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NTE Electronics, Inc.

NTE Electronics, Inc.- Discrete IGBTs

NTE Electronics, Inc. is a premier supplier of electronic components, headquartered in Bloomfield, New Jersey, USA. Founded in 1979, the company has built a strong reputation for providing high-quality replacement parts and original components to the industrial, commercial, and consumer electronics markets. The core business focuses on sourcing and distributing a wide array of components, with a particular emphasis on cross-referenced replacements for obsolete or hard-to-find semiconductor devices. NTE's product line encompasses semiconductors (transistors, diodes, thyristors, and integrated circuits), relays, capacitors, resistors, heat shrink tubing, connectors, and various tools and accessories. Notable product series include the NTE/ECG semiconductor line, which offers equivalent replacements for major manufacturer part numbers, and the extensive RLY series of electromechanical and solid-state relays. The company also offers popular capacitor lines such as the NEH series for aluminum electrolytic and the MLR series for ceramic disc capacitors. With a comprehensive cross-reference database, NTE enables engineers and technicians to quickly locate compatible replacements, reducing equipment downtime. While not a semiconductor manufacturer in the traditional sense, NTE holds a significant market position in the North American aftermarket electronic components space, known for reliable quality and wide availability. The company distributes through a network of authorized distributors, making its products accessible to repair shops, OEMs, and hobbyists alike. NTE Electronics continues to expand its portfolio to meet evolving industry needs, maintaining a focus on sustainability by extending the life of electronic equipment through repair.

03

Discrete IGBTs - 型号列表

6 parts in total

Weight

Transistor Type

Voltage - Supply

Current - Collector (Ic) (Max)

Voltage - Threshold

Resistance - RDS(On)

Drain to Source Voltage (Vdss)

Current - Continuous Drain (Id) @ 25degC

Capacitance

Turn On Time

Input Capacitance

Turn On / Turn Off Time (Typ)

Vce Saturation (Max) @ Ib, Ic

Voltage - Gate Trigger (Vgt) (Max)

Power Dissipation (Max)

Mfr Part #Quantity AvailablePriceTransistor TypeTariff NoWeightVoltage - SupplyCurrent - Collector (Ic) (Max)Vgs (Max)Voltage - ThresholdResistance - RDS(On)Drain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25degCNumber of PinsCapacitanceTurn On TimePower - RatedInput CapacitanceTurn On / Turn Off Time (Typ)Vce Saturation (Max) @ Ib, IcVoltage - Gate Trigger (Vgt) (Max)PolarityOperating Temperature - JunctionPower Dissipation (Max)Package CooledThermal ResistanceThermal Resistance @ NaturalPackage / CaseMaterial FinishOperating Temperature
NTE3323
NTE3323

Transistor; Bipolar; N-Channel; 1200 V; 25 ADC; 50 A @ 1 ms; + 20 V; ? degC Trans IGBT Chip N-CH 1.2KV 25A 3-Pin IGBT N-CHANNEL ENHANCEMENT 1200V IC=25AMP TO-3P CASE HIGH SPEED SWITCH

NTE Electronics

101: ¥217.60N-Channel--1200 V25 A------3200 pF0.40 μs (Typ.)200 W3200 pF (Typ.)0.80 μs (Typ.)3 V± 20 VN-Channel+150 °C-------
NTE3322
NTE3322

Transistor; Bipolar; N-Channel; 900 V; 60 ADC; 120 A @ 1 ms; + 25 V; ? degC Trans IGBT Chip N-CH 900V 60A 3-Pin IGBT N-CHANNEL ENHANCEMENT 900V IC=60A TO-3P CASE HIGH SPEED SWITCH

NTE Electronics

101: ¥217.60N-Channel--900 V60 A------5300 pF0.35 μs (Typ.)200 W5300 pF (Typ.)0.50 μs (Typ.)2.4 V± 25 VN-Channel+150 °C-TO-264VAR0.625 °C⁄W (Junction to Case)0.625 °C/W---
NTE2387
3
NTE2387

MOSFET; Power; N-Channel; 2.7 Ohms (Typ.); 800 V (Min.); 800 V; 4 A @ 25 degC Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220 MOSFET, N CHANNEL, 800V, 4A, TO-220 POWER MOSFET N-CHANNEL 800V ID=4A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MODE

NTE Electronics

101: ¥114.3624:N Channel854129000.005--:10V:3V:2.7ohm:800V:4A:3---------:125W---:TO-220:-:150°C
NTE2396
3
NTE2396

MOSFET; Enhancement mode; N-Channel; 0.077 Ohm (Max.); 100 V (Min.); 28 A Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220 ENHANCEMENT MODE N-CH MOSFET, 100V, 28A, TO-220 POWER MOSFET N-CHANNEL 100V ID=28A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MOD

NTE Electronics

501: ¥40.664:N Channel854129000--:10V:2V:0.077ohm:100V:28A-----------------
NTE3320
NTE3320

Trans IGBT Chip N-CH 600V 50A 3-Pin(3+Tab) TO-3P SINGLE IGBT, 600V, 50A

NTE ELECTRONICS

101: ¥183.192:IGBT854129000.023:2V:50A-----:3---------:200W------
NTE2989
NTE2989

Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 N CH MOSFET, 600V, 10A, TO-220VAR

NTE ELECTRONICS

101: ¥65.824:N Channel854129000.002--:10V:4V:1ohm:600V:10A:3----------------
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