Image shown is a representation only. Exact specifications should be obtained from the product datasheet.
Type | Description |
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Package | 4ISOTOP |
Channel Mode | Enhancement |
Maximum Drain Source Voltage | 600 V |
Maximum Continuous Drain Current | 40 A |
RDS-on | 130@10V mOhm |
Maximum Gate Source Voltage | ±30 V |
Typical Turn-On Delay Time | 49 ns |
Typical Rise Time | 42 ns |
Typical Fall Time | 26 ns |
Operating Temperature | -65 to 150 °C |
Mounting | Screw |
Standard Package | Rail / Tube |
Maximum Gate Source Voltage | ±30 |
EU RoHS | Compliant |
Maximum Operating Temperature | 150 |
Standard Package Name | ISOTOP |
Minimum Operating Temperature | -65 |
Channel Type | N |
Packaging | Tube |
Maximum Drain Source Resistance | 130@10V |
Maximum Drain Source Voltage | 600 |
Number of Elements per Chip | 1 |
Supplier Package | ISOTOP |
Maximum Power Dissipation | 460000 |
Maximum Continuous Drain Current | 40 |
Pin Count | 4 |
P(tot) | 460W |
Matchcode | STE40NC60 |
R(thJC) | 0.272K/W |
LogicLevel | NO |
Unit Pack | 10 |
Standard Leadtime | 14 weeks |
MOQ | 100 |
Q(g) | 430nC |
Leadfree Defin. | RoHS-conform |
Automotive | NO |
I(D) | 40A |
V(DS) | 600V |
Technology | PowerMESH |
RDS(on)at10V | 0.13Ohm |
FET Feature | Standard |
Mounting Type | Chassis Mount |
Current - Continuous Drain (Id) @ 25° C | 40A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Drain to Source Voltage (Vdss) | 600V |
Supplier Device Package | ISOTOP® |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 20A, 10V |
FET Type | MOSFET N-Channel, Metal Oxide |
Power - Max | 460W |
Input Capacitance (Ciss) @ Vds | 11100pF @ 25V |
Other Names | 497-3169-5 |
Gate Charge (Qg) @ Vgs | 430nC @ 10V |
Package/Case | ISOTOP |
rohs | Lead free / RoHS Compliant |
Category | Power MOSFET |
Configuration | Dual Source, Single |
Dimensions | 38.2 x 25.5 x 9.1mm |
Height | 9.1mm |
Length | 38.2mm |
Maximum Drain Source Resistance | 0.13 Ω |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 460 W |
Minimum Operating Temperature | -65 °C |
Package Type | ISOTOP |
Typical Gate Charge @ Vgs | 307.5 nC V @ 10 |
Typical Input Capacitance @ Vds | 11.1 pF V @ 25 |
Width | 25.5mm |
Factory Pack Quantity | 10 |
Product Category | MOSFET |
Transistor Polarity | N-Channel |
Gate-Source Breakdown Voltage | +/- 30 V |
Continuous Drain Current | 40 A |
Forward Transconductance - Min | 42 S |
Unit Weight | 1 oz |
Rds On | 130 mOhms |
Power Dissipation | 460 W |
Mounting Style | Through Hole |
Package / Case | ISOTOP |
Rise Time | 42 ns |
Drain-Source Breakdown Voltage | 600 V |
RoHS | RoHS Compliant |
Fall Time | 26 ns |
Drain Current (Max) | 40 A |
Frequency (Max) | Not Required MHz |
Gate-Source Voltage (Max) | �30 V |
Output Power (Max) | Not Required W |
Noise Figure | Not Required dB |
Drain-Source On-Res | 0.13 ohm |
Operating Temp Range | -65C to 150C |
Polarity | N |
Type | Power MOSFET |
Number of Elements | 1 |
Operating Temperature Classification | Military |
Drain Efficiency | Not Required % |
Drain-Source On-Volt | 600 V |
Power Gain | Not Required dB |
Rad Hardened | No |
RESOURCE TYPE | LINK |
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Datasheets | STE40NC60 |
QTY | UNIT PRICE | EXT PRICE |
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Company |
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Delivery | 3-5days |
Costs | $75+ |
Company |
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Delivery | 7-10days |
Costs | $25+ |