ONEIC.US
  1. Home
  2. Manufacturer
  3. Fuji Electric Co., Ltd.
  4. Bipolar Transistors - General

Fuji Electric Co., Ltd.

Fuji Electric Co., Ltd.- Bipolar Transistors - General

Fuji Electric Co., Ltd., originally established in 1923 as a joint venture between Furukawa Electric and Siemens, is a global leader headquartered in Tokyo, Japan, focusing on energy, automation, and industrial systems. The company’s core business spans power generation equipment, power electronics, semiconductors, and vending machines, serving industries from utilities to automotive. In the electronic components sector, Fuji Electric is renowned for its advanced power semiconductor portfolio, including IGBT modules, power MOSFETs, and diodes, widely used in motor drives, inverters, and renewable energy systems. Its product lines also feature pressure sensors, magnetic sensors, and mixed-signal ICs for automotive and industrial applications. Notable semiconductor series include the ‘Super J-MOS’ MOSFETs, ‘V-Series’ IGBTs, and ‘F-Series’ power modules, all delivering high efficiency and reliability. The company has maintained a strong presence in China since 1965, when it supplied the country’s first valve-type hydro generator to Shehong County, Sichuan Province. Fuji Electric ranks among the top global power device manufacturers, leveraging deep expertise in thermal and electric energy management. The firm continuously innovates towards carbon neutrality, emphasizing energy-saving and eco-friendly solutions. With R&D centers and production bases worldwide, Fuji Electric remains a key partner in industrial upgrade and sustainable development. Its power semiconductors are integral to electric vehicles, industrial robots, and smart grid infrastructure, reinforcing its market influence.

03

Bipolar Transistors - General - 型号列表

5 parts in total

Voltage - Clamping

Current Rating (Max)

Resistance - RDS(On)

Contact Voltage (Max)

Current - Peak Pulse (8/20us)

Drain to Source Voltage (Vdss)

Current - Continuous Drain (Id) @ 25degC

Mfr Part #Quantity AvailablePriceTariff NoVgs (Max)Transistor TypeVgs(th) (Max) @ IdVoltage - ClampingVoltage - ThresholdCurrent Rating (Max)Resistance - RDS(On)Contact Voltage (Max)Power Dissipation (Max)Current - Peak Pulse (8/20us)Drain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25degCWeightTerminationLead SpacingNumber of PinsPackage / CaseMaterial FinishTemperature - TestOperating TemperatureOperating Temperature - JunctionCurrent
2SK3586-01
2SK3586-01

MOSFET, N, TO-220AB

FUJI ELECTRIC

101: ¥16.6685412900:10V:N Channel:5V:319.2mJ:5V:50A:25mohm:100V:270W:292A:100V:73A0.002:Through Hole:5.45mm:3:TO-220AB:-:25°C:150°C:150°C-
2SK3590-01
2SK3590-01

MOSFET, N, TO-220AB

FUJI ELECTRIC

-85412900:10V:N Channel:5V:272.5mJ:5V:57A:41mohm:150V:270W:228A:150V:57A0.002:Through Hole:5.45mm:3:TO-220AB:-:25°C:150°C:150°C-
2SK3772-01
2SK3772-01

MOSFET, N, TO-220AB

FUJI ELECTRIC

101: ¥31.89285412900:10V:N Channel:5V:597.4mJ:5V:32A:130mohm:300V:270W:128A:300V:32A0.002:Through Hole:5.45mm:3:TO-220AB:-:25°C:150°C:150°C:32A
CR6L-200G AC600V
CR6L-200G AC600V

富士(FUJI) 晶体管

富士

------------------------
2RI80A-080
2RI80A-080

富士(FUJI) 晶体管

富士

------------------------
Page 1 / 1
1