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GeneSiC Semiconductor, Inc.
High-Power Discrete Semiconductor Modules

GeneSiC Semiconductor, Inc.- High-Power Discrete Semiconductor Modules

GeneSiC Semiconductor, Inc., founded in 2004 and headquartered in Dulles, Virginia, is a leading developer and manufacturer of silicon carbide (SiC) power semiconductors. The company specializes in high-performance SiC discrete devices and modules for demanding applications such as electric vehicles, industrial motor drives, aerospace, and renewable energy systems. Its product portfolio includes 650V, 1200V, and 1700V SiC MOSFETs, Schottky diodes, bare dies, and custom power modules, all optimized for high-efficiency, high-temperature, and high-frequency operation. GeneSiC’s devices are known for their ruggedness, low switching losses, and excellent cost-performance ratios, making them a preferred choice in high-reliability sectors. In early 2023, the company was acquired by Navitas Semiconductor, forming a combined GaN and SiC powerhouse that accelerates the adoption of next-generation wide-bandgap technologies. GeneSiC holds a strong intellectual property portfolio with over 100 patents in SiC material and device design. It operates advanced fabrication and testing facilities in the United States, ensuring stringent quality control. The company has established a significant presence in the global SiC market, serving tier-one automotive and industrial customers. Prior to the acquisition, GeneSiC was recognized as one of the few independent SiC suppliers with a fully integrated manufacturing capability from epitaxy to packaged products.

High-Power Discrete Semiconductor Modules - 型号列表

27 parts in total

Mfr Part #	Quantity Available	Price	Package / Case	RoHS	Factory Pack Quantity	Configuration	Packaging	Operating Temperature	Series	REACH	ESD Protection	Current Rating (Max)	Voltage - Reverse Standoff (Typ)	Voltage - Supply	Standard Package	Mounting Type	Mounting Style	Supplier Device Package	Manufacturer	Product	Speed	Current - Test	Voltage - Input (Min)	Current - Peak Pulse (8/20us)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io) (per Diode)	Diode Type	Current - Continuous Drain (Id) @ 25degC	Current - DC Forward (If) (Max)	Other Names	Voltage Regulation - Load	Technology	Diode Configuration	Voltage - Gate Trigger (Vgt) (Max)	Type	Transistor Type	Current - Collector (Ic) (Max)	Vce(on) (Max) @ Vge, Ic	Reverse Recovery Time (trr)	Tariff No	Weight	Number of Pins	Input	IGBT Type	Vgs (Max)	NTC Thermistor	Vce Saturation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Cies) @ Vce	Current - Collector Cutoff (Max)	FET Type	FET Feature	Power - Max	Power - Rated	Rds On (Max) @ Id, Vgs	Power - Average Forward	On-State Resistance (Max)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)
MBRH20045R 45V 200A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) genesic-semi	29	1: ¥178.296	D-67 (HALF PAK)	Yes	50	Reverse	-	-	-	Yes	No	200	45	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 GA100XCP12-227 IGBT Modules 1200V 100A SIC IGBT CoPak IGBT,SIC,1200V,100A,SOT-227 GeneSiC Semiconductor	10	1: ¥2,271.608	:SOT-227	-	-	-	-	:-40°C	-	-	-	-	-	:1200V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:N Channel	:100A	-	-	85411000	0.029	:3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBRH12040 40V 120A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration) genesic-semi	10	1: ¥195.84	D-67 (HALF PAK)	Yes	50	Standard	-	-	-	Yes	No	120	40	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBRH12040R 40V 120A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) genesic-semi	34	1: ¥199.32	D-67 (HALF PAK)	Yes	50	Reverse	-	-	-	Yes	No	120	40	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBRH20045 45V 200A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration) genesic-semi	34	1: ¥244.62	D-67 (HALF PAK)	Yes	50	Standard	-	-	-	Yes	No	200	45	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBRH12045R 45V 120A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) genesic-semi	25	1: ¥195.84	D-67 (HALF PAK)	Yes	50	Reverse	-	-	-	Yes	No	120	45	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBRH12020R 20V 120A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) genesic-semi	10	1: ¥181.20	D-67 (HALF PAK)	Yes	50	Reverse	-	-	-	Yes	No	120	20	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBRH12020 20V 120A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration) genesic-semi	10	1: ¥195.772	D-67 (HALF PAK)	Yes	50	Standard	-	-	-	Yes	No	120	20	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FST8335SM Schottky Diodes & Rectifiers 35V 80A Schottky Recovery DIODE SCHOTTKY 35V 80A D61-3SM GeneSiC Semiconductor	10	1: ¥83.776	D61-3SM	RoHS Compliant	-	-	Bulk	- 40 C to + 175 C	FST833	-	-	-	-	0.75 V	30	Chassis Mount	Through Hole	D61-3SM	-	Schottky Diodes	Fast Recovery = 200mA (Io)	1.5mA @ 20V	650mV @ 80A	800 A	1 uA	35V	80A (DC)	Schottky	80 A	-	FST8335SMGN	35 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FST8345M Schottky Diodes & Rectifiers 45V 80A Schottky Recovery DIODE SCHOTTKY 45V 80A D61-3M GeneSiC Semiconductor	10	1: ¥83.776	D61-3M	RoHS Compliant	-	-	Bulk	- 40 C to + 175 C	FST834	-	-	-	-	0.75 V	30	Chassis Mount	Through Hole	D61-3M	GeneSiC Semiconductor	Schottky Diodes	Fast Recovery = 200mA (Io)	1.5mA @ 20V	650mV @ 80A	800 A	1 uA	45V	80A (DC)	Schottky	80 A	80 A	FST8345MGN	45 V	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FST8345SM Schottky Diodes & Rectifiers 45V 80A Schottky Recovery DIODE SCHOTTKY 45V 80A D61-3SM GeneSiC Semiconductor	10	1: ¥83.776	D61-3SM	RoHS Compliant	-	-	Bulk	- 40 C to + 175 C	FST834	-	-	-	-	0.75 V	30	Chassis Mount	Through Hole	D61-3SM	-	Schottky Diodes	Fast Recovery = 200mA (Io)	1.5mA @ 20V	650mV @ 80A	800 A	1 uA	45V	80A (DC)	Schottky	80 A	-	FST8345SMGN	45 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FST10080 80V 100A TO-249AB Silicon Rectifier Module - Schottky (Standard Configuration) genesic-semi	50	1: ¥350.948	TO-249AB	Yes	40	Standard	-	-	-	Yes	No	100	80	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 GB100XCP12-227 IGBT 1200V 100A SOT-227 IGBT Modules 1200V 100A SIC IGBT CoPak GeneSiC Semiconductor	27	1: ¥1,505.724	SOT-227-4	RoHS Compliant	10	Single	Bulk	- 40 C	GB100XCP12	-	-	-	-	1200V	1	Chassis Mount	SMD/SMT	SOT-227	GeneSiC Semiconductor	IGBT Silicon Modules	-	-	-	-	-	-	-	-	-	-	-	-	SiC	-	-	-	-	100A	2V @ 15V, 100A	-	-	-	-	Standard	PT	20 V	No	1.9 V	- 400 nA	8.55nF @ 25V	1mA	-	-	-	-	-	-	-	-	-
GA040TH65 MOD THYRSTR SIC SGL 6500V SOT227 SCR Modules 6500V - 40A SiC Discrete Thyrstr GeneSiC Semiconductor	-		-	-	1	-	Bulk	-	GA04	-	-	-	-	-	-	-	-	-	GeneSiC Semiconductor	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GA060TH65 MOD THYRSTR SIC SGL 6500V SOT227 SCR Modules 6500V - 60A SiC Discrete Thyrstr GeneSiC Semiconductor	-		-	-	1	-	Bulk	-	GA06	-	-	-	-	-	-	-	-	-	GeneSiC Semiconductor	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GA080TH65 MOD THYRSTR SIC SGL 6500V SOT227 SCR Modules 6500V - 80A SiC Discrete Thyrstr GeneSiC Semiconductor	-		-	-	1	-	Bulk	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 GA03JT12-247 TRANS SJT 1200V 3A TO-247AB MOSFET SiC Super Junc Trans 1200V-Rds 550mO-3A JFET SiC Super Junc Trans 1200V-Rds 550mO-3A GeneSiC Semiconductor	116	1: ¥69.156	TO-247-3	RoHS Compliant	30	Single	Tube	- 55 C	GA03	-	-	-	-	-	30	Through Hole	Through Hole	TO-247AB	GeneSiC Semiconductor	-	-	-	-	-	-	-	-	-	3A (Tc) (95°C)	-	-	-	SiC	-	-	-	N-Channel	-	1200 V	-	-	-	-	-	-	-	-	-	-	-	-	Silicon Carbide, Normally Off	Super Junction	91W	5 W	460 mOhm @ 3A	5 W	470 mOhms	1200V (1.2kV)	3 A
MSRTA300100(A)D DIODE STD REC 1000V 300A 3TOWER Rectifiers 1000V 300A Forward GeneSiC Semiconductor	10	25: ¥371.28	Three Tower	Lead free / RoHS Compliant	-	Dual Series	Bulk	- 55 C to + 150 C	*	-	-	-	-	1.1 V	25	Chassis Mount	Screw Mount	Three Tower	GeneSiC Semiconductor	Rectifiers	*	*	*	3800 A	20 uA	*	*	*	-	300 A	-	-	-	*	1000 V	Standard Recovery Rectifiers	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSRTA300120(A)D DIODE STD REC 1200V 300A 3TOWER Rectifiers 1200V 300A Forward GeneSiC Semiconductor	10	25: ¥371.28	Three Tower	Lead free / RoHS Compliant	-	Dual Series	Bulk	- 55 C to + 150 C	-	-	-	-	-	1.1 V	25	Chassis Mount	Screw Mount	Three Tower	GeneSiC Semiconductor	Rectifiers	Standard Recovery >500ns, > 200mA (Io)	25µA @ 200V	1.2V @ 300A	3800 A	20 uA	1200V (1.2kV)	300A (DC)	Standard	-	300 A	-	-	-	1 Pair Series Connection	1200 V	Standard Recovery Rectifiers	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSRTA300140(A)D DIODE STD REC 1400V 300A 3TOWER Rectifiers 1400V 300A Forward GeneSiC Semiconductor	10	25: ¥371.28	Three Tower	Lead free / RoHS Compliant	-	Dual Series	Bulk	- 55 C to + 150 C	*	-	-	-	-	1.1 V	25	Chassis Mount	Screw Mount	Three Tower	GeneSiC Semiconductor	Rectifiers	*	*	*	3800 A	20 uA	*	*	*	-	300 A	-	-	-	*	1400 V	Standard Recovery Rectifiers	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-