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Infineon Technologies AG

Infineon Technologies AG- High-Power Discrete Semiconductor Modules

Infineon Technologies AG was founded on May 1, 1999, when the semiconductor division of Siemens was spun off and renamed, with its headquarters in Munich, Germany. The company is a global leader in semiconductor solutions, focusing on automotive, industrial, and communication applications. Its core product lines include power semiconductors such as CoolMOS, OptiMOS, CoolSiC, and CoolGaN families, microcontrollers like the AURIX, TRAVEO, and XMC series, a broad range of sensors (magnetic, pressure, radar), and security chips including the SLE 78 and OPTIGA families. Infineon addresses three central challenges of modern society: energy efficiency, mobility, and security. With a strong manufacturing footprint, the company operates fabs and R&D centers across Europe, Asia, and the Americas. It holds a leading market position, being the number one automotive semiconductor supplier and a top player in power discretes and modules. The corporate motto is 'Never stop thinking,' reflecting a culture of continuous innovation. In China, Infineon previously invested in Qimonda for memory production and works with numerous distributors. By combining advanced process technologies and system-level expertise, Infineon enables smarter and greener electronic systems.

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High-Power Discrete Semiconductor Modules - 型号列表

2,038 parts in total

Voltage - Gate Trigger (Vgt) (Max)

Package / Case

Current - Breakover

Current Rating (Max)

Factory Pack Quantity

Voltage - Protection Rating (VPR)

Current - Leakage (IS(off)) (Max)

Current - Gate Trigger (Igt) (Max)

Current - Output

Current - Hold (Ih) (Max)

Mounting Style

Circuit Type

Product Category

RoHS

Type

Product

Voltage - Supply

Current - Continuous Drain (Id) @ 25degC

Configuration

Mfr Part #Quantity AvailablePriceMechanical LifeFactory Pack QuantityVoltage - Gate Trigger (Vgt) (Max)Operating TemperatureCurrent - Gate Trigger (Igt) (Max)Product CategoryRoHSMounting StylePackage / CaseCurrent - BreakoverCurrent Rating (Max)Current - Hold (Ih) (Max)Current - Leakage (IS(off)) (Max)Voltage - Protection Rating (VPR)Circuit TypeCurrent - OutputTypeProductVgs (Max)Voltage - SupplyCurrent - Continuous Drain (Id) @ 25degCConfigurationPower - RatedVce Saturation (Max)Gate Charge (Qg) (Max) @ VgsDelay Time
TT250N10KOF
TT250N10KOF

SCR Modules PHASE CONTROL THYRISTOR MODULE

Infineon Technologies

-Obsolete-2 V+ 125 C200 mA----8000 A261 A300 mA50 mA1 kVSCR-----------
T589N14TOF
T589N14TOF

SCR Modules 1.4KV 9.4KA

Infineon Technologies

-Obsolete32.2 V+ 125 C250 mA----9400 A795 A300 mA50 mA1400 VPCT-----------
T739N38TOF
T739N38TOF

SCR Modules 3.8KV 17KA

Infineon Technologies

-Obsolete22.5 V+ 125 C350 mA----17000 A1260 A350 mA150 mA3800 VPCT-----------
TZ530N34KOF
TZ530N34KOF

Discrete Semiconductor Modules 3200V 1500A SINGLE

Infineon Technologies

-Obsolete23200 V-250 mADiscrete Semiconductor ModulesNoScrewTZ530------1500 ARectifier Diode Module---------
TT46F06KGF
TT46F06KGF

SCR Modules

Infineon Technologies

-Obsolete-------------------------
T718N12TOF
T718N12TOF

SCR Modules 1.2KV 14.5KA

Infineon Technologies

-Obsolete61.5 V+ 125 C250 mA----14500 A955 A300 mA80 mA1200 VSCR-----------
DT500N10KOF
DT500N10KOF

Discrete Semiconductor Modules 1000V 900A

Infineon Technologies

-Obsolete41000 V--Discrete Semiconductor ModulesNoScrewDT500------900 ARectifier Diode Module---------
TD106N18KOF
TD106N18KOF

Discrete Semiconductor Modules 1800V 180A

Infineon Technologies

-Obsolete501800 V--Discrete Semiconductor ModulesNoSMD/SMTTD106------180 ARectifier Diode Module---------
TT46F10KDC
TT46F10KDC

SCR Modules

Infineon Technologies

-Obsolete-------------------------
T719N12TOF
T719N12TOF

Discrete Semiconductor Modules Thyr.Epoxi Sch. 57mm

Infineon Technologies

-Obsolete3---Discrete Semiconductor ModulesRoHS Compliant----------Thyristor Power Modules--------
FZ300R12KE3B1G
FZ300R12KE3B1G

IGBT Modules N-CH 1.2KV 480A

Infineon Technologies

-Obsolete10-+ 125 C---Screw62 mm--------IGBT Silicon Modules+/- 20 V1200 V480 ASingle Dual Collector Dual Emitter----
2PS16012E34G26571
2PS16012E34G26571

IGBT Modules 1x 717A AC at 400V AC Forced Air

Infineon Technologies

---------------------------
T1589N22TOF
T1589N22TOF

SCR Modules PHASE CONTROL THYRISTOR

Infineon Technologies

-Obsolete33 V+ 125 C300 mA----32000 A2040 A300 mA250 mA2200 VPCT-----------
FD400R16KF4
FD400R16KF4

IGBT Modules 1600V 400A CHOPPER

Infineon Technologies

261: ¥3,448.195Obsolete8-+ 125 C-IGBT ModulesNoSMD/SMTIHM130--------IGBT Silicon Modules+/- 20 V1600 V400 ASingle Dual Emitter Dual Collector3.1 KW3.7 V400 nA-
T2709N22TOF
T2709N22TOF

SCR Modules 2.2KV 54KA

Infineon Technologies

-Obsolete22 V+ 125 C250 mA--Press FitT-1102654000 A3700 A300 mA250 mA2200 VSCR-----------
TT131N16KOF
TT131N16KOF

Discrete Semiconductor Modules 1200V 220A DUAL

Infineon Technologies

101: ¥1,307.606Obsolete501600 V--Discrete Semiconductor ModulesNo--------220 ARectifier Diode Module--------3 uS
T459N22TOF
T459N22TOF

SCR Modules 2.2KV 10KA

Infineon Technologies

-Obsolete31.5 V+ 125 C250 mA----10000 A640 A200 mA80 mA2200 VPCT-----------
TD71F12KFC
TD71F12KFC

Discrete Semiconductor Modules 1200V 180A

Infineon Technologies

-Obsolete4---Discrete Semiconductor ModulesNoSMD/SMTTD71------180 ADiscrete Semiconductor Module---------
T210N07BOF
T210N07BOF

SCR Modules THYRISTOR

Infineon Technologies

-Obsolete-------------------------
D1049N18T
D1049N18T

Discrete Semiconductor Modules 1800V 2590A 57MM

Infineon Technologies

-Obsolete50---Discrete Semiconductor ModulesNoSMD/SMTD104-----------------
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