genesic-semi- MOSFET Modules

GeneSiC Semiconductor, Inc., founded in 2004 and headquartered in Dulles, Virginia, is a leading developer and manufacturer of silicon carbide (SiC) power semiconductors. The company specializes in high-performance SiC discrete devices and modules for demanding applications such as electric vehicles, industrial motor drives, aerospace, and renewable energy systems. Its product portfolio includes 650V, 1200V, and 1700V SiC MOSFETs, Schottky diodes, bare dies, and custom power modules, all optimized for high-efficiency, high-temperature, and high-frequency operation. GeneSiC’s devices are known for their ruggedness, low switching losses, and excellent cost-performance ratios, making them a preferred choice in high-reliability sectors. In early 2023, the company was acquired by Navitas Semiconductor, forming a combined GaN and SiC powerhouse that accelerates the adoption of next-generation wide-bandgap technologies. GeneSiC holds a strong intellectual property portfolio with over 100 patents in SiC material and device design. It operates advanced fabrication and testing facilities in the United States, ensuring stringent quality control. The company has established a significant prese

MOSFET Modules - 型号列表

5 parts in total

Mfr Part #	Quantity Available	Price	RoHS	Factory Pack Quantity	Packaging	Package / Case	Manufacturer	Configuration	REACH	ESD Protection	Current Rating (Max)	Voltage - Reverse Standoff (Typ)	Standard Package	FET Type	FET Feature	Power - Max	Power - Rated	Transistor Type	Rds On (Max) @ Id, Vgs	Power - Average Forward	Vce(on) (Max) @ Vge, Ic	On-State Resistance (Max)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current - Continuous Drain (Id) @ 25degC	Mounting Type	Mounting Style	Supplier Device Package	Series	Technology	Operating Temperature
2 GA03JT12-247 GeneSiC Semiconductor	116	1: $69.156	RoHS Compliant	30	Tube	TO-247-3	GeneSiC Semiconductor	Single	-	-	-	-	30	Silicon Carbide, Normally Off	Super Junction	91W	5 W	N-Channel	460 mOhm @ 3A	5 W	1200 V	470 mOhms	1200V (1.2kV)	3 A	3A (Tc) (95°C)	Through Hole	Through Hole	TO-247AB	GA03	SiC	- 55 C
GA100SBJT12-FR4 GeneSiC Semiconductor	10	1: $1,870.00	RoHS Compliant	-	Bulk	-	GeneSiC Semiconductor	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GA100JT12-227 GeneSiC Semiconductor	76	1: $1,367.276	RoHS Compliant	-	Tube	-	GeneSiC Semiconductor	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBR200150CT genesic-semi	25	1: $358.36	Yes	25	-	Twin Tower	-	Standard	Yes	No	200	150	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MBR200150CTR genesic-semi	-		Yes	25	-	Twin Tower	-	Reverse	Yes	No	200	150	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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genesic-semi- MOSFET Modules

MOSFET Modules - 型号列表

Configuration

Factory Pack Quantity

RoHS

Packaging

Package / Case