
NTE Electronics, Inc.- IGBTs
IGBTs - 型号列表
6 parts in total| Mfr Part # | Quantity Available | Price | Transistor Type | Tariff No | Weight | Voltage - Supply | Current - Collector (Ic) (Max) | Vgs (Max) | Voltage - Threshold | Resistance - RDS(On) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25degC | Number of Pins | Capacitance | Turn On Time | Power - Rated | Input Capacitance | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) @ Ib, Ic | Voltage - Gate Trigger (Vgt) (Max) | Polarity | Operating Temperature - Junction | Power Dissipation (Max) | Package Cooled | Thermal Resistance | Thermal Resistance @ Natural | Package / Case | Material Finish | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NTE3323 Transistor; Bipolar; N-Channel; 1200 V; 25 ADC; 50 A @ 1 ms; + 20 V; ? degC Trans IGBT Chip N-CH 1.2KV 25A 3-Pin IGBT N-CHANNEL ENHANCEMENT 1200V IC=25AMP TO-3P CASE HIGH SPEED SWITCH NTE Electronics | 10 | 1: ¥217.60 | N-Channel | - | - | 1200 V | 25 A | - | - | - | - | - | - | 3200 pF | 0.40 μs (Typ.) | 200 W | 3200 pF (Typ.) | 0.80 μs (Typ.) | 3 V | ± 20 V | N-Channel | +150 °C | - | - | - | - | - | - | - |
NTE3322 Transistor; Bipolar; N-Channel; 900 V; 60 ADC; 120 A @ 1 ms; + 25 V; ? degC Trans IGBT Chip N-CH 900V 60A 3-Pin IGBT N-CHANNEL ENHANCEMENT 900V IC=60A TO-3P CASE HIGH SPEED SWITCH NTE Electronics | 10 | 1: ¥217.60 | N-Channel | - | - | 900 V | 60 A | - | - | - | - | - | - | 5300 pF | 0.35 μs (Typ.) | 200 W | 5300 pF (Typ.) | 0.50 μs (Typ.) | 2.4 V | ± 25 V | N-Channel | +150 °C | - | TO-264VAR | 0.625 °C⁄W (Junction to Case) | 0.625 °C/W | - | - | - |
NTE2387 MOSFET; Power; N-Channel; 2.7 Ohms (Typ.); 800 V (Min.); 800 V; 4 A @ 25 degC Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220 MOSFET, N CHANNEL, 800V, 4A, TO-220 POWER MOSFET N-CHANNEL 800V ID=4A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MODE NTE Electronics | 10 | 1: ¥114.3624 | :N Channel | 85412900 | 0.005 | - | - | :10V | :3V | :2.7ohm | :800V | :4A | :3 | - | - | - | - | - | - | - | - | - | :125W | - | - | - | :TO-220 | :- | :150°C |
NTE2396 MOSFET; Enhancement mode; N-Channel; 0.077 Ohm (Max.); 100 V (Min.); 28 A Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220 ENHANCEMENT MODE N-CH MOSFET, 100V, 28A, TO-220 POWER MOSFET N-CHANNEL 100V ID=28A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MOD NTE Electronics | 50 | 1: ¥40.664 | :N Channel | 85412900 | 0 | - | - | :10V | :2V | :0.077ohm | :100V | :28A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| 10 | 1: ¥183.192 | :IGBT | 85412900 | 0.023 | :2V | :50A | - | - | - | - | - | :3 | - | - | - | - | - | - | - | - | - | :200W | - | - | - | - | - | - | |
NTE2989 Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 N CH MOSFET, 600V, 10A, TO-220VAR NTE ELECTRONICS | 10 | 1: ¥65.824 | :N Channel | 85412900 | 0.002 | - | - | :10V | :4V | :1ohm | :600V | :10A | :3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |

