Manufacturer Part Number:

STE53NC50

OneIC Part Number:

390-STE53NC50

Manufacturer:

stmicroelectronics

Description:

Trans MOSFET N-CH 500V 53A 4-Pin ISOTOP Tube

Customer Reference:

Datasheet:

Image shown is a representation only. Exact specifications should be obtained from the product datasheet.

Product Attributes

Type	Description
Package	4ISOTOP
Channel Mode	Enhancement
Maximum Drain Source Voltage	500 V
Maximum Continuous Drain Current	53 A
RDS-on	80@10V mOhm
Maximum Gate Source Voltage	±30 V
Typical Turn-On Delay Time	46 ns
Typical Rise Time	70 ns
Typical Fall Time	38 ns
Operating Temperature	-65 to 150 °C
Mounting	Screw
Standard Package	Rail / Tube
Maximum Gate Source Voltage	±30
EU RoHS	Compliant
Maximum Operating Temperature	150
Standard Package Name	ISOTOP
Minimum Operating Temperature	-65
Channel Type	N
Packaging	Tube
Maximum Drain Source Resistance	80@10V
Maximum Drain Source Voltage	500
Number of Elements per Chip	1
Supplier Package	ISOTOP
Maximum Power Dissipation	460000
Maximum Continuous Drain Current	53
Pin Count	4
P(tot)	460W
Matchcode	STE53NC50
R(thJC)	0.272K/W
LogicLevel	NO
Unit Pack	10
Standard Leadtime	14 weeks
MOQ	1
Q(g)	434nC
Leadfree Defin.	RoHS-conform
Automotive	NO
I(D)	53A
V(DS)	500V
Technology	PowerMESH
RDS(on)at10V	0.08Ohm
FET Feature	Standard
Mounting Type	Chassis Mount
Current - Continuous Drain (Id) @ 25° C	53A
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	500V
Supplier Device Package	ISOTOP®
Rds On (Max) @ Id, Vgs	80 mOhm @ 27A, 10V
FET Type	MOSFET N-Channel, Metal Oxide
Power - Max	460W
Input Capacitance (Ciss) @ Vds	11200pF @ 25V
Other Names	497-2776-5
Gate Charge (Qg) @ Vgs	434nC @ 10V
Package/Case	ISOTOP
rohs	Lead free / RoHS Compliant
Category	Power MOSFET
Configuration	Dual Source, Single
Dimensions	38.2 x 25.5 x 9.1mm
Height	9.1mm
Length	38.2mm
Maximum Drain Source Resistance	0.08 Ω
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	460 W
Minimum Operating Temperature	-65 °C
Package Type	ISOTOP
Typical Gate Charge @ Vgs	310 nC V @ 10
Typical Input Capacitance @ Vds	11.2 pF V @ 25
Width	25.5mm
Factory Pack Quantity	10
Product Category	MOSFET
Transistor Polarity	N-Channel
Gate-Source Breakdown Voltage	+/- 30 V
Continuous Drain Current	53 A
Forward Transconductance - Min	42 S
Unit Weight	1 oz
Rds On	80 mOhms
Power Dissipation	460 W
Mounting Style	Through Hole
Package / Case	ISOTOP
Rise Time	70 ns
Drain-Source Breakdown Voltage	500 V
RoHS	RoHS Compliant
Fall Time	38 ns
Drain Current (Max)	53 A
Frequency (Max)	Not Required MHz
Gate-Source Voltage (Max)	�30 V
Output Power (Max)	Not Required W
Noise Figure	Not Required dB
Drain-Source On-Res	0.08 ohm
Operating Temp Range	-65C to 150C
Polarity	N
Type	Power MOSFET
Number of Elements	1
Operating Temperature Classification	Military
Drain Efficiency	Not Required %
Drain-Source On-Volt	500 V
Power Gain	Not Required dB
Rad Hardened	No
Continuous Drain Current Id	:53A
Drain Source Voltage Vds	:500V
On Resistance Rds(on)	:80mohm
Rds(on) Test Voltage Vgs	:10V
Threshold Voltage Vgs	:3V
Power Dissipation Pd	:460W
Operating Temperature Max	:150°C
Transistor Case Style	:ISOTOP
No. of Pins	:4
MSL	:-
SVHC	:No SVHC (20-Jun-2013)
Current Id Max	:54A
Current Temperature	:25°C
External Depth	:38mm
External Length / Height	:12.2mm
External Width	:25.4mm
Fixing Centres	:31.6mm
Full Power Rating Temperature	:25°C
Isolation Voltage	:2.5kV
Junction Temperature Tj Max	:150°C
No. of Transistors	:1
On State resistance @ Vgs = 10V	:80mohm
Pulse Current Idm	:212A
Voltage Vds Typ	:500V
Voltage Vgs Max	:3V
Voltage Vgs Rds on Measurement	:10V
Voltage Vgs th Max	:4V
Weight (kg)	0.000036
Tariff No.	85411000

Documents & Media

RESOURCE TYPE	LINK
Datasheets	STE53NC50

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