Manufacturer Part Number:

STE40NC60

OneIC Part Number:
390-STE40NC60
Manufacturer:

stmicroelectronics

microsemi
Description:
Trans MOSFET N-CH 600V 40A 4-Pin ISOTOP Tube
Customer Reference:
Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type Description
Package 4ISOTOP
Channel Mode Enhancement
Maximum Drain Source Voltage 600 V
Maximum Continuous Drain Current 40 A
RDS-on 130@10V mOhm
Maximum Gate Source Voltage ±30 V
Typical Turn-On Delay Time 49 ns
Typical Rise Time 42 ns
Typical Fall Time 26 ns
Operating Temperature -65 to 150 °C
Mounting Screw
Standard Package Rail / Tube
Maximum Gate Source Voltage ±30
EU RoHS Compliant
Maximum Operating Temperature 150
Standard Package Name ISOTOP
Minimum Operating Temperature -65
Channel Type N
Packaging Tube
Maximum Drain Source Resistance 130@10V
Maximum Drain Source Voltage 600
Number of Elements per Chip 1
Supplier Package ISOTOP
Maximum Power Dissipation 460000
Maximum Continuous Drain Current 40
Pin Count 4
P(tot) 460W
Matchcode STE40NC60
R(thJC) 0.272K/W
LogicLevel NO
Unit Pack 10
Standard Leadtime 14 weeks
MOQ 100
Q(g) 430nC
Leadfree Defin. RoHS-conform
Automotive NO
I(D) 40A
V(DS) 600V
Technology PowerMESH
RDS(on)at10V 0.13Ohm
FET Feature Standard
Mounting Type Chassis Mount
Current - Continuous Drain (Id) @ 25° C 40A
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 600V
Supplier Device Package ISOTOP®
Rds On (Max) @ Id, Vgs 130 mOhm @ 20A, 10V
FET Type MOSFET N-Channel, Metal Oxide
Power - Max 460W
Input Capacitance (Ciss) @ Vds 11100pF @ 25V
Other Names 497-3169-5
Gate Charge (Qg) @ Vgs 430nC @ 10V
Package/Case ISOTOP
rohs Lead free / RoHS Compliant
Category Power MOSFET
Configuration Dual Source, Single
Dimensions 38.2 x 25.5 x 9.1mm
Height 9.1mm
Length 38.2mm
Maximum Drain Source Resistance 0.13 Ω
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 460 W
Minimum Operating Temperature -65 °C
Package Type ISOTOP
Typical Gate Charge @ Vgs 307.5 nC V @ 10
Typical Input Capacitance @ Vds 11.1 pF V @ 25
Width 25.5mm
Factory Pack Quantity 10
Product Category MOSFET
Transistor Polarity N-Channel
Gate-Source Breakdown Voltage +/- 30 V
Continuous Drain Current 40 A
Forward Transconductance - Min 42 S
Unit Weight 1 oz
Rds On 130 mOhms
Power Dissipation 460 W
Mounting Style Through Hole
Package / Case ISOTOP
Rise Time 42 ns
Drain-Source Breakdown Voltage 600 V
RoHS RoHS Compliant
Fall Time 26 ns
Drain Current (Max) 40 A
Frequency (Max) Not Required MHz
Gate-Source Voltage (Max) �30 V
Output Power (Max) Not Required W
Noise Figure Not Required dB
Drain-Source On-Res 0.13 ohm
Operating Temp Range -65C to 150C
Polarity N
Type Power MOSFET
Number of Elements 1
Operating Temperature Classification Military
Drain Efficiency Not Required %
Drain-Source On-Volt 600 V
Power Gain Not Required dB
Rad Hardened No

Documents & Media

RESOURCE TYPE LINK
Datasheets STE40NC60
In-Stock:
Can ship immediately
QUANTITY
All prices are in USD
Price
QTY UNIT PRICE EXT PRICE
Free Tech support >
Regardless of whether you are our customer or have made a purchase from our website, we are committed to providing you with FREE complimentary technical support services
Support
Shipping >
Express
Company

Fedex, UPS, DHL

Delivery 3-5days
Costs $75+
Standard
Company

Fedex, DHL eCommence,

OnTrac, LaserShip,

USPS, Zippex,etc

Delivery 7-10days
Costs $25+