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onsemi- DDR SDRAM Memory Chips

onsemi (formerly ON Semiconductor) is a premier supplier of high-performance, energy-efficient silicon solutions for green electronics, headquartered in Phoenix, Arizona, USA. Founded in 1999 as a spin-off from Motorola's semiconductor division, it has grown into a global innovator. The core business covers power management, signal processing, logic, discrete, and custom semiconductor devices for automotive, industrial, communications, computing, consumer, medical, and military/aerospace applications. Its product portfolio includes power discrete and modules such as MOSFETs, IGBTs, and EliteSiC silicon carbide devices, along with power management ICs like LDOs, DC-DC converters, and controllers. In signal management, it offers operational amplifiers, comparators, voltage references, and data converters. Through the Catalyst Group acquisition, the company provides programmable memory products like EEPROM, Flash, NVRAM, and digital potentiometers. Sensor offerings include CMOS image sensors, LiDAR, ultrasonic, and proximity sensors for ADAS and smart sensing. onsemi operates a worldwide network of manufacturing facilities, design centers, and sales offices across North America, Europe, and Asia-Pacific. In 2009, it reported revenues of $1.769 billion, and as of 2024, it is a Fortune 500 company and a top-20 global semiconductor supplier, with a strong leadership position in automotive and industrial power semiconductors.

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DDR SDRAM Memory Chips - 型号列表

326 parts in total

Standard Package

Voltage Rating

Package / Case

Density

Number of Words

Operating Temperature

Mfr Part #Quantity AvailablePriceStandard PackageVoltage RatingPackage / CaseDensityNumber of WordsOperating TemperatureOther NamesProduct CategoryFactory Pack QuantityRoHSRad HardenedESD ProtectionSpeedFrequencyInterfaceClock RateAccess TimeMemory SizeMemory TypeData ConvertersFrequency - MaxCurrent - OutputCurrent - SupplyVoltage - SupplyCurrent Rating (Max)Voltage - Supply (Min)Number of Bits per ElementWrite Cycle Time - Word, PageCurrent - Average Rectified (Io)WidthHeightLengthPackagingMounting TypeMounting StyleNumber of PinsPackage CooledPackage QuantitySize / DimensionNumber of PositionsSupplier Device PackageSeriesDELETEDFunctionBit CountStructureManufacturerProgrammableMemory FormatNumber of CharactersRAM Capacity/InstalledOperating Temperature - JunctionNumber of I/ONumber of PortsNumber of AddressesTiming Adjustment Method
CAT34C02YI-GT5
4
CAT34C02YI-GT5

EEPROM Serial-I2C 2K-bit 256 x 8 1.8V/2.5V/3.3V/5V 8-Pin TSSOP T/R IC EEPROM 2KBIT 400KHZ 8TSSOP EEPROM Serial-I2C 2K 256x8 1.8/5V TSSOP8 EEPROM 2K-Bit I2C Serial EEPROM,SPD EEPROMSerial-I2C2K256x81.8/5VTSSOP8 ON Semiconductor CAT34C02YI-G EEPROM 存储器, 2kbit, 256 x, 8bit, 串行 - I2C接口, 900ns, 1.7 → 5.5 V, 8针 TSSOP封装

on semiconductor

101: ¥0.90Cut Tape, Tape & Reel1.8|2.5|3.3|5 V8TSSOP2 Kb256-40 to 85 °CCAT34C02YI-GT5OSCTEEPROM5000Lead free / RoHS CompliantNoYes400kHz0.4 MHzSerial-I2C0.4 MHz900 ns2K (256 x 8)EEPROM100(Min) Year0.4 MHz2 mA2 mA1.7 V ~ 5.5 V1 mA5.5 V8bitYes2 mA3.1mm1.05mm4.5mmTape & Reel (TR)Surface MountSMD/SMT8TSSOPTSSOP4.5 x 3.1 x 1.05mm88-TSSOPCAT34C02CompliantY8Bit256 x 8 位256x8YesEEPROMs - Serial2562Kbit85C----
N01L163WC2AB2-55I TR
N01L163WC2AB2-55I TR

1MB, X16, 3V SRAM

on semiconductor

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N01L163WC2AT2-55I TR
N01L163WC2AT2-55I TR

1MB, X16, 3V SRAM

on semiconductor

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N01L163WN1AB2-55I TR
N01L163WN1AB2-55I TR

1MB, X16, 3V SRAM

on semiconductor

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N02L083WC2AT2-55I TR
N02L083WC2AT2-55I TR

2MB, X8, 3V SRAM

on semiconductor

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N02L1618C1AB2-70I TR
N02L1618C1AB2-70I TR

2MB, X8, 1.8V SRAM

on semiconductor

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N02L163WC2AT2-55I TR
N02L163WC2AT2-55I TR

2MB, X16, 3V SRAM

on semiconductor

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N04L1618C2AB2-70I TR
N04L1618C2AB2-70I TR

4MB, X16, 1.8V SRAM

on semiconductor

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N04L1618C2BB2-70I
N04L1618C2BB2-70I

4MB, X16, 1.8V SRAM

on semiconductor

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N04L1630C2BT2-55I TR
N04L1630C2BT2-55I TR

4MB, X16, 3V SRAM

on semiconductor

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N04L1630C2BT2-70I
N04L1630C2BT2-70I

4MB, X16, 3V SRAM

on semiconductor

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N04L163WC2AB2-70I TR
N04L163WC2AB2-70I TR

4MB, X16, 3V SRAM

on semiconductor

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N04Q1618C2BB2-70C TR
N04Q1618C2BB2-70C TR

4MB, X16, 1.8V DR SRAM

on semiconductor

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N04L1618C2BT2-70I
N04L1618C2BT2-70I

4MB, X16, 1.8V SRAM

on semiconductor

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N04L1618C2BT2-70I TR
N04L1618C2BT2-70I TR

4MB, X16, 1.8V SRAM

on semiconductor

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N04L1630C2BB2-55I
N04L1630C2BB2-55I

4MB, X16, 3V SRAM

on semiconductor

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N04L1630C2BB2-70I
N04L1630C2BB2-70I

4MB, X16, 3V SRAM

on semiconductor

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N04L1630C2BB2-70I TR
N04L1630C2BB2-70I TR

4MB, X16, 3V SRAM

on semiconductor

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N04L1630C2BT2-55I
N04L1630C2BT2-55I

4MB, X16, 3V SRAM

on semiconductor

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N04Q1618C2BB2-70C
N04Q1618C2BB2-70C

SRAM Chip Async Single 1.8V 4M-Bit 256K x 16 70ns 48-Pin BGA

on semiconductor

-Trays1.8 V48BGA4 Mb256 K0 to 70 °C----------------------------------------------16 Bit118 BitAsynchronous
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