPE	LINK
Datasheets	STE250NS10

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