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Infineon Technologies AG

Infineon Technologies AG- Bipolar Transistors - General

Infineon Technologies AG was founded on May 1, 1999, when the semiconductor division of Siemens was spun off and renamed, with its headquarters in Munich, Germany. The company is a global leader in semiconductor solutions, focusing on automotive, industrial, and communication applications. Its core product lines include power semiconductors such as CoolMOS, OptiMOS, CoolSiC, and CoolGaN families, microcontrollers like the AURIX, TRAVEO, and XMC series, a broad range of sensors (magnetic, pressure, radar), and security chips including the SLE 78 and OPTIGA families. Infineon addresses three central challenges of modern society: energy efficiency, mobility, and security. With a strong manufacturing footprint, the company operates fabs and R&D centers across Europe, Asia, and the Americas. It holds a leading market position, being the number one automotive semiconductor supplier and a top player in power discretes and modules. The corporate motto is 'Never stop thinking,' reflecting a culture of continuous innovation. In China, Infineon previously invested in Qimonda for memory production and works with numerous distributors. By combining advanced process technologies and system-level expertise, Infineon enables smarter and greener electronic systems.

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Bipolar Transistors - General - 型号列表

1,719 parts in total

DC Current Gain (hFE) (Min) @ Ic, Vce

Part # Aliases

Voltage - Supply

Current - Collector Cutoff (Max)

Other Names

Current - Collector (Ic) (Max)

Package / Case

Series

Standard Package

Factory Pack Quantity

Power - Max

Frequency - Transition

Vce Saturation (Max) @ Ib, Ic

Vce(on) (Max) @ Vge, Ic

Supplier Device Package

Gain Bandwidth Product

Power Dissipation (Max)

Product Category

Resistor Matching Ratio

Configuration

Operating Temperature

Vce Saturation (Max)

Transistor Type

Resistor - Base (R1)

Packaging

Gain

Noise Figure (dB Typ @ f)

Frequency - Max

Voltage - Input (Min)

Type

Power - Average Forward

Width

Height

Mfr Part #Quantity AvailablePriceDC Current Gain (hFE) (Min) @ Ic, VceMounting TypeStandard PackagePackagingPackage / CaseProduct CategoryRoHSFactory Pack QuantityPower - MaxTransistor TypeVoltage - SupplyFrequency - TransitionVce Saturation (Max) @ Ib, IcCurrent - Collector (Ic) (Max)Supplier Device PackageOperating TemperatureCurrent - Collector Cutoff (Max)Part # AliasesConfigurationMounting StylePower Dissipation (Max)Vce(on) (Max) @ Vge, IcOther NamesSeriesGain Bandwidth ProductMechanical LifeWidthManufacturerVce Saturation (Max)TypePower - Average ForwardHeightLengthResistor Matching RatioFrequency - MaxVoltage - Input (Min)Number of PositionsResistor - Base (R1)Resistor - Emitter Base (R2)Current - Collector Pulsed (Icm)GainNoise Figure (dB Typ @ f)Standard Package NameEU RoHSLead StylePackage QuantityNumber of ElementsVoltage - Supply (Max)FrequencyPower - RatedTechnologyLength - OverallShell Size - InsertPrinted Circuit Board
BCR 198S E6327
BCR 198S E6327

Transistors Switching - Resistor Biased PNP Silicon Digital TRANSISTOR TRANS PREBIAS DUAL PNP SOT363

Infineon Technologies

-70Surface Mount3,000ReelSOT-363-6Transistors Switching - Resistor BiasedRoHS Compliant18000250mWPNP50 V190MHz300mV @ 500µA, 10mA100mAPG-SOT363-6+ 150 C-BCR198SE6327XTDualSMD/SMT-----Obsolete-------1---47 KOhms47k100 mA--------------
BFG 196 E6327
BFG 196 E6327

Transistors Bipolar - BJT NPN Silicon RF TRANSISTOR TRANSISTOR RF NPN 12V SOT-223

Infineon Technologies

-70 at 50 mA at 8 VSurface Mount2,000ReelSOT-223-4Transistors Bipolar - BJTRoHS Compliant1000800mWNPN12 V7.5GHz2 V150mAPG-SOT223-4+ 150 C0.15 A-SingleSMD/SMT800 mW20 V--7500 MHzObsolete--------------9dB ~ 14.5dB1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz------------
BCP 56-10 H6433
BCP 56-10 H6433

Transistors Bipolar - BJT AF TRANSISTOR TRANS NPN AF 80V 1A SOT223

Infineon Technologies

-63 @ 150mA, 2VSurface Mount4,000ReelTO-261-4, TO-261AATransistors Bipolar - BJTRoHS Compliant40002WNPN80V100MHz500mV @ 50mA, 500mA1APG-SOT223-4--BCP5610H6433XT----SP000748368--Obsolete----------------------------
BCX 56-16 E6327
BCX 56-16 E6327

Transistors Bipolar - BJT NPN Silicon AF TRANSISTOR TRANSISTOR NPN AF 80V SOT-89

Infineon Technologies

50001000: ¥0.856825Surface Mount1,000ReelSOT-89Transistors Bipolar - BJTRoHS Compliant10002WNPN80 V100MHz5 V1APG-SOT89-4+ 150 C1 ABCX5616E6327HTSA1 BCX5616E6327XT SP000010913SingleSMD/SMT1000 mW100 VBCX 56-16 E6327CTBCX56100 MHz---5 V-------------------------
BC847CE6327XT
BC847CE6327XT

Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R

infineon technologies

420001: ¥0.0748420@2mA@5VSurface MountCut Tape-3SOT-23-----------65 to 150 °C0.1 A---330 mW50 V-------NPN----250(Typ) MHz45 V3-----------------
MMBT 2222A LT1
4
MMBT 2222A LT1

Transistors Bipolar - BJT AF TRANS GP BJT NPN 40V 0.6A TRANSISTOR SWITCHING NPN SOT-23 Bipolar Transistors - BJT AF TRANS GP BJT NPN 40V 0.6A

Infineon Technologies

4793421: ¥3.12835 at 100 uA at 10 VSurface Mount3,000ReelSOT-23Transistors Bipolar - BJTRoHS Compliant45000330mWNPN40 V300MHz6 V600mAPG-SOT23-3+ 150 C0.6 AMMBT2222ALT1HTSA1 MMBT2222ALT1XT SP000011174SingleSMD/SMT330 mW75 VMMBT2222ALT1INDKRMMBT2222300 MHz-1.3 mmInfineon Technologies1 V-330 mW1 mm2.9 mm---------------------
MMBT 3904 LT1
4
MMBT 3904 LT1

Transistors Bipolar - BJT AF TRANS GP BJT NPN 40V 0.2A TRANSISTOR HI-VOLT NPN SOT-23 Bipolar Transistors - BJT AF TRANS GP BJT NPN 40V 0.2A

Infineon Technologies

300003000: ¥0.207540 at 100 uA at 1 VSurface Mount3,000ReelSOT-23Transistors Bipolar - BJTRoHS Compliant54000330mWNPN40 V300MHz6 V200mAPG-SOT23-3+ 150 C0.2 AMMBT3904LT1HTSA1 MMBT3904LT1XT SP000011671SingleSMD/SMT330 mW60 VMMBT3904LT1INDKRMMBT3904300 MHz-1.3 mmInfineon Technologies0.3 V-330 mW1 mm2.9 mm---------------------
BCX 51-16 E6327
BCX 51-16 E6327

Transistors Bipolar - BJT PNP Silicon AF TRANSISTOR TRANSISTOR PNP AF 45V SOT-89

Infineon Technologies

101000: ¥0.856825Surface Mount1,000ReelSOT-89Transistors Bipolar - BJTRoHS Compliant10002WPNP45 V125MHz5 V1APG-SOT89-4+ 150 C1 ABCX5116E6327HTSA1 BCX5116E6327XT SP000014827SingleSMD/SMT1000 mW45 VBCX 51-16 E6327CTBCX51125 MHz---5 V-------------------------
JANS2N6851U
JANS2N6851U

HEXFET, HI-REL, QPL, SPACE

Infineon Technologies AG

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OMD100LP
OMD100LP

QUAD MOSFET

Infineon Technologies AG

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OMD200LP
OMD200LP

QUAD MOSFET

Infineon Technologies AG

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BC847AE6327XT
BC847AE6327XT

Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R

infineon technologies

101: ¥0.253110@2mA@5VSurface MountTape & ReelTape and Reel3SOT-23-----------65 to 150 °C0.1 A---330 mW50 V-------NPN----250(Typ) MHz45 V3-----SOT-23CompliantGull-wingSOT-2316------
IRHNA57163SED/SLDC
IRHNA57163SED/SLDC

130V 750.000A HEXFET RADHARD

Infineon Technologies AG

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IRFM7150
IRFM7150

HEXFET, HI-REL

Infineon Technologies AG

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BCX 42 E6433
3
BCX 42 E6433

Transistors Bipolar - BJT NPN Silicn AF/SWITCH TRANSISTOR TRANSISTOR SW AF PNP SOT-23 Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR

Infineon Technologies

99981: ¥3.0625Surface Mount10,000ReelSOT-23Transistors Bipolar - BJTRoHS Compliant10000330mWPNP125 V150MHz5 V800mAPG-SOT23-3+ 150 C0.8 ABCX42E6433HTMA1 BCX42E6433XT SP000010902SingleSMD/SMT330 mW125 V-BCX42150 MHz-1.3 mmInfineon Technologies--330 mW1 mm (Max)2.9 mm---------------------
BCR 135 E6327
BCR 135 E6327

Transistors Switching - Resistor Biased NPN Silicon Digital TRANSISTOR TRANS PREBIAS NPN 200MW SOT23-3 TRANSISTOR NPN DGTL AF SOT-23 Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

Infineon Technologies

105: ¥0.93170Surface Mount3,000ReelSOT-23-3Transistors Switching - Resistor BiasedRoHS Compliant3000200mWNPN50 V150MHz300mV @ 500µA, 10mA100mAPG-SOT23-3+ 150 C100 mABCR135E6327HTSA1 BCR135E6327XT SP000010765SingleSMD/SMT--BCR 135 E6327CTBCR135--1.3 mmInfineon Technologies---1 mm2.9 mm0.21---10 KOhms47k100 mA--------------
BFP 520 H6327
2
BFP 520 H6327

Transistors RF Bipolar Small Signal RF BIP TRANSISTOR TRANS RF NPN 3.5V 40MA SOT343 Transistors RF Bipolar RF BIP TRANSISTOR RF Bipolar Transistors RF BIP TRANSISTOR

Infineon Technologies

60001: ¥2.99270 @ 20mA, 2VSurface Mount3,000ReelSC-82A, SOT-343Transistors RF Bipolar Small SignalRoHS Compliant3000100mWNPN3.5V45GHz1 V40mAPG-SOT343-4-50 mABFP520H6327XT BFP520H6327XTSA1 SP000745280Single Dual EmitterSMD/SMT--BFP 520 H6327CTBFP520---Infineon Technologies-RF Bipolar Small Signal125 mW---45 GHz-----22.5dB0.95dB @ 1.8GHz------45 GHz125 mWSi---
BCP 54-16 E6433
BCP 54-16 E6433

Transistors Bipolar - BJT NPN Silicon AF TRANSISTOR TRANSISTOR NPN AF 45V SOT-223

Infineon Technologies

40004000: ¥1.094125 at 5 mA at 2 V, 100 at 150 mA at 2 V, 25 at 500 mA at 2 VSurface Mount4,000ReelSOT-223-4Transistors Bipolar - BJTRoHS Compliant40002WNPN45 V100MHz5 V1APG-SOT223-4+ 150 C1 ABCP5416E6433HTMA1 BCP5416E6433XT SP000010717SingleSMD/SMT2000 mW45 VBCP 54-16 E6433CTBCP54100 MHz-----------------------------
BCR108B6327XT
BCR108B6327XT

Transistors Switching - Resistor Biased NPN Silicon Digital TRANSISTOR Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R

Infineon Technologies

1030000: ¥0.138770@5mA@5VSurface Mount-Reel-Transistors Switching - Resistor BiasedRoHS Compliant--------150100-Single-200----Obsolete1.3--NPN---0.047-503-----SOT-23CompliantGull-wingSOT-23-----2.91(Max)3
BDP 954 H6327
BDP 954 H6327

Transistors Bipolar - BJT AF TRANSISTOR TRANS PNP AF PWR 100V 3A SOT223

Infineon Technologies

-85 @ 500mA, 1VSurface Mount1,000ReelTO-261-4, TO-261AATransistors Bipolar - BJTRoHS Compliant10005WPNP100V100MHz500mV @ 200mA, 2A3APG-SOT223-4--BDP954H6327XT----SP000748528--Obsolete----------------------------
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