Home
Manufacturer
NXP Semiconductors N.V.
High-Power Discrete Semiconductor Modules

NXP Semiconductors N.V.- High-Power Discrete Semiconductor Modules

NXP Semiconductors N.V. is a global semiconductor company headquartered in Eindhoven, Netherlands, with over 50 years of innovation history, originally part of Philips and independently established in 2006. The company focuses on High Performance Mixed Signal (HPMS) and standard product solutions, combining leadership in RF, analog, power management, interface, security, and digital processing. Its core business areas span automotive, industrial & IoT, mobile, and communication infrastructure, serving leading OEMs worldwide. NXP offers a comprehensive product portfolio including the i.MX applications processors, LPC and Kinetis microcontroller series, S32 automotive platform, QorIQ/Layerscape communication processors, and secure identification solutions like MIFARE and SmartMX. In the automotive sector, it provides vehicle networking, secure access, and advanced driver-assistance systems (ADAS), with the S32 domain controller chips widely adopted. The company is recognized as the number one supplier in automotive semiconductors and secure identification (NFC), holding leading shares in automotive MCUs and car access systems. Following the 2015 merger with Freescale Semiconductor, NXP significantly strengthened its embedded processing capabilities and scale. It also maintains strong positions in RF power amplifiers, sensor solutions (e.g., FXOS/FXLS accelerometers), and edge computing platforms. Globally, NXP ranks among the top 10 semiconductor vendors by revenue, with over 60% of sales generated from the Asia-Pacific region, underscoring its deep engagement with local markets.

High-Power Discrete Semiconductor Modules - 型号列表

21 parts in total

Mfr Part #	Quantity Available	Price	Part Status	Packaging	Series	Mounting Type	Package / Case	Supplier Device Package	Manufacturer	Technology	Gain	Frequency	Noise Figure	Current - Output	Configuration	Power - Output	Voltage - Test	Voltage Rating	Current Rating (Amps)	Mfr	Grade	Qualification	FET Feature	Vgs(th) (Max) @ Id	Operating Temperature	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25degC	P1dB	Test Frequency	Voltage - Supply	RF Type	FET Type	Vgs (Max)	Power Dissipation (Max)	Base Product Number
A3I20X050NR1 AIRFAST RF LDMOS WIDEBAND INTEGR NXP USA Inc.	-		Obsolete	Tape & Reel (TR)	A3I20X050N	Surface Mount	OM-400-8	OM-400-8	NXP USA Inc.	-	29.3dB	1.8GHz ~ 2.2GHz	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	20V ~ 32V	-	-	-	-	-
PMZB950UPEL315 Order NXP Semiconductors PMZB950UPEL315 (2156-PMZB950UPEL315-954-ND) at . , view product specifications, and order online. NXP Semiconductors N.V.	-		Active	Bulk	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NXP Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G35S004NT6 . A5G35S004NT6 - RF Mosfet 48 V 12 mA 3.3GHz ~ 4.3GHz 16.9dB 24.5dBm 6-PDFN (4x4.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		Obsolete	Tape & Reel (TR)	-	Surface Mount	6-LDFN Exposed Pad	6-PDFN (4x4.5)	NXP USA Inc.	GaN	16.9dB	3.3GHz ~ 4.3GHz	-	12 mA	-	24.5dBm	48 V	125 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G23H065NT4 . A5G23H065NT4 - RF Mosfet 48 V 30 mA 2.3GHz ~ 2.4GHz 15.5dB 8.8W 6-PDFN (7x6.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		Obsolete	Tape & Reel (TR)	-	Surface Mount	6-LDFN Exposed Pad	6-PDFN (7x6.5)	NXP USA Inc.	GaN	15.5dB	2.3GHz ~ 2.4GHz	-	30 mA	-	8.8W	48 V	125 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PBHV8115TLH215 Order NXP Semiconductors PBHV8115TLH215 (2156-PBHV8115TLH215-954-ND) at . , view product specifications, and order online. NXP Semiconductors N.V.	4000	958: ¥2.108	Active	Bulk	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NXP Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SA2T18H450W19SR6 . SA2T18H450W19SR6 - RF Mosfet 30 V 800 mA 1.805GHz ~ 1.88GHz 16.6dB 89W NI-1230S-4S4S from NXP Semiconductors. from now! NXP Semiconductors N.V.	-		Obsolete	Bulk	-	Chassis Mount	NI-1230S-4S4S	NI-1230S-4S4S	NXP Semiconductors	LDMOS	16.6dB	1.805GHz ~ 1.88GHz	-	800 mA	Dual	89W	30 V	65 V	10µA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G35H110NT4 . A5G35H110NT4 - RF Mosfet 48 V 70 mA 3.3GHz ~ 3.7GHz 15.3dB 15.1W 6-PDFN (7x6.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		Obsolete	Tape & Reel (TR)	-	Surface Mount	6-LDFN Exposed Pad	6-PDFN (7x6.5)	NXP USA Inc.	GaN	15.3dB	3.3GHz ~ 3.7GHz	-	70 mA	-	15.1W	48 V	125 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMCM6501UNE023 Order NXP Semiconductors PMCM6501UNE023 (2156-PMCM6501UNE023-954-ND) at . , view product specifications, and order online. NXP Semiconductors N.V.	90000	480: ¥4.284	Active	Bulk	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NXP Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G26S008NT6 . A5G26S008NT6 - RF Mosfet 48 V 17 mA 2.496GHz ~ 2.69GHz 18.4dB 27dBm 6-PDFN (4x4.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		Obsolete	Tape & Reel (TR)	-	Surface Mount	6-LDFN Exposed Pad	6-PDFN (4x4.5)	NXP USA Inc.	GaN	18.4dB	2.496GHz ~ 2.69GHz	-	17 mA	-	27dBm	48 V	125 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G35S004N-3400 . A5G35S004N-3400 - RF Mosfet 48 V 12 mA 3.3GHz ~ 4.3GHz 16.9dB 24.5dBm 6-PDFN (4x4.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		Active	Bulk	-	Surface Mount	6-LDFN Exposed Pad	6-PDFN (4x4.5)	NXP USA Inc.	-	16.9dB	3.3GHz ~ 4.3GHz	-	12 mA	-	24.5dBm	48 V	125 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G37H110NT4 . A5G37H110NT4 - RF Mosfet 48 V 70 mA 3.6GHz ~ 3.8GHz 15.1dB 13.5W 6-PDFN (7x6.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		Obsolete	Tape & Reel (TR)	-	Surface Mount	6-LDFN Exposed Pad	6-PDFN (7x6.5)	NXP USA Inc.	GaN	15.1dB	3.6GHz ~ 3.8GHz	-	70 mA	-	13.5W	48 V	125 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G26H110NT4 . A5G26H110NT4 - RF Mosfet 48 V 50 mA 2.496GHz ~ 2.69GHz 17.7dB 15W 6-PDFN (7x6.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		Obsolete	Tape & Reel (TR)	-	Surface Mount	6-LDFN Exposed Pad	6-PDFN (7x6.5)	NXP USA Inc.	GaN	17.7dB	2.496GHz ~ 2.69GHz	-	50 mA	-	15W	48 V	125 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G35H120NT2 . A5G35H120NT2 - RF Mosfet 48 V 70 mA 3.3GHz ~ 3.7GHz 14.1dB 18W 10-DFN (7x10) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		Obsolete	Tape & Reel (TR)	-	Surface Mount	10-PowerLDFN	10-DFN (7x10)	NXP USA Inc.	GaN	14.1dB	3.3GHz ~ 3.7GHz	-	70 mA	-	18W	48 V	125 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A3G26D055N-2600 . A3G26D055N-2600 - RF Mosfet 48 V 40 mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		Active	Bulk	-	Surface Mount	6-LDFN Exposed Pad	6-PDFN (7x6.5)	NXP USA Inc.	-	13.9dB	100MHz ~ 2.69GHz	-	40 mA	-	8W	48 V	125 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G35H110N-3400 . A5G35H110N-3400 - RF Mosfet 48 V 70 mA 3.3GHz ~ 3.7GHz 15.3dB 15.1W 6-PDFN (7x6.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	10	1: ¥3,848.46	Active	Bulk	-	Surface Mount	6-LDFN Exposed Pad	6-PDFN (7x6.5)	NXP USA Inc.	-	15.3dB	3.3GHz ~ 3.7GHz	-	70 mA	-	15.1W	48 V	125 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMV100XPEA215 . PMV100XPEA215 - P-Channel 20 V 2.4A (Ta) 463mW (Ta), 4.45W (Tc) Surface Mount SOT-23 from NXP Semiconductors. from now! NXP Semiconductors N.V.	-		Obsolete	Bulk	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-	MOSFET (Metal Oxide)	-	-	-	-	-	-	-	-	-	NXP Semiconductors	Automotive	AEC-Q101	-	1.25V @ 250µA	-55°C ~ 150°C (TJ)	128mOhm @ 2.4A, 4.5V	6 nC @ 4.5 V	20 V	386 pF @ 10 V	2.4A (Ta)	-	-	-	-	P-Channel	±12V	463mW (Ta), 4.45W (Tc)	-
A5G38H045NT4 . A5G38H045NT4 - RF Mosfet from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		Obsolete	Tape & Reel (TR)	*	-	-	-	NXP USA Inc.	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N7002PS/ZLX . 2N7002PS/ZLX - Mosfet Array 60V 320mA Surface Mount 6-TSSOP from NXP Semiconductors. from now! NXP Semiconductors N.V.	-		Not For New Designs	Bulk	-	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP	NXP Semiconductors	MOSFET (Metal Oxide)	-	-	-	-	2 N-Channel (Dual)	-	-	-	-	-	-	-	Logic Level Gate	2.4V @ 250µA	150°C (TJ)	1.6Ohm @ 500mA, 10V	0.8nC @ 4.5V	60V	50pF @ 10V	320mA	-	-	-	-	-	-	-	2N7002
MRF300AN-27MHZ . MRF300AN-27MHZ - RF Mosfet 50 V 100 mA 1.8MHz ~ 250MHz 28.2dB 300W 3-SIL from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		Active	Bulk	-	Through Hole	3-SIP	3-SIL	NXP USA Inc.	LDMOS	28.2dB	1.8MHz ~ 250MHz	-	100 mA	-	300W	50 V	133 V	10µA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
A5G35S008N-3400 . A5G35S008N-3400 - RF Mosfet 48 V 24 mA 3.3GHz ~ 3.8GHz 18.6dB 27dBm 6-PDFN (4x4.5) from NXP USA Inc.. from now! NXP Semiconductors N.V.	-		Active	Bulk	-	Surface Mount	6-LDFN Exposed Pad	6-PDFN (4x4.5)	NXP USA Inc.	-	18.6dB	3.3GHz ~ 3.8GHz	-	24 mA	-	27dBm	48 V	125 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

Page 1 / 2

NXP Semiconductors N.V.- High-Power Discrete Semiconductor Modules

High-Power Discrete Semiconductor Modules - 型号列表

Gain

Frequency

Power - Output

Current - Output

Supplier Device Package

Package / Case

Part Status

Mounting Type

Technology

Voltage - Test

Voltage Rating

Packaging

Series

Manufacturer

Configuration

Vgs(th) (Max) @ Id

Operating Temperature

Rds On (Max) @ Id, Vgs

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25degC