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NEC Corporation

NEC Corporation- Discrete IGBTs

NEC Corporation, originally founded as Nippon Electric Company, Limited in 1899, is a Japanese multinational information technology and electronics company headquartered in Tokyo, Japan. Its business is divided into IT Solutions, Network Solutions, and Electronic Devices segments. The Electronic Devices division supplies a broad portfolio of semiconductor products, including system-on-chips, microcontrollers, power devices, and optical components. Historically, NEC's microcontroller lineup featured the 78K series (8-bit), 78K0 series (16-bit), and V850 series (32-bit), though these MCU lines were later transferred to Renesas Electronics following a spin-off. In power semiconductors, NEC offers discrete power MOSFETs, IGBT modules, and power management ICs for industrial and automotive applications. NEC is also a key provider of compound semiconductor devices, such as GaAs and GaN RF transistors for wireless infrastructure. Sensor solutions from NEC encompass image sensors, environmental sensors, and biometric sensors. The company built the Earth Simulator supercomputer, once the world's fastest, and maintains a strong legacy in high-performance computing. As a member of the Sumitomo Group and a Fortune Global 500 enterprise, NEC holds a prominent position in the global electronics industry through advanced network systems and specialty electronic components.

03

Discrete IGBTs - 型号列表

6 parts in total

Package / Case

Vgs(th) (Max) @ Id

Rds On (Max) @ Id, Vgs

Power Dissipation (Max)

Drain to Source Voltage (Vdss)

Input Capacitance (Ciss) (Max) @ Vds

Drive Voltage (Max Rds On, Min Rds On)

Current - Continuous Drain (Id) @ 25degC

Base Product Number

Packaging

Vgs (Max)

Gate Charge (Qg) (Max) @ Vgs

Mounting Type

Supplier Device Package

Operating Temperature

Mfr Part #Quantity AvailablePricePackagingPackage / CasePart StatusQualificationFET TypeVgs (Max)FET FeatureVgs(th) (Max) @ IdRds On (Max) @ Id, VgsPower Dissipation (Max)Drain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsDrive Voltage (Max Rds On, Min Rds On)Current - Continuous Drain (Id) @ 25degCMounting TypeSupplier Device PackageMfrGradeSeriesTechnologyBase Product NumberOperating TemperatureGate Charge (Qg) (Max) @ VgsFactory Pack QuantityRoHSPower - RatedTransistor TypeVce(on) (Max) @ Vge, IcDC Resistance (DCR) - PrimaryVoltage - Gate Trigger (Vgt) (Max)Current - Drain (Idss) @ Vds (Vgs=0)Mounting StyleMechanical Life
NE85634-T1
NE85634-T1

Transistors RF Bipolar Power NPN High Frequency

NEC/CEL

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NE46134
NE46134

Transistors RF Bipolar Power NPN Med Pwr Hi-Freq

NEC/CEL

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NE429M01-T1
NE429M01-T1

MOSFET Super Lo Noise HJFET

NEC/CEL

-ReelMini-6---------------------3000No125 mWN-Channel2 V0.06 S- 3 V10 mASMD/SMTObsolete
2SK4070-ZK-E2-AY
2SK4070-ZK-E2-AY

N-CHANNEL MOSFET

NEC Corporation

2500369: ¥5.508BulkTO-252-3, DPAK (2 Leads + Tab), SC-63Active-N-Channel±30V-3.5V @ 1mA11Ohm @ 500mA, 10V1W (Ta), 22W (Tc)600 V110 pF @ 10 V10V1A (Tc)Surface MountTO-252 (MP-3ZK)NEC Corporation--MOSFET (Metal Oxide)2SK4070150°C5 nC @ 10 V----------
2SK4076-ZK-E1-AY
2SK4076-ZK-E1-AY

N-CHANNEL MOSFET

NEC Corporation

2500336: ¥6.052BulkTO-252-3, DPAK (2 Leads + Tab), SC-63Active-N-Channel±20V-2.5V @ 1mA16mOhm @ 17.5A, 10V1W (Ta), 26W (Tc)40 V1200 pF @ 10 V4.5V, 10V35A (Tc)Surface MountTO-252 (MP-3ZK)NEC Corporation--MOSFET (Metal Oxide)2SK4076150°C24 nC @ 10 V----------
FS70UMJ-06F
FS70UMJ-06F

Buy now, ships today. FS70UMJ-06F - N-Channel 60 V 70A (Tc) 125W (Tc) Through Hole TO-220 from NEC Corporation. View datasheets, pricing and availability from DigiKey now!

NEC Corporation

28879: ¥25.704BulkTO-220-3Active-N-Channel±20V-2V @ 1mA7mOhm @ 36A, 10V125W (Tc)60 V8500 pF @ 10 V4V, 10V70A (Tc)Through HoleTO-220NEC Corporation--MOSFET (Metal Oxide)FS70UM-55°C ~ 150°C-----------
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