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Everspin Technologies, Inc.

Everspin Technologies, Inc.

Everspin Technologies, Inc. is a semiconductor company founded in 2006 as a spin-off from Freescale Semiconductor, headquartered in Chandler, Arizona. The company pioneered the world's first commercial MRAM (Magnetoresistive Random Access Memory) product in 2006 and is today the leading developer and manufacturer of discrete and embedded MRAM. Everspin's MRAM is the industry's fastest non-volatile memory, offering unlimited endurance, high reliability, and over 10-year data retention. The product portfolio includes more than 100 MRAM products supporting parallel and serial interfaces, serving markets such as data storage, industrial automation, gaming, energy management, communications, transportation, and avionics. Everspin operates a fab-light model, utilizing standard CMOS wafers from foundries and adding its proprietary magnetic back-end-of-line processing in its own facility. Its first-generation Toggle MRAM technology has received multiple industry awards and forms the foundation of many products. The company is advancing next-generation Spin-Torque MRAM (ST-MRAM) that uses spin-polarized current for switching, enabling gigabit densities for persistent DRAM applications and new storage-class memory. With over 600 active patents and applications, Everspin holds a critical intellectual property portfolio that is fundamental to MRAM technologies. Everspin is positioned to be the first volume supplier of ST-MRAM products to the market. Everspin's MRAM solutions provide a unique combination of non-volatility, speed, and endurance, making them ideal for mission-critical data logging, buffer memory, and caching applications.

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MR256D semiconductor

High-speed parallel MRAM NVRAM modules for data storage applications

MR25H10 semiconductor

1Mb serial SPI MRAM NVRAM chips in 8-pin DFN packages

MR25H40 semiconductor

3.3V 4Mb SPI NVRAM MRAM chips in compact 8-pin DFN packages

MR10Q010 Memory

1 Mb High Speed Quad SPI MRAM, Dual 3.3v VDD/1.8v VDDQ, I-Temp, 24-BGA

MR20H40 Memory

IC MRAM 4MBIT 50MHZ 8DFN NVRAM 4Mb 3.3V 50Mhz 512K x 8 SPI

MR256DL08B NVRAM

IC MRAM 256KBIT 45NS 48FBGA NVRAM 256Kb, 2.7V 32K x 8 45ns Parallel MRAM

MR5A16A MRAM
MR4A08B Memory

MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 45 ns 44-TSOP2

MR0A08BSO35 NVRAM

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM NVRAM MRAM Parallel 1M-Bit 3.3V 32-Pin SOIC T/R IC MRAM 1MBIT 35NS 32SOIC

MR256A08B semiconductor

High-speed 256Kb MRAM NVRAM modules in various compact form factors

MR25H128A NVRAM

NVRAM 128Kb 3.3V 16Kx8 SPI

MR2A16A NVRAM

NVRAM 3.3V 512Kx8 MRAM pre-qual sample IC MRAM 4MBIT 35NS 44TSOP NVRAM 4MB 3.3V 35ns 512K x 8 MRAM

MR4A16B NVRAM

MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 45 ns 54-TSOP2

MR0A08 semiconductor

1Mbit MRAM memory chips with 3.3V and various package options

MR256A08 semiconductor

High-speed 256Kb MRAM NVRAM modules in various compact form factors

MR25H256 semiconductor

256Kb non-volatile MRAM memory chips with SPI interface

MR2A08 semiconductor

4Mbit MRAM memory chips with 35ns speed in TSOP and FBGA packages

MR4A16 semiconductor

16Mb parallel MRAM NVRAM chips in TSOP and FBGA packages

MR0A16A NVRAM

IC MRAM 1MBIT 35NS 44TSOP NVRAM 1Mb 3.3V 64K x 16 35ns Parallel MRAM

MR0D08B NVRAM

NVRAM 1Mb 3.3V 128Kx8 45ns Parallel MRAM IC MRAM 1MBIT 45NS 48FBGA