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SK hynix Inc.

SK hynix Inc.- General Purpose Integrated Circuits

SK hynix Inc. is a leading global semiconductor company headquartered in Icheon, South Korea. Founded in 1983 as Hyundai Electronics Industries Co., Ltd., it later separated from Hyundai Group and rebranded as Hynix Semiconductor Inc. in 2001, and became SK hynix after acquisition by SK Group in 2012. The company specializes in memory and storage solutions, primarily DRAM (Dynamic Random-Access Memory) and NAND Flash products. Its key DRAM offerings include high-performance DDR, LPDDR for mobile devices, and groundbreaking High Bandwidth Memory (HBM) for AI and data centers. In NAND Flash, it provides robust solid-state drives (SSDs) and embedded memory for consumer and enterprise markets. SK hynix ranks as the world's second-largest DRAM manufacturer and a top-tier supplier of NAND Flash, holding a significant position in the global semiconductor industry. With cutting-edge nanoscale process technology and substantial R&D investment, the company continuously advances semiconductor innovation. It operates multiple advanced fabrication facilities in South Korea and China, and employs tens of thousands worldwide. In 2024, SK hynix solidified its lead in the HBM market, powering next-generation AI computing and cloud infrastructure.

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General Purpose Integrated Circuits - 型号列表

12 parts in total

Memory Size

Number of Words

Memory

Access Time

Manufacturer

Interface

Package Cooled

Material Finish

Size / Dimension

Voltage - Supply (Min)

Width

Height

Length

Package / Case

Primary Material

Operating Temperature

Mfr Part #Quantity AvailablePriceMemory SizeOperating TemperatureInterfaceAccess TimeTariff NoWeightMaterial FinishMemoryMemory TypeVoltage - SupplyNumber of PinsPackage / CaseVoltage - Supply (Min)Number of Bits per ElementWidthHeightLengthMounting TypePackage CooledPrimary MaterialSize / DimensionNumber of PositionsNumber of WordsMemory OrganizationTerminationManufacturerVoltage RatingRoHS
H27U1G8F2BTR-BC
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H27U1G8F2BTR-BC

H27U1G8F2BTR-BC Flash Memory 1Gbit, 128M x 8 bit, 25000ns, Maximum of 3.3V, 48-Pin, TSOP IC, MEMORY, FLASH NAND 1GB, TSOP48 ICFLASH,H27U1G8F2BTR-BC

Hynix

10960: ¥11.14291Gbit+70 °C:-25000ns854232610.002188:-:128M x 8bit:Flash - NAND:2.7V:48:TSOP3.3 V8bit18.4mm1mm12mmSurface MountTSOPSLC12 x 18.4 x 1mm48128MSymmetrical:SMD128M x 8 bit-RoHS Compliant Part
HY27US08561A-TPCB
HY27US08561A-TPCB

HY27US08561A-TPCB, Serial Flash Memory 256Mbit, 32M x 8 bit, 12000ns, 2.7V, 48-Pin, TSOP-1

Hynix

101: ¥19.176256Mbit+70 °CSerial12000ns--------3.6 V8bit12.12mm1.03mm18.5mmSurface MountTSOP-1NAND18.5 x 12.12 x 1.03mm4832MSymmetrical-32M x 8 bit2.7 V-
HY27US08281A-TPCB
2
HY27US08281A-TPCB

HY27US08281A-TPCB, Parallel Flash Memory 128Mbit, 10000ns, 2.7V, 48-Pin, TSOP-1 FLASHNAND128MBTSOP3V

Hynix

102: ¥16.218128Mbit+70 °CParallel10000ns--------3.6 V8bit18.4mm1.03mm12mmSurface MountTSOP INAND12 x 18.4 x 1.03mm4816MSymmetrical--2.7 VRoHS Compliant Part
HY27UF084G2B-TPCB
3
HY27UF084G2B-TPCB

HY27UF084G2B-TPCB, Serial Flash Memory 4Gbit, 512M x 8 bit, 25000ns, 2.7V, 48-Pin, TSOP-1 IC, MEMORY, FLASH NAND 4GBIT, TSOP48

Hynix

10031: ¥58.46644Gbit+70 °CSerial25000ns854232610.002188:-:512M x 8bit:Flash - NAND:2.7V:48:TSOP3.6 V8bit12.12mm1.03mm18.5mmSurface MountTSOP-1NAND18.5 x 12.12 x 1.03mm48512MSymmetrical:SMD512M x 8 bit2.7 V-
H27U518S2CTP-BC
H27U518S2CTP-BC

H27U518S2CTP-BC Flash Memory 512Mbit, 64M x 8 bit, 12000ns, Maximum of 3.3V, 48-Pin, TSOP

Hynix

101: ¥19.176512Mbit+70 °C-12000ns--------3.3 V8bit18.4mm1mm12mmSurface MountTSOPSLC12 x 18.4 x 1mm4864MSymmetrical-64M x 8 bit--
HY27UF082G2A-TPCB
HY27UF082G2A-TPCB

HY27UF082G2A-TPCB, Serial Flash Memory 2Gbit, 256M x 8 bit, 25000ns, 2.7V, 48-Pin, TSOP-1

Hynix

15221: ¥26.5882Gbit+70 °CSerial25000ns--------3.6 V8bit12.12mm1.03mm18.5mmSurface MountTSOP-1NAND18.5 x 12.12 x 1.03mm48256MSymmetrical-256M x 8 bit2.7 V-
H27U518S2CTR-BC
H27U518S2CTR-BC

MEMORY, FLASH, NAND, 512MB, 48TSOP

HYNIX SEMICONDUCTOR

101: ¥25.568:512Mbit:0°C--854232610.002188:-:64M x 8bit:Flash - NAND:2.7V:48:TSOP------------:SMD---
H27UAG8T2ATR-BC
H27UAG8T2ATR-BC

MEMORY, FLASH, NAND, 16GB, 48TSOP

HYNIX SEMICONDUCTOR

-:16Gbit:0°C:TTL / CMOS-854232610.002188:-:2G x 8bit:Flash - NAND:2.7V:48:TSOP------------:SMD---
H27U4G8F2DTR-BC
H27U4G8F2DTR-BC

FLASH, NAND, 4GB (X8), 48TSOP

HYNIX SEMICONDUCTOR

10960: ¥18.5715:4Gbit:0°C:-:30ns854232610.002188:MSL 3 - 168 hours:512M x 8bit:Flash - NAND:2.7V:48:TSOP-1----------------
H27UAG8T2BTR-BC
H27UAG8T2BTR-BC

FLASH, NAND 16GB (X8), TSOP

HYNIX SEMICONDUCTOR

101: ¥62.288:16Gbit:0°C:-:20ns854232610.002188:MSL 3 - 168 hours:2G x 8bit:Flash - NAND:2.7V:48:TSOP-1----------------
HY27UF082G2B-TPCB
HY27UF082G2B-TPCB

IC, MEMORY, 2GB FLASH NAND, 48TSOP

HYNIX SEMICONDUCTOR

101: ¥46.988:2GB:0°C:-:20ns854232610.002188:-:256M x 8bit:Flash - NAND:2.7V:48:TSOP------------:SMD---
H27U518SCTR-BC
H27U518SCTR-BC

MEMORY, FLASH, NAND, 512MB, 48TSOP

HYNIX SEMICONDUCTOR

-----854232610.002188:MSL 1 - Unlimited---------------------
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