ONEIC.US
Efficient Power Conversion Corporation

Efficient Power Conversion Corporation- Bipolar Transistors

Founded in November 2007, Efficient Power Conversion Corporation (EPC) is a fabless semiconductor company headquartered in El Segundo, California, USA. The company specializes in the design, development, marketing, and sales of enhancement-mode gallium nitride (GaN) power management devices. EPC was the first to introduce enhancement-mode GaN-on-silicon transistors, branded as eGaN® FETs, revolutionizing power conversion efficiency. Its product portfolio includes discrete eGaN FETs, integrated circuits, and power modules that deliver significantly higher performance than traditional silicon power MOSFETs. These components enable higher switching frequencies, smaller form factors, and lower system costs in applications such as DC-DC converters, lidar, motor drives, and RF envelope tracking. EPC serves markets including data centers, automotive electronics, telecommunications, consumer electronics, and industrial systems. The innovative eGaN technology offers voltage ratings from 15 V to 200 V, providing faster switching, smaller die sizes, and superior thermal management. By leveraging mature silicon foundries, EPC combines the high performance of GaN with the scalability and reliability of silicon manufacturing. With over a decade of expertise, EPC is a leading provider of GaN power semiconductors, driving the industry toward more energy-efficient and compact power solutions. The company maintains a global presence, offering comprehensive design support and reference designs to accelerate GaN adoption.

03

Bipolar Transistors - 型号列表

28 parts in total

Current - Continuous Drain (Id) @ 25degC

Other Names

Gate Charge (Qg) (Max) @ Vgs

Input Capacitance (Ciss) (Max) @ Vds

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Standard Package

Drain to Source Voltage (Vdss)

Packaging

RoHS

Mounting Type

Package / Case

Supplier Device Package

Mfr Part #Quantity AvailablePriceStandard PackageRoHSFET TypeFET FeatureVgs(th) (Max) @ IdRds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25degCPackagingMounting TypeSupplier Device PackagePackage / CaseOther NamesSeries
EPC8007ENGR
EPC8007ENGR

TRAN GAN 40V 3.8A BUMPED DIE

EPC

6010: ¥71.4010Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate700mV @ 250µA160 mOhm @ 500mA, 5V0.302nC @ 20V40V39pF @ 20V3.8A (Ta)Bulk*DieDie917-EPC8007ENGR-
EPC8007TENGR
EPC8007TENGR

TRANS GAN 40V 3.8A BUMPED DIE

EPC

242: ¥78.542Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA160 mOhm @ 500mA, 5V0.302nC @ 20V40V39pF @ 20V3.8A (Tc)Bulk*DieDie--
EPC8008ENGR
EPC8008ENGR

TRAN GAN 40V 2.7A BUMPED DIE

EPC

3010: ¥106.7610Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate700mV @ 250µA325 mOhm @ 500mA, 5V0.177nC @ 20V40V25pF @ 20V2.7A (Ta)Bulk*DieDie917-EPC8008ENGR-
EPC8008TENGR
EPC8008TENGR

TRANS GAN 40V 2.7A BUMPED DIE

EPC

262: ¥117.4362Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA325 mOhm @ 500mA, 5V0.177nC @ 20V40V25pF @ 20V2.7A (Tc)Bulk*DieDie--
EPC8005ENGR
EPC8005ENGR

TRAN GAN 65V 2.9A BUMPED DIE

EPC

10010: ¥122.4010Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate700mV @ 250µA275 mOhm @ 500mA, 5V0.218nC @ 32.5V65V29pF @ 32.5V2.9A (Ta)Bulk*DieDie917-EPC8005ENGR-
EPC2018
EPC2018

TRANS GAN 150V 12A BUMPED DIE

EPC

88851: ¥85.068500Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 3mA25 mOhm @ 6A, 5V7.5nC @ 5V150V540pF @ 100V12A (Ta)Tape & Reel (TR)Surface MountDieDie917-1034-2-
EPC8004ENGR
EPC8004ENGR

TRAN GAN 40V 4.4A BUMPED DIE

EPC

23010: ¥133.9610Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate700mV @ 250µA125 mOhm @ 500mA, 5V0.358nC @ 20V40V45pF @ 20V4.4A (Ta)Bulk*DieDie917-EPC8004ENGR-
EPC2815
EPC2815

TRANS GAN 40V 33A BUMPED DIE

EPC

9581: ¥82.484100Contains lead / RoHS non-compliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 9mA4 mOhm @ 33A, 5V11.6nC @ 5V40V1200pF @ 20V33A (Ta)Tape & Reel (TR)Surface MountDieDie917-1036-2*
EPC2801
EPC2801

TRANS GAN 100V 25A BUMPED DIE

EPC

900100: ¥65.314100Contains lead / RoHS non-compliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 5mA7 mOhm @ 25A, 5V10nC @ 5V100V950pF @ 50V25A (Ta)Tape & Reel (TR)Surface MountDieDie917-1035-2-
EPC2818
EPC2818

TRANS GAN 150V 12A BUMPED DIE

EPC

101: ¥175.10100Contains lead / RoHS non-compliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 3mA25 mOhm @ 6A, 5V7.5nC @ 5V150V540pF @ 100V12A (Ta)Tape & Reel (TR)Surface MountDieDie917-1037-2*
EPC8009ENGR
EPC8009ENGR

TRAN GAN 65V 4.1A BUMPED DIE

EPC

15010: ¥122.4010Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate700mV @ 250µA138 mOhm @ 500mA, 5V0.380nC @ 32.5V65V47pF @ 32.5V4.1A (Ta)Bulk*DieDie917-EPC8009ENGR-
EPC8002ENGR
EPC8002ENGR

TRANS GAN 65V 2A BUMPED DIE

EPC

29010: ¥123.0810Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate720mV @ 250µA530 mOhm @ 500mA, 5V0.141nC @ 32.5V65V21pF @ 32.5V2A (Ta)BulkSurface MountDieDie917-EPC8002ENGR-
EPC8003ENGR
EPC8003ENGR

TRAN GAN 100V 2.5A BUMPED DIE

EPC

6010: ¥591.6010Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate750mV @ 250µA300 mOhm @ 500mA, 5V0.315nC @ 50V100V38pF @ 50V2.5A (Ta)Bulk*DieDie917-EPC8003ENGR-
EPC8002TENGR
EPC8002TENGR

TRANS GAN 65V 2A BUMPED DIE

EPC

242: ¥135.3882Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA530 mOhm @ 500mA, 5V0.141nC @ 32.5V65V21pF @ 32.5V2A (Tc)Bulk*DieDie--
EPC8004TENGR
EPC8004TENGR

TRANS GAN 40V 4.4A BUMPED DIE

EPC

102: ¥147.3562Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA125 mOhm @ 500mA, 5V0.358nC @ 20V40V45pF @ 20V4.4A (Tc)Bulk*DieDie--
EPC8005TENGR
EPC8005TENGR

TRANS GAN 65V 2.9A BUMPED DIE

EPC

102: ¥134.642Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA275 mOhm @ 500mA, 5V0.218nC @ 32.5V65V29pF @ 32.5V2.9A (Tc)****--
EPC8010ENGR
EPC8010ENGR

TRANS GAN 100V BUMPED DIE TRANS GAN 100V 3.4A BUMPED DIE

EPC

9010: ¥124.4410Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA160 mOhm @ 500mA, 5V0.354nC @ 50V100V47pF @ 50V3.4A (Ta)***-917-EPC8010ENGR*
EPC8003TENGR
EPC8003TENGR

TRANS GAN 100V 2.5A BUMPED DIE

EPC

222: ¥137.6322Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA300 mOhm @ 500mA, 5V0.315nC @ 50V100V38pF @ 50V2.5A (Tc)Bulk*DieDie--
EPC8009TENGR
EPC8009TENGR

TRANS GAN 65V 4.1A BUMPED DIE

EPC

102: ¥134.642Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA138 mOhm @ 500mA, 5V0.380nC @ 32.5V65V47pF @ 32.5V4.1A (Tc)Bulk*DieDie--
EPC8010TENGR
EPC8010TENGR

TRANS GAN 100V BUMPED DIE TRANS GAN 100V 3.4A BUMPED DIE

EPC

382: ¥136.8842Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA160 mOhm @ 500mA, 5V0.354nC @ 50V100V47pF @ 50V3.4A (Ta)***-917-EPC8010TENGR*
Page 1 / 2
1