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Micron Technology, Inc.

Micron Technology, Inc.- Networking & Connectivity

Micron Technology, Inc. is an American producer of computer memory and data storage including dynamic random-access memory, flash memory, and USB flash drives. Headquartered in Boise, Idaho, Micron has been a pioneer in semiconductor innovation since its founding in 1978. The company designs and manufactures industry-leading DRAM, NAND flash, and NOR flash memory products, as well as solid-state drives (SSDs), managed NAND, and multichip packages. Its consumer products are marketed under the Crucial brand, offering memory and storage upgrades for desktops, laptops, and servers. Micron’s advanced memory solutions power a wide array of applications, from cloud data centers and artificial intelligence to mobile devices, automotive systems, and edge computing. With proprietary technologies like 1α (1-alpha) DRAM and 176-layer NAND, Micron consistently pushes the boundaries of performance, power efficiency, and density. The company is one of the world’s largest semiconductor memory manufacturers, ranking among the top three DRAM suppliers globally and a major NAND flash producer. It holds a vast portfolio of over 40,000 patents, reflecting its deep commitment to research and development. Micron’s global manufacturing and R&D footprint spans the United States, Asia, and Europe. Listed on the Nasdaq under the ticker MU, Micron continues to shape the future of memory and storage for an increasingly data-driven world.

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Networking & Connectivity - 型号列表

234 parts in total

Voltage Rating

Density

Number of Words

Standard Package

Memory Type

Package / Case

Supplier Device Package

Standard Package Name

Number of Bits per Element

Lead Style

Package Quantity

Primary Material

Number of Positions

Printed Circuit Board

Operating Temperature

RoHS

Speed

Voltage

Interface

Memory Size

Voltage - Supply

Current Rating (Max)

Voltage - Supply (Min)

Width

Length - Overall

Shell Size - Insert

Number of Addresses

Timing Adjustment Method

Mfr Part #Quantity AvailablePriceOperating TemperatureMOQUnit PackStandard Package NameVoltage RatingNumber of Bits per ElementLead StyleMounting TypePackage QuantityPrimary MaterialNumber of PositionsDensityNumber of WordsPrinted Circuit BoardStandard PackageSpeedInterfaceMemory SizeMemory TypeVoltage - SupplyPackagingPackage / CaseSupplier Device PackageMemory FormatRoHSEU RoHSVoltageCurrent Rating (Max)Voltage - Supply (Min)WidthLength - OverallShell Size - InsertLocationArchitectureMemory OrganizationNumber of AddressesTiming Adjustment MethodCommon Mode Transient Immunity (Min)
MT46V64M4T16AWC1
MT46V64M4T16AWC1

64X4 SDRAM DDR DIE

micron

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MT9P001I12STC:B
MT9P001I12STC:B

CMOS SENSOR CMOS IMAGER BOISE ASSEMBLY LCC 48 P

micron

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MT9D011D00STC-C15LC1
MT9D011D00STC-C15LC1

MICMT9D011D00STC-C15LC1 2MP SENSOR-ONLY

micron

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CF128M-SMHY2-0642
CF128M-SMHY2-0642

MICCF128M-SMHY2-0642 128MB CF MEMORYCARD

micron

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MT29F2G08AADWP
MT29F2G08AADWP

2G NAND FLASH MEMORY 256MBX8

micron

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MT29F4G08AACWC:C
MT29F4G08AACWC:C

MICMT29F4G08AACWC:C 4GB SLC NAND TSOP 3. SLC NAND Flash 3.3V 4Gbit 512M x 8bit 48-Pin TSOP 512MX8 NAND FLASH PLASTIC PBF TSOP

micron

1013: ¥74.807010TSOP3.38Gull-wingSurface MountTSOPSLC NAND484G512M48------------------------
TE28F320J3D75894037
TE28F320J3D75894037

NUMTE28F320J3D75894037 EMBEDDED FLASH ME

micron

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GE28F160C3TD70A
GE28F160C3TD70A

MM#853978FLASH 28F160C3TD 70 VF-PBGA46 C NOR Flash Parallel 3V/3.3V 16Mbit 1M x 16bit 70ns 48-Pin VFBGA Tray IC FLASH 16MBIT 70NS 46VFBGA

micron

101500: ¥15.5836-40°C ~ 85°C--BGA2.716BallSurface MountVFBGANOR4816M1M4825070nsParallel16M (1M x 16)Advanced + Boot Block FLASHYesTray46-VFBGA46-VFBGAFLASHRoHS non-compliantNot Compliant1.65 to 3.6|11.4 to 12.6183.66.967.290.67TopSectoredAsymmetrical20AsynchronousExtended
JS28F160B3TD70A
JS28F160B3TD70A

MM#866262FLASH 28F160B3TD 70 TSOP48 COMM IC FLASH 16MBIT 70NS 48TSOP

micron

211: ¥151.7828-40°C ~ 85°C-------------9670nsParallel16M (1M x 16)Advanced Boot Block FLASH2.7 V ~ 3.6 VTray48-TFSOP (0.724", 18.40mm Width)48-TSOP (18.4x12)FLASH--------------
MT48H16M16LFBF-75
MT48H16M16LFBF-75

MICMT48H16M16LFBF-75 IT:G 256MB MOBILE S

micron

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NAND512W3A2CND
NAND512W3A2CND

512 NAND

micron

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TE28F640P30T85A
TE28F640P30T85A

EMBEDEED FLASH MEMORY NOR Flash Parallel/Serial 1.8V 64Mbit 4M x 16bit 85ns 56-Pin TSOP Tray IC FLASH 64MBIT 85NS 56TSOP

micron

--40°C ~ 85°C--TSOP1.716Gull-wingSurface MountTSOPNOR5664M4M5657685nsParallel|Serial64M (4M x 16)FLASH - NORYesTray56-TFSOP (0.724", 18.40mm Width)56-TSOP (14x20)FLASHContains lead / RoHS non-compliantNot Compliant8.5 to 9.528218.4140.99TopSectoredAsymmetrical22Asynchronous|Synchronous-
M36C0W6050T0ZSPE
M36C0W6050T0ZSPE

NUMM36C0W6050T0ZSPE MCP 64MB NOR+32MB PS

micron

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PH28F640W18BD60B
PH28F640W18BD60B

NUMPH28F640W18BD60B PH28F640W18BD60S L78

micron

102000: ¥34.782--------------------------------------
MICMT42L4DCKJDC
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MICMT46H16M32LFB!D
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MICMT46H32M32LFB!D
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MICMT47H128M16RT!E
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MICMT7DEWQAAAAA1
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MT29C2G48MAJJCJC-5 IT
MT29C2G48MAJJCJC-5 IT

64MX16 DDR2 SDRAM PLASTIC LOW POWER COMMERCIAL PBF FBGA 1.8V 256MX8/128MX16 MCP PLASTIC IND TEMP

micron

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