NTE Electronics, Inc.- Bipolar Transistors

NTE Electronics, Inc. is a premier supplier of electronic components, headquartered in Bloomfield, New Jersey, USA. Founded in 1979, the company has built a strong reputation for providing high-quality replacement parts and original components to the industrial, commercial, and consumer electronics markets. The core business focuses on sourcing and distributing a wide array of components, with a particular emphasis on cross-referenced replacements for obsolete or hard-to-find semiconductor devices. NTE's product line encompasses semiconductors (transistors, diodes, thyristors, and integrated circuits), relays, capacitors, resistors, heat shrink tubing, connectors, and various tools and accessories. Notable product series include the NTE/ECG semiconductor line, which offers equivalent replacements for major manufacturer part numbers, and the extensive RLY series of electromechanical and solid-state relays. The company also offers popular capacitor lines such as the NEH series for aluminum electrolytic and the MLR series for ceramic disc capacitors. With a comprehensive cross-reference database, NTE enables engineers and technicians to quickly locate compatible replacements, reducing equipment downtime. While not a semiconductor manufacturer in the traditional sense, NTE holds a significant market position in the North American aftermarket electronic components space, known for reliable quality and wide availability. The company distributes through a network of authorized distributors, making its products accessible to repair shops, OEMs, and hobbyists alike. NTE Electronics continues to expand its portfolio to meet evolving industry needs, maintaining a focus on sustainability by extending the life of electronic equipment through repair.

Bipolar Transistors - 型号列表

286 parts in total

Mfr Part #	Quantity Available	Price	Transistor Type	Voltage - Supply	Power - Rated	Package Cooled	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Power Dissipation (Max)	Operating Temperature - Junction	Tariff No	Weight	Polarity	Vce Saturation (Max) @ Ib, Ic	Primary Material	Type	Other Specifications	Frequency	Number of Pins	Frequency - Transition	Operating Temperature	Current - Collector Cutoff (Max)	Current	Thermal Resistance @ Natural	RoHS	Element Type	Material - Core	Current Drain (Id) - Max	Drain to Source Voltage (Vdss)	Polarization	Package / Case	Channel Type	Inductance	Gain Bandwidth Product	Capacitance	Current - Test	Capacitance - Input	Voltage - Breakdown	Voltage - Off State	Current - Drain (Idss) @ Vds (Vgs=0)	Thermal Resistance	Current Transfer Ratio (Max)	Amplifier Type	Voltage - Cutoff (VGS off) @ Id	Material Finish	RF Family/Standard	Resistor - Emitter Base (R2)	Current - Output 1	Voltage - Input (Min)	Vgs (Max)	Delay Time - ON	Delay Time - OFF	Voltage - Threshold	Resistance - RDS(On)	Current - Continuous Drain (Id) @ 25degC	Standard Pack
2 NTE222 MOSFET; N-Channel; 25 V (Min.); 30 V; mA; 360 mW @ degC; -65 to ? degC Trans MOSFET N-CH 25V 0.05A 3-Pin TO-72 MOSFET N-CHANNEL DUAL GATE 20V IDSS= 5-35MA TO-72 CASE GATE PROTECTED VHF AMP/MI NTE Electronics	147	1: ¥91.12	-	-	360 mW	3-Pin Metal Case	-	-	-	+175 °C	-	-	-	-	-	-	-	-	-	-	-65 to +175 °C	-	-	-	-	-	-	50 mA	25 V	N-Channel	-	N-Channel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 NTE98 Transistor; TO-3; NPN; 500; 8 V; 20 A; 175 W; -65 to 200 degC; 1 degC/W; 0.25 Trans Darlington NPN 500V 20A 3-Pin(2+Tab) TO-3 DARLINGTON TRANSISTOR, NPN, 500V, TO-3 T-NPN SI-PWR DARL HV AMP Darlington transistor TO-3 NPN 500 V, NTE98, NTE NTE Electronics	14	1: ¥161.296	:NPN	:500V	-	-	:40	:20A	:175W	-	85331000	0.014	-	-	-	-	-	-	:2	-	:-65°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 NTE179 Transistor; Audio Power; PNP; 40 V; 90 V; 25 A; 5 A; 106 W; 0.8 degC/W; 2 V; TO Trans GP BJT PNP 40V 25A 3-Pin(2+Tab) TO-3 TRANSISTOR PNP GERMANIUM 90V 25 AMP TO-3 CASE AUDIO POWER AMP NTE Electronics	10	1: ¥227.12	PNP	40 V	106 W	TO-3	65 to 300	25 A	-	110 °C	-	-	PNP	0.5 V	Ge	Audio Amplifier, Power	2 V	500 kHz	-	-	-	-	5 A	0.8 °C/W	-	-	-	-	-	-	-	-	-	500 kHz	-	-	-	-	-	-	-	-	Audio Power	-	-	-	-	-	-	-	-	-	-	-	-	-
5 NTE312 JFET; -6 V; 50; -30 mA; -30 V; 360 mW; 4000; TO-92 Trans JFET N-CH 3-Pin TO-92 JFET, N CHANNEL , -25V, TO-106 JFET N-CHANNEL 30V TO-92 CASE VHF AMP/MIX Junction FET TO-92 N, NTE312, NTE NTE Electronics	20	1: ¥12.24	:JFET	–30 V	360 mW	TO-226AA (TO-92)	-	-	:360mW	-	85331000	0.002	-	-	-	-	-	-	:3	-	:-55°C	-	50 mA	-	-	-	-	:15mA	30 V	N-Channel	:TO-92	N-Channel	4000 umhos	-	1 pF	–1 nA	4.5 pF	:-30V	–6 V	:5mA	-	-	-	:-6V	:MSL 1 - Unlimited	-	-	-	-	-	-	-	-	-	-	-
5 NTE2501 Transistor; NPN; TO-126M; NPN; 300 V; 300 V; 5 V; 100 mA; 1.5 W (Collector) Trans GP BJT NPN 300V 0.2A 3-Pin RF TRANSISTOR, NPN, 600mV, 70MHZ TRANSISTOR NPN SILICON 300V IC=0.1A TO-126ML CASE HIGH VOLTAGE VIDEO OUTPUT COMP Transistor TO-126 NPN 300 V 100 mA, NTE2501, NTE NTE Electronics	30	1: ¥10.608	:NPN	:600mV	1.5 W	TO-126ML	:200	:100mA	:1.5W	0 to +150 °C	85412900	0.003	NPN	600 mV	Si	High Voltage	5 V	70 MHz	-	:70MHz	-	-	-	-	RoHS Compliant Part	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:-	-	-	-	-	-	-	-	-	-	-
2 NTE288 Transistor; PNP; Silicon; 300 V (Max.); 300 V (Max.); 5 V (Max.); 500 mA (Max.) Trans GP BJT PNP 300V 0.5A 3-Pin TO-92 TRANSISTOR PNP SILICON 300VC IC-0.5A TO-92 CASE GEERAL PURPOSE AMP COMP'L TO NTE NTE Electronics	10	1: ¥6.324	PNP	300 V	625 mW	TO-92	25	500 mA	-	-55 to +150 °C	-	-	PNP	0.5 V	Si	General Purpose, High Voltage	5 V	50 MHz	-	-	-	0.25 μA	-	83.3 °C/mW	-	NPN	Silicon	-	-	-	-	-	-	-	-	-	-	-	-	-	200 °C/mW	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 NTE54 Transistor; NPN; TO-220; 150 V; 150 V; 5 V; 8 A; 50 W; -65 to 150 degC; 40; PNP Trans GP BJT NPN 150V 8A 3-Pin(3+Tab) TO-220 TRANSISTOR - NPN AF POWER AMP TO220 CASE Power transistor TO-220 NPN 150 V, NTE54, NTE NTE Electronics	12	1: ¥20.40	NPN	150 V	2 W	TO-220	40	8 A	50 W	-65 to 150 °C	-	-	NPN	0.5 V	Si	Amplifier, Driver	5 V	30 MHz	-	70	-	0.1 mA	-	2.5 °C/W	-	PNP	Silicon	-	-	-	TO-220	-	-	-	-	-	-	-	-	-	-	40 ...	-	-	-	-	1 V	-	-	-	-	-	-	-	-	-
4 NTE280 Transistor; TO3; NPN; 140 V; 140 V; 5 V; 12 A; 100 W; 150 degC; 140 V (Min.) Trans GP BJT NPN 140V 12A 3-Pin(2+Tab) TO-3 BJT, NPN, 140V, 12A, 2-TO-3 TRANSISTOR NPN SILICON 140V IC=12A TO-3CASE AUDIO POWER OUTPUT COMPLEMENT TO NT NTE Electronics	20	1: ¥39.78	:NPN	:140V	100 W	TO-3	:40	:12A	:100W	150 °C	85412900	0.014	NPN	3 V	Si	Audio Amplifier, Power	5 V	5 MHz	-	:5MHz	:150°C	100 μA	-12 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTE214 Transistor; NPN; Darlington; 70 V; 10 A; Plastic TO-3 TRANSISTOR NPN SILICON 70VC IC=10A TO-3P CASE DARLNGTON DRIVER TF=1.8US NTE Electronics	58	1: ¥50.388	-	-	2.5 W	TO-3P	5000	-	-	-	-	-	NPN	0.9 V	Si	Driver, High DC Current Gain	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10 A	6 V	-	-	-	-	-	-	-
3 NTE253 Transistor; TO126; NPN; 80; 80; 5 V; 4 A; 40 W; -65 to 150 degC; 3.23 degC/W; Trans Darlington NPN 80V 4A 3-Pin TO-126 DARLINGTON TRANSISTOR, NPN, 80V, TO-126 TRANSISTOR NPN SILICON DARLINGTON 80V IC=4A TO-126 CASE POWER AMP COMP'L TO NTE2 NTE Electronics	110	1: ¥9.928	:NPN	:80V	-	-	:2000	:4A	:40W	-	85412900	0.003	-	-	-	-	-	-	:3	-	:-65°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 NTE332 Transistor; PNP; Silicon; TO-220; 100 V; 100 V; 5 V; 15 A; 5 A; 90 W; 150 degC Trans GP BJT PNP 100V 15A 3-Pin(3+Tab) TO-220 BIPOLAR TRANSISTOR, PNP, -100V, TO-220 TRANSISTOR PNP SILICON 100V IC=15A TO-220 CASE COMP'L TO NTE331 NTE Electronics	28	1: ¥20.468	:PNP	:-100V	90 W	TO-220	:40	:-15A	:90W	150 °C	85412100	0.004	PNP	3 V	Si	Audio Amplifier, Power	5 V	3 MHz	:3	:3MHz	-	20 μA @ VCB == 90V, IE == 0	5 A	1.4 °C/W	RoHS Compliant Part	NPN	Silicon	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTE457 Transistor; JFET; Silicon N Channel; 310 mW; 125 degC Trans JFET N-CH 25V 3-Pin TO-92 JFET-N-CH GEN PURP AMP/SW Junction FET TO-92 N, NTE457, NTE NTE Electronics	17	17: ¥29.308	N-Channel	–30 V	310 mW	TO-226AA (TO-92)	-	-	-	+125 °C	-	-	N	-	-	-	25	-	-	-	-	-	50 mA	-	-	-	-	15 mA	30 V	N-Channel	TO-92	N-Channel	4000 umhos	-	1 pF	–1 nA	4.5 pF	–30 V	–6 V	1...5 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 NTE251 Transistor; NPN; TO3; NPN; 100 V (Max.); 100 V (Max.); 5 V (Max.); 20 A (Max.) Trans Darlington NPN 100V 20A 3-Pin(2+Tab) TO-3 DARLINGTON TRANSISTOR, NPN, 100V, TO-3 TRANSISTOR NPN SILICON DARLINGTON 100V IC=20A TO-3 CASE POWER AMP COMP'L TO NTE2 NTE Electronics	10	1: ¥56.984	:NPN	:100V	-	-	:18000	:20A	:160W	-	85412100	0.014	-	-	-	-	-	-	:2	-	:-65°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 NTE290A Transistor; PNP; Silicon; 100 V; 80 V; 5 V; 500 mA; 600 mW (Collector); 150 deg Trans GP BJT PNP 80V 0.5A 3-Pin BIPOLAR TRANSISTOR, PNP, -80V TO-92 TRANSISTOR PNP SILICON 100V IC=0.5A TO-92 CASE AUDIO POWER AMP COMP'L TO NTE289A Transistor TO-92 PNP -80 V 500 mA, NTE290A, NTE NTE Electronics	10	3: ¥25.50	:PNP	:-80V	600 mW	TO-92	:200	:-500mA	:600mW	150 °C	85411000	0.00045	PNP	0.25 V	Si	Audio Amplifier, Power	5 V	120 MHz	:3	:120MHz	-	20 μA	-	-	RoHS Compliant Part	NPN	Silicon	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 NTE491 MOSFET; N-Channel; 60 V; 200 mA; 5 Ohms; 350 mW; TO-92 Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 N CHANNEL MOSFET, 60V, 200mA, TO-92 MOSFET-N CHAN ENHANCEMENT NTE Electronics	45	1: ¥4.284	:N Channel	-	350 mW	TO-92	-	-	-	+150 °C	85411000	0.00204	-	-	-	-	-	-	:3	-	-	-	-	-	RoHS Compliant Part	-	-	200 mA	:60V	N-Channel	-	-	320 Micromhos	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:10V	10 ns	10 ns	:3V	:9ohm	:200mA	-
4 NTE392 Transistor; NPN; TO-218; NPN; 100 V; 100 V; 5 V; 25 A; 125 W; -65 to 150 degC; T-NPN SI PWR AMP Transistor TO-218 NPN 100 V 25 A, NTE392, NTE NTE Electronics	10	1: ¥34.816	NPN	100 V	125 W	TO-218	75	25 A	125 W	-65 to 150 °C	-	-	NPN	4 V	Si	Amplifier, Power	5 V	3 MHz	-	3	-	-	-	1 °C/W	-	-	-	-	-	-	TO-218	-	-	-	-	-	-	-	-	-	35.7 °C⁄W	15 ...75	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 NTE55 Transistor; PNP; Silicon; TO220; 150 V; 150 V; 5 V; 8 A; 2 W; -65 to 150 degC Trans GP BJT PNP 150V 8A 3-Pin(3+Tab) TO-220 BIPOLAR TRANSISTOR, PNP, -150V, TO-220 TRANISTOR- PNP 150V 8A TO-220 HI-FREQUENCY DRIVER NTE Electronics	10	1: ¥24.48	:PNP	:-150V	-	-	:40	:-8A	:50W	-	85412100	0.004	-	-	-	-	-	-	:3	:30MHz	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 NTE281 Transistor; PNP; 140 V; 140 V; 5 V; 12 A; 100 muA (Max.); 40; 140; 3 V; 5 MHz Trans GP BJT PNP 140V 12A 3-Pin(2+Tab) TO-3 BJT, NPN, 140V, 12A, TO-3 TRANSISTOR PNP SILICON 140V IC=12A TO-3CASE AUDIO POWER OUTPUT COMPLEMENT TO NT NTE Electronics	19	1: ¥94.41	:PNP	:140V	100 W	TO-3	:40	:12A	:100W	-	85412900	0.014	PNP	3 V	Si	Audio Amplifier, Power	5 V	5 MHz	-	:5MHz	:150°C	100 μA	-12 A	-	RoHS Compliant Part	-	-	-	-	-	-	-	-	5 MHz	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 NTE37 Transistor; PNP; Silicon; TO3P; 160 V; 140 V; 6 V; 12 A; 100 W; 150 degC; NPN Trans GP BJT PNP 140V 15A 3-Pin(3+Tab) TO-3P BIPOLAR TRANSISTOR, PNP, -140V, TO-3P T-PNP SI PWR AMP HI SP SW Power transistor TO-3PJ PNP -140 V, NTE37, NTE NTE Electronics	16	1: ¥39.916	:PNP	:-140V	100 W	TO-3P	:200	:-12A	:100W	150 °C	85361010	0.005	PNP	1.1 V	Si	AF, Amplifier, High Current	6 V	15 MHz	:3	:15MHz	-	0.1 mA	-	-	-	NPN	Silicon	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTE123AP-10 Transistor; TO92; NPN; 40; 60; 6 V; 600 mA; 1 W @ 25 degC; -55 to 150 degC; 357 Transistor; TO92; NPN; 40; 60; 6 V; 600mA; 1 W @ 25 degC; -55 to 150 degC; 357 NTE Electronics	10	1: ¥59.976	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1