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EIC Semiconductor Co., Ltd.

EIC Semiconductor Co., Ltd.- Diodes

EIC Semiconductor Co., Ltd. is a leading global manufacturer of discrete semiconductors, founded in 1984 and headquartered in Bangkok, Thailand. The company specializes in the design, production, and marketing of a wide range of discrete devices including diodes, rectifiers, bridge rectifiers, transient voltage suppressors (TVS), Zener diodes, Schottky diodes, and MOSFETs. EIC serves diverse industries such as automotive, consumer electronics, industrial automation, and power management, offering both standard and customized solutions to meet specific application needs. With a strong focus on quality and reliability, the company holds ISO 9001 and IATF 16949 certifications and operates advanced manufacturing facilities in Thailand. EIC's product portfolio is known for its robust performance and compliance with stringent international standards. Over the decades, the company has established a solid reputation in Asia and is expanding its global footprint through a network of distributors and sales offices worldwide. While not a top-tier semiconductor giant, EIC maintains a notable position in the medium-power discrete market, providing cost-effective components to original equipment manufacturers and contract manufacturers globally. The company invests in research and development to improve packaging technologies and enhance product efficiency. EIC Semiconductor's commitment to innovation and customer service has made it a preferred partner for many companies seeking reliable discrete semiconductor solutions.

03

Diodes - 型号列表

260 parts in total

Current - Test

Voltage - DC Reverse (Vr) (Max)

Voltage - Input (Min)

Voltage - Supply

Package / Case

Supplier Device Package

Current - Average Rectified (Io)

Operating Temperature - Junction

Impedance (Max) (Zzt)

Speed

Packaging

Capacitance @ Vr, F

Reverse Recovery Time (trr)

Mfr Part #Quantity AvailablePriceMfrSeriesPackagingPart StatusMounting TypeCurrent - TestPackage / CaseVoltage - Input (Min)Supplier Device PackageSpeedTechnologyCapacitance @ Vr, FVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Operating Temperature - JunctionReverse Recovery Time (trr)TolerancePower - MaxVoltage - SupplyImpedance (Max) (Zzt)Operating TemperatureBase Product Number
P6KE15CA
P6KE15CA

Diode TVS Single Bi-Dir 12.8V 600W 2-Pin DO-15

EIC Semiconductor

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10A07H
10A07H

. 10A07H - Diode 1000 V 10A Through Hole D6 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

304001600: ¥2.448EIC SEMICONDUCTOR INC.-Tape & Reel (TR)ActiveThrough Hole10 µA @ 1000 VD-6, Axial1 V @ 10 AD6Standard Recovery >500ns, > 200mA (Io)Standard80pF @ 4V, 1MHz1000 V10A-65°C ~ 150°C-------
10HCB
10HCB

. 10HCB - Zener Diode from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

1000010000: ¥0.1122EIC SEMICONDUCTOR INC.-Tape & Reel (TR)Active------------------
15HCB
15HCB

. 15HCB - Zener Diode from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

2000010000: ¥0.1122EIC SEMICONDUCTOR INC.-Tape & Reel (TR)Active------------------
1N4004BULK
1N4004BULK

. 1N4004BULK - Diode 400 V 1A Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

380001000: ¥0.612EIC SEMICONDUCTOR INC.-BagActiveThrough Hole5 µA @ 400 VDO-204AL, DO-41, Axial1.1 V @ 1 ADO-41Standard Recovery >500ns, > 200mA (Io)Standard15pF @ 4V, 1MHz400 V1A-65°C ~ 175°C2 µs------
1N4004T/R
1N4004T/R

. 1N4004T/R - Diode 400 V 1A Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

-EIC SEMICONDUCTOR INC.-Tape & Reel (TR)ActiveThrough Hole5 µA @ 400 VDO-204AL, DO-41, Axial1.1 V @ 1 ADO-41Standard Recovery >500ns, > 200mA (Io)Standard15pF @ 4V, 1MHz400 V1A-65°C ~ 175°C2 µs------
1N4005BULK
1N4005BULK

. 1N4005BULK - Diode 600 V 1A Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

70005000: ¥1.36EIC SEMICONDUCTOR INC.-BagActiveThrough Hole5 µA @ 600 VDO-204AL, DO-41, Axial1.1 V @ 1 ADO-41Standard Recovery >500ns, > 200mA (Io)Standard15pF @ 4V, 1MHz600 V1A-65°C ~ 175°C2 µs------
1N4005T/R
1N4005T/R

. 1N4005T/R - Diode 600 V 1A Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

-EIC SEMICONDUCTOR INC.-Tape & Reel (TR)ActiveThrough Hole5 µA @ 600 VDO-204AL, DO-41, Axial1.1 V @ 1 ADO-41Standard Recovery >500ns, > 200mA (Io)Standard15pF @ 4V, 1MHz600 V1A-65°C ~ 175°C2 µs------
1N4006BULK
1N4006BULK

. 1N4006BULK - Diode 800 V 1A Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

480001000: ¥0.884EIC SEMICONDUCTOR INC.-BagActiveThrough Hole5 µA @ 800 VDO-204AL, DO-41, Axial1.1 V @ 1 ADO-41Standard Recovery >500ns, > 200mA (Io)Standard15pF @ 4V, 1MHz800 V1A-65°C ~ 175°C2 µs------
1N4006T/R
1N4006T/R

. 1N4006T/R - Diode 800 V 1A Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

-EIC SEMICONDUCTOR INC.-Tape & Reel (TR)ActiveThrough Hole5 µA @ 800 VDO-204AL, DO-41, Axial1.1 V @ 1 ADO-41Standard Recovery >500ns, > 200mA (Io)Standard15pF @ 4V, 1MHz800 V1A-65°C ~ 175°C2 µs------
1N4007BULK
1N4007BULK

. 1N4007BULK - Diode 1000 V 1A Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

160001000: ¥1.224EIC SEMICONDUCTOR INC.-BagActiveThrough Hole5 µA @ 1000 VDO-204AL, DO-41, Axial1.1 V @ 1 ADO-41Standard Recovery >500ns, > 200mA (Io)Standard15pF @ 4V, 1MHz1000 V1A-65°C ~ 175°C2 µs------
1N4007C.B.O.
1N4007C.B.O.

. 1N4007C.B.O. - Diode 1000 V 1A Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

-EIC SEMICONDUCTOR INC.-BagActiveThrough Hole5 µA @ 1000 VDO-204AL, DO-41, Axial1.1 V @ 1 ADO-41Standard Recovery >500ns, > 200mA (Io)Standard15pF @ 4V, 1MHz1000 V1A-65°C ~ 175°C2 µs------
1N4148T/R
1N4148T/R

. 1N4148T/R - Diode 75 V 150mA Through Hole DO-35 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

-EIC SEMICONDUCTOR INC.-Tape & Reel (TR)ActiveThrough Hole5 µA @ 75 VDO-204AH, DO-35, Axial1 V @ 10 mADO-35Small Signal =< 200mA (Io), Any SpeedStandard-75 V150mA175°C4 ns-----1N4148
1N4728ABULK
1N4728ABULK

. 1N4728ABULK - Zener Diode 3.3 V 1 W ±5% Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

49901000: ¥1.02EIC SEMICONDUCTOR INC.-BagActiveThrough Hole100 µA @ 1 VDO-204AL, DO-41, Axial1.2 V @ 200 mADO-41-------±5%1 W3.3 V10 Ohms-55°C ~ 175°C (TJ)-
1N4728AT/R
1N4728AT/R

. 1N4728AT/R - Zener Diode 3.3 V 1 W ±5% Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

-EIC SEMICONDUCTOR INC.-Tape & Reel (TR)ActiveThrough Hole100 µA @ 1 VDO-204AL, DO-41, Axial1.2 V @ 200 mADO-41-------±5%1 W3.3 V10 Ohms-55°C ~ 175°C (TJ)-
1N4730ABULK
1N4730ABULK

. 1N4730ABULK - Zener Diode 3.9 V 1 W ±5% Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

39901000: ¥1.02EIC SEMICONDUCTOR INC.-BagActiveThrough Hole50 µA @ 1 VDO-204AL, DO-41, Axial1.2 V @ 200 mADO-41-------±5%1 W3.9 V9 Ohms-55°C ~ 175°C (TJ)-
1N4730AT/R
1N4730AT/R

. 1N4730AT/R - Zener Diode 3.9 V 1 W ±5% Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

-EIC SEMICONDUCTOR INC.-Tape & Reel (TR)ActiveThrough Hole50 µA @ 1 VDO-204AL, DO-41, Axial1.2 V @ 200 mADO-41-------±5%1 W3.9 V9 Ohms-55°C ~ 175°C (TJ)-
1N4731ABULK
1N4731ABULK

. 1N4731ABULK - Zener Diode 4.3 V 1 W ±5% Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

128001000: ¥0.884EIC SEMICONDUCTOR INC.-BagActiveThrough Hole10 µA @ 1 VDO-204AL, DO-41, Axial1.2 V @ 200 mADO-41-------±5%1 W4.3 V9 Ohms-55°C ~ 175°C (TJ)-
1N4731AT/R
1N4731AT/R

. 1N4731AT/R - Zener Diode 4.3 V 1 W ±5% Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

-EIC SEMICONDUCTOR INC.-Tape & Reel (TR)ActiveThrough Hole10 µA @ 1 VDO-204AL, DO-41, Axial1.2 V @ 200 mADO-41-------±5%1 W4.3 V9 Ohms-55°C ~ 175°C (TJ)-
1N4732ABULK
1N4732ABULK

. 1N4732ABULK - Zener Diode 4.7 V 1 W ±5% Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now!

EIC Semiconductor Co., Ltd.

19881000: ¥0.816EIC SEMICONDUCTOR INC.-BagActiveThrough Hole10 µA @ 1 VDO-204AL, DO-41, Axial1.2 V @ 200 mADO-41-------±5%1 W4.7 V8 Ohms-55°C ~ 175°C (TJ)-
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