Infineon Technologies AG- IGBTs

Infineon Technologies AG was founded on May 1, 1999, when the semiconductor division of Siemens was spun off and renamed, with its headquarters in Munich, Germany. The company is a global leader in semiconductor solutions, focusing on automotive, industrial, and communication applications. Its core product lines include power semiconductors such as CoolMOS, OptiMOS, CoolSiC, and CoolGaN families, microcontrollers like the AURIX, TRAVEO, and XMC series, a broad range of sensors (magnetic, pressure, radar), and security chips including the SLE 78 and OPTIGA families. Infineon addresses three central challenges of modern society: energy efficiency, mobility, and security. With a strong manufacturing footprint, the company operates fabs and R&D centers across Europe, Asia, and the Americas. It holds a leading market position, being the number one automotive semiconductor supplier and a top player in power discretes and modules. The corporate motto is 'Never stop thinking,' reflecting a culture of continuous innovation. In China, Infineon previously invested in Qimonda for memory production and works with numerous distributors. By combining advanced process technologies and system-level expertise, Infineon enables smarter and greener electronic systems.

IGBTs - 型号列表

10,638 parts in total

Mfr Part #	Quantity Available	Price	Package / Case	RoHS	Packaging	Operating Temperature	Part # Aliases	Vce(on) (Max) @ Vge, Ic	Transistor Type	Mounting Style	Standard Package	Product Category	Current - Drain (Idss) @ Vds (Vgs=0)	Configuration	Voltage - Gate Trigger (Vgt) (Max)	Supplier Device Package	Power - Rated	Factory Pack Quantity	Rds On (Max) @ Id, Vgs	Mounting Type	Series	Power - Max	Mechanical Life	Gate Charge (Qg) (Max) @ Vgs	Delay to 1st Tap	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25degC	Frequency	FET Type	Fall Time	FET Feature	Rise Time (Typ)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gain	Other Names	Technology	Gate Charge	Output Power	Power - Output	Voltage - Test	Voltage Rating	Current - Output	MOQ	Tradename	Unit Pack	Automotive	Leadfree Defin	Logic Type	Power (Watts) - Per Port	Voltage - Supply (Vcc/Vdd)	Matchcode	Standard Leadtime	Thermal Resistance @ GPM	Voltage - Supply	Current - Collector (Ic) (Max)	Vgs (Max)	Current - Collector Cutoff (Max)	Current Transfer Ratio (Min)	Current Rating (Max)	Voltage - Breakdown	Power - Average Forward	Current - Peak Pulse (10/1000us)	Manufacturer	IGBT Type	Input Type	Switching Energy	Td (on/off) @ 25degC	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	Energy	Test Condition	DC Resistance (DCR) - Primary	Standard Package Name	EU RoHS	Number of Channels	Number of Elements	Power Dissipation (Max)	Propagation Delay (Max)	On-State Resistance (Max)	Switch Time (Ton, Toff) (Max)	Width	Height	Length	Lead Style	Length - Overall	Package Quantity	Number of Positions	Shell Size - Insert	Channel Type	Printed Circuit Board	Frequency - Transition	Noise Figure (dB Typ @ f)	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Type	Vce Saturation (Max)
IKU06N60R IGBT Transistors 600V Trenchstop RC Hard SW App, IGBT IGBT 600V 12A 100W TO251-3 Infineon Technologies	1500	479: ¥5.3264	TO-251-3 Short Leads, IPak, TO-251AA	RoHS Compliant	Tube	-	IKU06N60RBKMA1 IKU06N60RXK SP000623352	2.1V @ 15V, 6A	-	-	1,500	-	-	-	-	PG-TO251-3	-	-	-	Through Hole	TrenchStop®	100W	End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.	48nC	-	-	-	-	-	-	-	-	-	-	-	-	-	48nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	600V	12A	-	18A	-	-	-	-	-	-	Trench	Standard	330µJ	12ns/127ns	68ns	18A	330µJ	400V, 6A, 23 Ohm, 15V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PTFA142401ELV4R250 Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8 Infineon Technologies	-		H-33288-2	-	-	+ 150 C	FA142401ELV4R25XT PTFA142401ELV4R250XTMA1	65 V	N-Channel	SMD/SMT	-	Transistors RF MOSFET Power	2 A	Single	12 V	-	625 W	-	-	-	PTFA142401	-	-	-	-	-	-	1.45 GHz to 1.5 GHz	-	-	-	-	-	-	16.5 dB	-	-	-	50 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 PTFA211801E V5 Transistors RF MOSFET Power RF LDMOS FETs 180W 2110-2170 MHz FET RF LDMOS 180W H36260-2 Infineon Technologies	10	35: ¥907.8884	H-33288-6	Lead free / RoHS Compliant	Tray	+ 150 C	FA211801EV5XP PTFA211801EV5XWSA1 SP000841128	65 V	N-Channel	SMD/SMT	35	-	1.3 A	Single	10 V	H-36260-2	-	-	-	-	PTFA211801	-	-	-	-	-	-	2170 MHz	-	-	-	-	-	-	17.5 dB	-	-	-	180 W	140W	28V	65V	1.2A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRFR3607TR MOSFET AUTO 75V 1 N-CH HEXFET 9mOhms Infineon Technologies AG	-		DPAK	RoHS Compliant	Reel	-	-	75 V	N-Channel	SMD/SMT	-	-	80 A	-	20 V	-	140 W	2000	-	-	-	-	New Product: New from this manufacturer.	-	-	-	-	-	-	-	-	-	-	-	-	-	-	56 nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SKB10N60 IGBT Transistors FAST IGBT NPT TECH 600V 10A Infineon Technologies	-		TO-263-3	RoHS Compliant	Reel	+ 150 C	-	-	-	SMD/SMT	-	IGBT Transistors	-	Single	-	-	-	-	-	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	600 V	21 A	+/- 20 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC889N03LS G MOSFET N-KANAL POWER MOS MOSFET N-CH 30V 45A TDSON-8 Infineon Technologies	5000	5000: ¥2.2656	TDSON-8	RoHS Compliant	Reel	+ 150 C	BSC889N03LSGATMA1 BSC889N03LSGXT SP000475952	30 V	N-Channel	SMD/SMT	5,000	MOSFET	13 A	Single Quad Drain Triple Source	+/- 20 V	PG-TDSON-8	2.5 W	5000	0.009 Ohms	Surface Mount	-	28W	-	16nC @ 10V	13 ns	2.2V @ 250µA	45A	-	MOSFET N-Channel, Metal Oxide	2.4 ns	Logic Level Gate	2.2 ns	30V	1300pF @ 15V	-	BSC889N03LS GCT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD50N06S3-15 MOSFET OPTIMOS-T N-CH 55V 50A 15mOhms Infineon Technologies	2471	1: ¥2.72	TO-252	RoHS Compliant	Reel	+ 175 C	IPD50N06S315XT	55 V	N-Channel	SMD/SMT	-	MOSFET	50 A	Single	+/- 20 V	-	65 W	-	15 m Ohms	-	-	-	Obsolete	-	24 ns	-	-	-	-	67 ns	-	59 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 SPD07N20 G MOSFET N-KANAL POWER MOS MOSFET 200V 400mOhm 7A TO252 MOSFET N-CH 200V 7A TO252 MOSFET N-Ch 200V 7A DPAK-2 Infineon Technologies	2761	1: ¥6.732	TO-252	RoHS Compliant	Reel	+ 175 C	SP000449008 SPD07N20GBTMA1 SPD07N20GXT	200 V	N-Channel	SMD/SMT	2,500	MOSFET	7 A	Single	20 V	PG-TO252-3	40 W	2500	0.4 Ohms	SMD	SPD07N20	40W	-	21nC	-	4V @ 1mA	7A	-	MOSFET N-Channel, Metal Oxide	-	Standard	-	200V	530pF @ 25V	-	SPD07N20 GCT	OptMOS	21 nC	-	-	-	-	-	2500	OptiMOS	2500	NO	RoHS-conform	NO	40W	200V	SPD07N20 G	13 weeks	3.1K/W	-	-	-	-	4.2 S, 3 S	-	-	-	-	-	-	-	-	-	-	-	-	-	4.2 S, 3 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP04CNE8N G MOSFET N-CH 85V 100A 3.9mOhms Infineon Technologies	-		TO-220	RoHS Compliant	Tube	+ 175 C	IPP04CNE8NGXK	85 V	N-Channel	Through Hole	-	MOSFET	100 A	Single	+/- 20 V	-	300 W	-	0.0042 Ohms	-	-	-	Obsolete	-	76 ns	-	-	-	-	25 ns	-	78 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD096N08N3 G MOSFET N-Channel MOSFET 20-200V N-CH 80V 73A 10mOhm TO252-3 MOSFET N-CH 80V 73A TO252-3 Infineon Technologies	2919	1: ¥6.256	TO-252	RoHS Compliant	Reel	+ 175 C	IPD096N08N3GBTMA1 IPD096N08N3GXT SP000474196	80 V	N-Channel	SMD/SMT	2,500	MOSFET	73 A	Single	+/- 20 V	PG-TO252-3	100 W	2500	0.0096 Ohms	SMD	IPD096N08	100W	-	35nC	23 ns	3.5V @ 46µA	73A (Tc)	-	MOSFET N-Channel, Metal Oxide	5 ns	Standard	30 ns	80V	2410pF @ 40V	-	-	OptiMOS	-	-	-	-	-	-	2500	OptiMOS	2500	NO	RoHS-conform	NO	100W	80V	IPD096N08N3 G	14 weeks	1.5K/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 PTFB211501E V1 R250 Transistors RF MOSFET Power RFP-LDMOS 9 FET RF LDMOS 150W H36248-2 Infineon Technologies	10	250: ¥438.6612	H-36248-2	Lead free / RoHS Compliant	Tape & Reel (TR)	+ 125 C	FB211501EV1R25XT PTFB211501EV1R250XTMA1 SP000707930	65 V	LDMOS	-	250	Transistors RF MOSFET Power	1.2 A	Single	10 V	H-36248-2	-	-	0.08 Ohms	-	PTFB211501	-	-	-	-	-	-	2.17GHz	-	-	-	-	-	-	18dB	-	-	-	-	140W	30V	65V	1.2A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 PTFA192401F V4 Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8 IC FET RF LDMOS 240W H-37260-2 Infineon Technologies	10	40: ¥941.5144	H-37260-2	Lead free / RoHS Compliant	Tray	+ 150 C	FA192401FV4XP PTFA192401FV4XWSA1 SP000457842	65 V	N-Channel	SMD/SMT	40	Transistors RF MOSFET Power	1.6 A	Single	12 V	H-37260-2	761 W	40	0.03 Ohms at 10 V (Typ)	-	PTFA192401	-	-	-	-	-	-	1.93 GHz to 1.99 GHz	-	-	-	-	-	-	16 dB	-	-	-	240 W	50W	30V	65V	1.6A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10µA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 IPB019N06L3 G MOSFET OptiMOS3 PWRTrnsistr LOGIC LEVEL N-CH N-CH 60V 120A 2mOhm TO263-3 MOSFET N-CH 60V 120A TO263-3 MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 Infineon Technologies	864	1: ¥21.148	TO-263	RoHS Compliant	Reel	+ 175 C	IPB019N06L3GATMA1 IPB019N06L3GXT SP000453020	60 V	N-Channel	-	1,000	MOSFET	120 A	Single	+/- 20 V	PG-TO263-2	250000 mW	1000	1.9 mOhms	SMD	IPB019N06	250W	-	166nC	131 ns	2.2V @ 196µA	120A	-	MOSFET N-Channel, Metal Oxide	-	Logic Level Gate	-	60V	28000pF @ 30V	-	IPB019N06L3 GCT	OptiMOS 3	-	-	-	-	-	-	1000	OptiMOS	1000	NO	RoHS-conform	YES	250W	60V	IPB019N06L3 G	14 weeks	0.6K/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUZ73A MOSFET N-CH 200V 5.5A MOSFET N-CH 200V 5.5A TO-220AB Infineon Technologies	100	1: ¥3.672	TO-220AB	RoHS Compliant	Tube	+ 150 C	BUZ73AXK	200 V	N-Channel	Through Hole	500	MOSFET	5.5 A	Single	+/- 20 V	PG-TO220-3	40 W	50	0.6 Ohms	Through Hole	-	40W	Obsolete	-	55 ns	4V @ 1mA	5.5A (Tc)	-	MOSFET N-Channel, Metal Oxide	30 ns	Standard	40 ns	200V	530pF @ 25V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC020N03LSGATMA1 Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 infineon technologies	1667	1: ¥8.568	8TDSON EP	RoHS Compliant	Reel	-55 to 150 °C	-	30 V	N-Channel	SMD/SMT	Tape & Reel	-	-	1 N-Channel	-	-	-	5000	2@10V mOhm	Surface Mount	-	-	-	-	42 ns	1 V	100 A	-	-	7 ns	-	7 ns	-	-	-	-	Si	93 nC	-	-	-	-	-	-	OptiMOS	-	-	-	-	-	-	-	-	-	-	-	±20 V	-	65 S	-	30 V	96 W	28 A	Infineon Technologies	-	-	-	-	-	-	-	-	-	SON	Compliant	1 Channel	1	2500	7 ns	1.7 mOhms	11 ns	5.15 mm	1.27 mm	5.9 mm	No Lead	5.15	TDSON EP	8	1	Enhancement	8	-	-	-	-	-	-
2 BFS 17W H6327 Transistors RF Bipolar Power RF BIP TRANSISTOR TRANS RF NPN 15V 25MA SOT323 Transistors RF Bipolar RF BIP TRANSISTOR RF Bipolar Transistors RF BIP TRANSISTOR Infineon Technologies	11896	1: ¥2.788	SC-70, SOT-323	RoHS Compliant	Reel	- 65 C	BFS17WH6327XT BFS17WH6327XTSA1 SP000750450	-	NPN	SMD/SMT	3,000	Transistors RF Bipolar Power	-	-	-	PG-SOT323-3	-	3000	-	Surface Mount	BFS17	280mW	-	-	-	-	-	1 GHz	-	-	-	-	-	-	-	BFS 17W H6327CT	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	15V	25mA	-	25 mA	-	-	-	280 mW	-	Infineon Technologies	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.4GHz	3.5dB ~ 5dB @ 800MHz	2.5 V	40 @ 2mA, 1V	RF Bipolar Power	-
BF998E6327XT Trans MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143 T/R Trans MOSFET N-CH 12V 0.03A 4-Pin (3+Tab) SOT-143 T/R infineon technologies	-		4SOT-143	-	-	-55 to 150 °C	-	-	-	-	Tape & Reel	-	-	-	-	-	-	-	-	Surface Mount	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±8 V	-	-	-	12 V	-	0.03 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FZ300R12KE3GS IGBT Transistors 1200V 300A SINGLE Infineon Technologies	-		IS5a ( 62 mm )	No	-	-	-	-	-	Screw	-	IGBT Transistors	-	-	-	-	1450 W	10	-	-	-	-	Obsolete	400 nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.7 V
2 PTFA210601E V4 Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8 IC FET RF LDMOS 60W H-36265-2 Infineon Technologies	-		H-36265-2	RoHS Compliant	Tray	+ 150 C	FA210601EV4XP	65 V	N-Channel	SMD/SMT	50	Transistors RF MOSFET Power	550 mA	Single	12 V	H-36265-2	196 W	50	-	-	-	-	Obsolete	-	-	-	-	2170 MHz	-	-	-	-	-	-	16 dB	SP000376074	-	-	60 W	12W	28V	65V	550mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10µA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 IPP80N06S4L-05 MOSFET N-Channel 60V MOSFET MOSFET 60V 4.8mOHM AECQ TO220 MOSFET N-CH 60V 80A TO220-3 Infineon OptiMOS T2 系列 Si N沟道 MOSFET , 80 A, Vds=60 V, 3针 TO-220封装 MOSFET N-Ch 60V 80A TO220-3 OptiMOS-T2 Infineon Technologies	708	1: ¥10.54	TO220-3	RoHS Compliant	Tube	-	IPP80N06S4L05AKSA1 IPP80N06S4L05AKSA2 SP000415708	-	-	-	500	-	80A	-	-	PG-TO220-3	-	-	0.0085Ohm	THT	IPP80N06S4L	107W	-	83nC	-	2.2V @ 60µA	80A (Tc)	-	MOSFET N-Channel, Metal Oxide	-	Logic Level Gate	-	60V	8180pF @ 25V	-	-	-	-	-	-	-	-	-	500	-	500	AEC-Q(100)	RoHS-conform	YES	107W	60V	IPP80N06S4L-05	17 weeks	1.4K/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-