Infineon Technologies AG- Discrete Semiconductors

Infineon Technologies AG was founded on May 1, 1999, when the semiconductor division of Siemens was spun off and renamed, with its headquarters in Munich, Germany. The company is a global leader in semiconductor solutions, focusing on automotive, industrial, and communication applications. Its core product lines include power semiconductors such as CoolMOS, OptiMOS, CoolSiC, and CoolGaN families, microcontrollers like the AURIX, TRAVEO, and XMC series, a broad range of sensors (magnetic, pressure, radar), and security chips including the SLE 78 and OPTIGA families. Infineon addresses three central challenges of modern society: energy efficiency, mobility, and security. With a strong manufacturing footprint, the company operates fabs and R&D centers across Europe, Asia, and the Americas. It holds a leading market position, being the number one automotive semiconductor supplier and a top player in power discretes and modules. The corporate motto is 'Never stop thinking,' reflecting a culture of continuous innovation. In China, Infineon previously invested in Qimonda for memory production and works with numerous distributors. By combining advanced process technologies and system-level expertise, Infineon enables smarter and greener electronic systems.

Discrete Semiconductors - 型号列表

270 parts in total

Mfr Part #	Quantity Available	Price	Standard Package	RoHS	Packaging	Mounting Type	Package / Case	Power - Max	Rds On (Max) @ Id, Vgs	Operating Temperature	FET Type	FET Feature	Transistor Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25degC	Supplier Device Package	Part # Aliases	Power - Rated	Delay to 1st Tap	Vce(on) (Max) @ Vge, Ic	Mounting Style	Configuration	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Series	Product Category	Factory Pack Quantity	Fall Time	Vgs (Max)	Rise Time (Typ)	Voltage - Gate Trigger (Vgt) (Max)	Tradename	MOQ	Unit Pack	Automotive	Leadfree Defin	Power (Watts) - Per Port	Voltage - Supply (Vcc/Vdd)	Matchcode	Standard Leadtime	Number of Pins	Other Names	Logic Type	Thermal Resistance @ GPM	Tariff No	Current Rating (Max)	Resistance - RDS(On)	Weight	Material Finish	Technology	Voltage - Threshold	Width	Height	Length	Number of Elements	Voltage - Breakdown	On-State Resistance (Max)	Switch Time (Ton, Toff) (Max)	Current - Peak Pulse (10/1000us)	Package Cooled	Size / Dimension	Number of Positions	Channel Type	Card Standard	Current Transfer Ratio (Min)	Mechanical Life	Gate Charge	Voltage - Supply	Power - Average Forward	Manufacturer	Contact Voltage (Max)	Termination	DC Resistance (DCR) - Primary	Gain	Frequency	Frequency - Max	Frequency - Transition	Noise Figure (dB Typ @ f)	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Type	Delay Time - ON	Output Function	Delay Time - OFF	Number of Channels	Resistance - Input	Package Quantity	Function
3 IPA60R520CP MOSFET COOL MOS PWR TRANS MAX 650V MOSFET N-CH 650V 6.8A TO220-3 MOSFET, N, TO-220 Infineon Technologies	55486	1: ¥9.452	500	RoHS Compliant	Tube	Through Hole	TO-220FP	30W	0.52 Ohms	+ 150 C	MOSFET N-Channel, Metal Oxide	Standard	N-Channel	3.5V @ 250µA	600V	6.8 A	630pF @ 100V	6.8A (Tc)	PG-TO-220-FP	IPA60R520CPXK IPA60R520CPXKSA1 SP000405856	30 W	74 ns	600 V	Through Hole	Single	31nC @ 10V	:30W	IPA60R520	MOSFET	500	16 ns	:10V	12 ns	+/- 20 V	CoolMOS	-	-	-	-	-	-	-	-	:3	-	-	-	85412900	:6.8A	:520mohm	0.00195	:-	-	:3V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	24 nC	-	-	-	:650V	:Through Hole	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 BSZ035N03LS G MOSFET 30.0V3.5mOhm 5.7mOhm N CHANNEL MOSFET MOSFET N-CH 30V 40A TSDSON-8 MOSFET N-Channel 30V 40A TSDSON8 MOSFET, N CH, 53A, 30V, PG-TSDSON-8 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 Infineon Technologies	5210	1: ¥5.576	5,000	RoHS Compliant	Reel	Surface Mount	TSDSON-8	69W	0.0035 Ohms	+ 150 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2.2V @ 250µA	30V	40 A	4400pF @ 15V	20A (Ta), 40A (Tc)	PG-TSDSON-8 (3.3x3.3)	BSZ035N03LSGATMA1 BSZ035N03LSGXT SP000278809	2.1 W	30 ns	30 V	SMD/SMT	Single Quad Drain Triple Source	56nC @ 10V	69 W	BSZ035N03	MOSFET	-	5 ns	±20 V	5.4 ns	+/- 20 V	OptiMOS	-	-	-	-	-	-	-	-	:8	BSZ035N03LSGINCT	-	-	85412900	:40A	:2.9mohm	0.002	:MSL 1 - Unlimited	-	:1V	3.4mm	1.1mm	3.4mm	1	30 V	5.7 mΩ	7.8 ns	40 A	PG-TSDSON-8	3.4 x 3.4 x 1.1mm	8	Enhancement	DC/DC Converter, SMPS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 BSC025N03MS G MOSFET OptiMOS 3 M-Series PWR-MOSFET 30V 100A N-CH 30V 100A 2.5mOhm TDSON-8 MOSFET N-CH 30V 100A TDSON-8 MOSFET N-Channel 30V 100A TSDSON8 MOSFET, N CH, 100A, 30V, PG-TDSON-8 Infineon N沟道 MOSFET 晶体管 , 100 A, Vds=30 V, 8针 TDSON封装 MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M Infineon Technologies	8251	1: ¥6.46	5,000	RoHS Compliant	Reel	SMD	TSDSON-8	83W	0.0025 Ohms	+ 150 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2V @ 250µA	30V	23 A	7600pF @ 15V	23A (Ta). 100A (Tc)	PG-TDSON-8 (5.15x6.15)	BSC025N03MSGATMA1 BSC025N03MSGXT SP000311505	2.5 W	29 ns	30 V	SMD/SMT	Single Quad Drain Triple Source	36nC	83 W	BSC025N03	MOSFET	-	11 ns	±20 V	11 ns	+/- 16 V	OptiMOS	5000	5000	NO	RoHS-conform	83W	30V	BSC025N03MS G	21 weeks	:8	BSC025N03MSGINCT	YES	1.5K/W	85412900	:100A	:2.1mohm	0.002	:MSL 1 - Unlimited	OptiMOS	:1V	6.1mm	1.1mm	5.35mm	1	30 V	3 mΩ	22 ns	100 A	PG-TDSON-8	5.35 x 6.1 x 1.1mm	8	Enhancement	5 V Driver, SMPS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 BSC019N04NS G MOSFET OptiMOS 3 PWR TRANST 40V 100A MOSFET 40V 100A 1.9mOHM SSO8 MOSFET N-CH 40V 100A TDSON-8 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 Infineon Technologies	6315	1: ¥7.548	5,000	RoHS Compliant	Reel	SMD	TDSON	125W	0.0019 Ohms	+ 150 C	MOSFET N-Channel, Metal Oxide	Standard	N-Channel	4V @ 85µA	40V	29 A	8800pF @ 20V	30A (Ta), 100A (Tc)	PG-TDSON-8 (5.15x6.15)	BSC019N04NSGATMA1 BSC019N04NSGXT SP000388299	2.5 W	33 ns	40 V	SMD/SMT	Single Quad Drain Triple Source	84nC	-	BSC019N04	MOSFET	5000	6.6 ns	-	5.6 ns	+/- 20 V	OptiMOS	5000	5000	NO	RoHS-conform	125W	40V	BSC019N04NS G	21 weeks	-	BSC019N04NS GCT	NO	1K/W	-	-	-	-	-	OptiMOS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 IPB080N03L G MOSFET OptiMOS 3 PWR TRANS 30V 50A N-CH 30V 50A 8mOhm TO263-3 MOSFET N-CH 30V 50A TO263-3 MOSFET, N CH, 50A, 30V, PG-TO263-3 MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 Infineon Technologies	1873	1: ¥5.644	1,000	RoHS Compliant	Reel	SMD	TO-263	47W	0.008 Ohms	+ 175 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2.2V @ 250µA	30V	50 A	1900pF @ 15V	50A	PG-TO263-2	IPB080N03LGATMA1 IPB080N03LGXT SP000304104	47 W	18 ns	30 V	SMD/SMT	Single	8.7nC	:47W	IPB080N03	MOSFET	1000	2.8 ns	:10V	3.6 ns	+/- 20 V	OptiMOS	1000	1000	NO	RoHS-conform	47W	30V	IPB080N03L G	13 weeks	:3	IPB080N03L GCT	YES	3.2K/W	85412900	:50A	:6.7mohm	0.002	:MSL 1 - Unlimited	-	:1V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 IPB06N03LA G MOSFET N-CH 25V 50A MOSFET N-CH 25V 50A D2PAK Infineon Technologies	10	1: ¥11.764	1,000	RoHS Compliant	Reel	Surface Mount	TO-263	83W	9.5 mOhms	+ 175 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2V @ 40µA	25V	50 A	2653pF @ 15V	50A (Tc)	PG-TO263-3	-	83 W	30 ns	25 V	SMD/SMT	Single	22nC @ 5V	-	-	MOSFET	1000	4.4 ns	-	30 ns	+/- 20 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	58 S / 29 S	End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.	-	-	-	-	-	-	58 S / 29 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BFP 740F H6327 Transistors RF Silicon Germanium RF BIP TRANSISTOR TRANS RF NPN 42GHZ 4.7V SOT343 Transistors RF Bipolar RF BIP TRANSISTOR RF Bipolar Transistors RF BIP TRANSISTOR Infineon Technologies	1509	1: ¥3.332	3,000	RoHS Compliant	Reel	Surface Mount	TSFP-4	160mW	-	+ 150 C	-	-	NPN	-	-	-	-	-	4-TSFP	BFP740FH6327XT BFP740FH6327XTSA1 SP000750416	160 mW	-	13 V	SMD/SMT	-	-	-	BFP740	Transistors RF Silicon Germanium	3000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SiGe	-	0.8 mm	0.55 mm	1.4 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	4 V	160 mW	Infineon Technologies	-	-	-	27.5dB	42 GHz	42 GHz	42GHz	0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz	1.2 V	30mA	30 mA	400	RF Silicon Germanium	-	-	-	-	-	-	-
5 IPP041N04N G MOSFET OptiMOS 3 Power TRANSITOR 40V 80A N-CH 40V 80A 4mOhm TO220-3 MOSFET N-CH 40V 80A TO220-3 MOSFET, N CH, 80A, 40V, PG-TO220-3 Infineon , N沟道 MOSFET, 80 A, Vds=40 V, 3针 TO-220封装 MOSFET N-Ch 40V 80A TO220-3 OptiMOS 3 Infineon Technologies	30	1: ¥5.048	500	RoHS Compliant	Tube	THT	TO-220	94W	0.0041 Ohms	+ 175 C	MOSFET N-Channel, Metal Oxide	Standard	N-Channel	4V @ 45µA	40V	80 A	4500pF @ 20V	80A (Tc)	PG-TO220-3	IPP041N04NGHKSA1 IPP041N04NGXKSA1 SP000680790	94 W	23 ns	40 V	Through Hole	Single	42nC	:94W	IPP041N04	MOSFET	500	4.8 ns	:10V	3.8 ns	+/- 20 V	OptiMOS	500	500	NO	RoHS-conform	94W	40V	IPP041N04N G	1 week	:3	-	NO	1.6K/W	85412900	:80A	:3.3mohm	0.002	:-	-	:2V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 BTS110 E3045A MOSFET N-Channel 100V TEMPFET N-CH 100V 10A 200mOhm TO263-3 _NO ROHS MOSFET N-CH 100V 10A TO-220 Infineon Technologies	10	650: ¥28.356	1,000	No	Reel	Surface Mount	TO-220AB SMD	40W	200 mOhms	+ 150 C	MOSFET N-Channel, Metal Oxide	Standard	N-Channel	3.5V @ 1mA	100V	10 A	600pF @ 25V	10A (Tc)	TO-220AB	BTS110E3045ANT BTS110E3045ANTMA1 SP000011183	40000 mW	70 ns	100 V	Through Hole	Single	-	-	-	-	1000	-	-	-	-	-	1000	1000	NO	Leaded	40W	100V	BTS110 E3045A	18 weeks	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NRND: Not recommended for new designs.	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 BTS113A E3064 MOSFET N-Channel 60V TEMPFET MOSFET N-CH 60V 11.5A TO-220AB Infineon Technologies	10	245: ¥29.376	500	No	Tube	Through Hole	TO-220AB SMD	40W	170 mOhms at 4.5 V	+ 150 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2.5V @ 1mA	60V	11.5 A	560pF @ 25V	11.5A (Tc)	P-TO220AB	BTS113AE3064NK BTS113AE3064NKSA1 SP000011189	40000 mW	45 ns	60 V	Through Hole	Single	-	-	-	-	500	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NRND: Not recommended for new designs.	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 BTS113A E3045A MOSFET N-Channel 60V TEMPFET N-CH 55V 15A 170mOhm TO263 _NO ROHS MOSFET N-CH 60V 11.5A TO-220AB Infineon Technologies	10	490: ¥29.376	1,000	No	Reel	SMD	TO-220AB SMD	40W	170 mOhms at 4.5 V	+ 150 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2.5V @ 1mA	60V	11.5 A	560pF @ 25V	11.5A (Tc)	TO-220AB	BTS113AE3045ANT BTS113AE3045ANTMA1 SP000011188	40000 mW	45 ns	60 V	Through Hole	Single	n.s.nC	-	-	-	1000	-	-	-	-	-	1000	1000	AEC-Q(100)	Leaded	40W	60V	BTS113A E3045A	18 weeks	-	-	YES	3.1K/W	-	-	-	-	-	TempFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NRND: Not recommended for new designs.	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD70P04P4-09 LED DRVR 9V/12V/15V/18V/24V 36-Pin DSO MOSFET -40V 8.9mOHM AECQ TO252 MOSFET P-Channel -40V MOSFET MOSFET P-Ch -40V -73A DPAK-2 OptiMOS-P2 infineon technologies	10	1520: ¥3.6448	Tape & Reel	RoHS Compliant	Reel	SMD	36DSO	-	n.s.Ohm	-	-	-	-	-	-	-73A	-	-	-	IPD70P04P409ATMA1 SP000709326	-	-	-	-	-	70nC	3000 mW	IPD70P04	-	-	-	-	-	-	-	2500	2500	AEC-Q(100)	RoHS-conform	75W	-40V	IPD70P04P4-09	22 weeks	-	-	NO	2K/W	-	-	-	-	-	OptiMOS P2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	5.5 to 32 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 BUZ31 H MOSFET N-Channel 200V Transistor MOSFET N-CH 200V 14.5A TO220-3 MOSFET N-Channel 200V 14.5A TO220 Infineon Technologies	354	1: ¥12.92	500	Compliant	Tube	Through Hole	TO-220-3	95W	200 mOhm @ 9A, 5V	+150 °C	MOSFET N-Channel, Metal Oxide	Standard	N-Channel	4V @ 1mA	200V	14.5 A	1120pF @ 25V	14.5A (Tc)	PG-TO220-3	BUZ31HXKSA1 SP000682992	95 W	150 ns	200 V	Through Hole	Single	-	95 W	BUZ31	-	-	60 nS	±20 V	50 nS	+/- 20 V	OptiMOS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4.57mm	9.45mm	10.36mm	1	200 V	0.2 Ω	12 ns	14.5 A	PG-TO-220-3	10.36 x 4.57 x 9.45mm	3	Enhancement	Power MOSFET	12 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 BSC320N20NS3 G MOSFET N-KANAL POWER MOS MOSFET 200V 32mOhm 36A SSO-8 MOSFET N-CH 200V 36A TDSON-8 MOSFET N-Channel 200V 36A TDSON8 Infineon , N沟道 MOSFET, 36 A, Vds=200 V, 8针 TDSON封装 MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 Infineon Technologies	4980	1: ¥27.5264	5,000	Lead free / RoHS Compliant	Tape & Reel (TR)	SMD	TDSON-8	125W	n.s.Ohm	+150 °C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	4V @ 90µA	200V	36A	2350pF @ 100V	36A (Tc)	PG-TDSON-8 (5.15x6.15)	BSC320N20NS3GATMA1 SP000676410	125 W	22 ns	200 V	SMD/SMT	Quad Drain, Single Gate, Triple Source	22nC	125 W	BSC320N20	MOSFET	5000	4 ns	±20 V	9 ns	20 V	OptiMOS	1	5000	NO	RoHS-conform	125W	200V	BSC320N20NS3 G	21 weeks	-	BSC320N20NS3 GCT	NO	1K/W	-	-	-	-	-	OptiMOS	-	6.1mm	1.1mm	5.35mm	1	200 V	32 mΩ	14 ns	36 A	PG-TDSON-8	5.35 x 6.1 x 1.1mm	8	Enhancement	High Frequency Switching, Synchronous Rectification	58 S, 29 S	-	22 nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 BSC057N03LS G MOSFET OptiMOS 3 N-CH 30V 71A 5.7mOhms MOSFET N-CH 30V 71A TDSON-8 MOSFET, N CH, 71A, 30V, PG-TDSON-8 MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 Infineon Technologies	7818	1: ¥4.896	5,000	Lead free / RoHS Compliant	Tape & Reel (TR)	Surface Mount	8-PowerTDFN	45W	5.7 mOhm @ 30A, 10V	:-55°C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	:N Channel	2.2V @ 250µA	30V	-	2400pF @ 15V	17A (Ta), 71A (Tc)	PG-TDSON-8 (5.15x6.15)	-	-	-	-	-	-	30nC @ 10V	:45W	-	-	-	-	:10V	-	-	-	-	-	-	-	-	-	-	-	:8	BSC057N03LSGINCT	-	-	85412900	:71A	:4.8mohm	0.002	:MSL 1 - Unlimited	-	:1V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 BSZ040N04LS G MOSFET OptiMOS 3 PWR TRANS 40V 40A N-CH 40V 40A 4.0mOhm S3O8 MOSFET N-CH 40V 40A TSDSON-8 MOSFET N-Channel 40V 18A TSDSON8 Infineon OptiMOS 3 系列 Si N沟道 MOSFET , 40 A, Vds=40 V, 8针 TSDSON封装 MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 Infineon Technologies	599	541: ¥3.7128	5,000	Lead free / RoHS Compliant	Tape & Reel (TR)	SMD	TSDSON-8	69W	0.0056Ohm	+150 °C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	-	2V @ 36µA	40V	40A	5100pF @ 20V	18A (Ta), 40A (Tc)	PG-TSDSON-8 (3.3x3.3)	-	-	33 ns	-	-	Quad Drain, Single Gate, Triple Source	31nC	69 W	-	-	-	-	±20 V	-	-	-	5000	5000	NO	RoHS-conform	69W	40V	BSZ040N04LS G	22 weeks	-	BSZ040N04LSGINCT	YES	1.8K/W	-	-	-	-	-	OptiMOS	-	3.4mm	1.1mm	3.4mm	1	40 V	5.6 mΩ	8.5 ns	40 A	PG-TSDSON-8	3.4 x 3.4 x 1.1mm	8	Enhancement	DC/DC Converter, SMPS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 IPP072N10N3 G MOSFET N-KANAL POWER MOS MOSFET N-CH 100V 80A TO220-3 MOSFET N-Channel 100V 80A OptiMOS3 TO220 Infineon , N沟道 MOSFET, 80 A, Vds=100 V, 3针 TO-220封装 MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 Infineon Technologies	746	1: ¥10.676	500	Compliant	Tube	Through Hole	TO-220-3	150W	7.2 mOhm @ 80A, 10V	+175 °C	MOSFET N-Channel, Metal Oxide	Standard	N-Channel	3.5V @ 90µA	100V	80 A	4910pF @ 50V	80A (Tc)	TO-220-3	IPP072N10N3GXKSA1 SP000680830	150 W	37 ns	100 V	Through Hole	Single	68nC @ 10V	150 W	IPP072N10	MOSFET	500	9 ns	±20 V	37 ns	+/- 20 V	OptiMOS	-	-	-	-	-	-	-	-	3	-	-	-	-	-	-	-	-	Si	-	15.95mm	4.57mm	10.36mm	1	100 V	7.2 mΩ	19 ns	80 A	PG-TO-220-3	10.36 x 15.95 x 4.57mm	3	Enhancement	High Frequency Switching, Synchronous Rectification	50 S	-	68 nC	100 V	150 W	Infineon Technologies	-	-	-	-	-	-	-	-	-	-	-	-	-	19 ns	增强	37 ns	1 Channel	7.2 mΩ	TO-220	Y
5 IPD036N04L G MOSFET OptiMOS 3 PWR TRANS 40V 90A N-CH 40V 90A 4mOhm TO252-3 MOSFET N-CH 40V 90A TO252-3 MOSFET, N CH, 90A, 40V, PG-TO252-3 Infineon OptiMOS 3 系列 Si N沟道 MOSFET , 90 A, Vds=40 V, 3针 TO-252封装 MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3 Infineon Technologies	520	1: ¥6.936	2,500	Lead free / RoHS Compliant	Tape & Reel (TR)	SMD	TO252-3	94W	0.0049Ohm	+ 175 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2V @ 45µA	40V	90A	6300pF @ 20V	90A	PG-TO252-3	IPD036N04LGBTMA1 SP000387945	94 W	37 ns	40 V	SMD/SMT	Single	78nC	:94W	IPD036N04	MOSFET	2500	6 ns	:10V	5.4 ns	+/- 20 V	OptiMOS	2500	2500	NO	RoHS-conform	94W	40V	IPD036N04L G	14 weeks	:3	IPD036N04L GCT	YES	1.6K/W	85412900	:90A	:3mohm	0.002	:MSL 1 - Unlimited	OptiMOS	:1.2V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 IPB055N03L G MOSFET OptiMOS 3 PWR TRANS 30V 50A MOSFET N-CH 30V 50A TO-263-3 MOSFET, N CH, 50A, 30V, PG-TO263-3 Infineon OptiMOS 3 系列 Si N沟道 MOSFET , 50 A, Vds=30 V, 2针+焊片 PG-TO-263-3封装 MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 Infineon Technologies	859	1: ¥6.936	1,000	Lead free / RoHS Compliant	Tape & Reel (TR)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	68W	5.5 mOhm @ 30A, 10V	+ 175 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2.2V @ 250µA	30V	50 A	3200pF @ 15V	50A (Tc)	PG-TO263-2	IPB055N03LGATMA1 SP000304110	68 W	25 ns	30 V	SMD/SMT	Single	31nC @ 10V	:68W	IPB055N03	MOSFET	1000	4 ns	:10V	5.2 ns	+/- 20 V	OptiMOS	-	-	-	-	-	-	-	-	:3	IPB055N03LGINDKR	-	-	85412900	:50A	:4.6mohm	0.002	:MSL 1 - Unlimited	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 BSZ130N03MS G MOSFET OptiMOS 3 M-Series N-CH 30V 35A 13mOhm S3O8 MOSFET N-CH 30V 35A TSDSON-8 MOSFET, N CH, 35A, 30V, PG-TSDSON-8 MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3M Infineon Technologies	5186	1: ¥4.012	5,000	Lead free / RoHS Compliant	Tape & Reel (TR)	SMD	TSDSON-8	25W	0.017Ohm	- 55 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2V @ 250µA	30V	35A	1300pF @ 15V	9A (Ta), 35A (Tc)	-	BSZ130N03MSGATMA1 SP000313122	2.1 W	13 ns	30 V	SMD/SMT	Single Quad Drain Triple Source	6.1nC	:25W	BSZ130N03	MOSFET	-	2 ns	:10V	2.2 ns	+/- 20 V	OptiMOS	5000	5000	NO	RoHS-conform	25W	30V	BSZ130N03MS G	21 weeks	:8	BSZ130N03MSGINCT	YES	5K/W	85412900	:35A	:9.2mohm	0.002	:MSL 1 - Unlimited	-	:1V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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Infineon Technologies AG- Discrete Semiconductors

Discrete Semiconductors - 型号列表

Part # Aliases

Rds On (Max) @ Id, Vgs

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Current - Continuous Drain (Id) @ 25degC

Current - Drain (Idss) @ Vds (Vgs=0)

Series

Power - Max

Delay to 1st Tap

Vgs(th) (Max) @ Id

Package / Case

Fall Time

Power - Rated

Rise Time (Typ)

Power Dissipation (Max)

Supplier Device Package

Matchcode

Other Names

Resistance - RDS(On)

Current Rating (Max)

Vce(on) (Max) @ Vge, Ic

Power (Watts) - Per Port

Thermal Resistance @ GPM

Drain to Source Voltage (Vdss)

Standard Package

Operating Temperature

On-State Resistance (Max)

Switch Time (Ton, Toff) (Max)

Voltage - Supply (Vcc/Vdd)

Standard Leadtime

Factory Pack Quantity

Current - Peak Pulse (10/1000us)

Width

MOQ

Technology

RoHS

Voltage - Threshold

Mounting Type

Voltage - Breakdown

Height

Length

Size / Dimension

Card Standard

Unit Pack

Current Transfer Ratio (Min)

Gate Charge

Transistor Type

Voltage - Gate Trigger (Vgt) (Max)

Packaging

Number of Pins

Configuration

Package Cooled

Voltage - Supply

Tradename

Product Category

Vgs (Max)

FET Feature

Weight

Mounting Style

Material Finish

Number of Positions

Automotive

Leadfree Defin

Logic Type

Mechanical Life

Power - Average Forward