- Home
- Manufacturer
- NTE Electronics, Inc.
Discrete Semiconductors

NTE Electronics, Inc.- Discrete Semiconductors
03
Discrete Semiconductors - 型号列表
3 parts in total| Mfr Part # | Quantity Available | Price | Tariff No | Weight | SCR Type | Current - Breakover | Voltage - Breakover | Number of Pins | Package / Case | Vgs (Max) | Transistor Type | Voltage - Threshold | Resistance - RDS(On) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25degC | Material Finish | Power - Rated | Connector Type | Package Cooled | Thermal Resistance | Operating Temperature - Junction | RoHS | Current Rating (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NTE2379 MOSFET; N-Channel; 1.2 Ohms; 600 V; 6.2 A; 125 W; -55 to ? degC; 1.5 V; 32 ns Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220 MOSFET, N-CH HIGH SPEED SWITCH 6.2A, TO220-3 POWER MOSFET N-CHANNEL 600V ID=6.2A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MO MOSFET N, 600 V 6.2 A 125 W TO-220, NTE2379, NTE NTE Electronics | 15 | 1: ¥33.32 | 85411000 | 0.005 | - | - | - | - | - | :10V | :N Channel | :2V | :1.2ohm | :600V | :6.2A | :- | - | - | - | - | - | - | - |
NTE6408 DIAC; 32 V (Typ.); 250 mW; 100; 25 muA (Max.); DO-35; -40 degC; 125 degC Thyristor DIAC 2-Pin DO-35 DIAC, 36V, DO-35 DIODE - DIAC 32V +-4V 2A DO7/DO35 Trigger diode DO-35 28...36 V, NTE6408, NTE NTE Electronics | 14 | 1: ¥5.848 | 85411000 | 0.002 | :DO-35 | :25µA | :28V | :2 | :DO-35 | - | - | - | - | - | - | - | 250 mW | :Axial Leaded | DO-35 | 100 | 125 °C | - | - |
NTE6407 Thyristor DIAC 2-Pin DO-35 DIAC, 32V, DO-35 DIODE - DIAC 28V+-4V 2A DO7/DO35 Trigger diode DO-41 24...32 V, NTE6407, NTE NTE ELECTRONICS | 161 | 1: ¥9.06 | 85411000 | 0.002 | :DO-35 | :25µA | :24V | :2 | :2-DO-35 | - | - | - | - | - | - | - | - | - | - | - | - | RoHS Compliant Part | :2A |
Page 1 / 1
1

