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onsemi

onsemi- Bipolar Transistors - General

onsemi (formerly ON Semiconductor) is a premier supplier of high-performance, energy-efficient silicon solutions for green electronics, headquartered in Phoenix, Arizona, USA. Founded in 1999 as a spin-off from Motorola's semiconductor division, it has grown into a global innovator. The core business covers power management, signal processing, logic, discrete, and custom semiconductor devices for automotive, industrial, communications, computing, consumer, medical, and military/aerospace applications. Its product portfolio includes power discrete and modules such as MOSFETs, IGBTs, and EliteSiC silicon carbide devices, along with power management ICs like LDOs, DC-DC converters, and controllers. In signal management, it offers operational amplifiers, comparators, voltage references, and data converters. Through the Catalyst Group acquisition, the company provides programmable memory products like EEPROM, Flash, NVRAM, and digital potentiometers. Sensor offerings include CMOS image sensors, LiDAR, ultrasonic, and proximity sensors for ADAS and smart sensing. onsemi operates a worldwide network of manufacturing facilities, design centers, and sales offices across North America, Europe, and Asia-Pacific. In 2009, it reported revenues of $1.769 billion, and as of 2024, it is a Fortune 500 company and a top-20 global semiconductor supplier, with a strong leadership position in automotive and industrial power semiconductors.

03

Bipolar Transistors - General - 型号列表

3,444 parts in total

DC Current Gain (hFE) (Min) @ Ic, Vce

Vce Saturation (Max) @ Ib, Ic

Package / Case

Standard Package

Voltage - Supply

Current - Collector Cutoff (Max)

Vce Saturation (Max)

Power Dissipation (Max)

Vce(on) (Max) @ Vge, Ic

Voltage - Input (Min)

Frequency - Transition

Current - Collector (Ic) (Max)

Factory Pack Quantity

Power - Max

Power - Rated

Frequency - Max

Supplier Device Package

Other Names

Gain Bandwidth Product

Standard Package Name

Voltage - Supply (Max)

Packaging

Package Quantity

Frequency

Width

Weight

Lead Style

Resistor - Base (R1)

Product Category

RoHS

Tariff No

Transistor Type

Voltage - Collector Emitter Breakdown (Max)

Package Cooled

Configuration

Operating Temperature

Resistor Matching Ratio

SVHC

Number of Elements

Resistance @ 25degC

Height

Length

Mounting Type

Mounting Style

Number of Pins

Material Finish

Size / Dimension

Number of Positions

Type

Card Standard

Series

Length - Overall

Shell Size - Insert

Mfr Part #Quantity AvailablePriceTransistor TypeVoltage - SupplyCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VcePackage / CaseRoHSPackagingMounting StyleOperating TemperatureVce Saturation (Max) @ Ib, IcConfigurationProduct CategoryMounting TypeStandard PackageFactory Pack QuantityPower - MaxCurrent - Collector (Ic) (Max)Supplier Device PackagePower - RatedPower Dissipation (Max)Vce(on) (Max) @ Vge, IcGain Bandwidth ProductFrequency - TransitionMechanical LifeVce Saturation (Max)Voltage - Input (Min)Number of PositionsTypeStandard Package NameEU RoHSFrequency - MaxNumber of ElementsLead StylePackage QuantityVoltage - Supply (Max)Other NamesTariff NoRad HardenedFrequencyVoltage - Collector Emitter Breakdown (Max)WeightNumber of PinsPackage CooledWidthResistor - Base (R1)Current - Collector Pulsed (Icm)SVHCMaterial FinishPrimary MaterialPolarityResistance @ 25degCHeightLengthSize / DimensionCard StandardResistor Matching RatioSeriesLength - OverallShell Size - InsertPrinted Circuit BoardRise / Fall Time (Typ)Pin Hole DiameterMeasurement TypeUtilized IC / PartSpgNumber of UnitsResistor - Emitter Base (R2)Power - Average ForwardCommon Mode Transient Immunity (Min)TechnologyManufacturerTermination
2N4401G
6
2N4401G

Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 Bulk TRANS SS NPN GP 40V 600MA TO-92 2N4401G, NPN Bipolar Transistor, 0.6A 40V HFE:20V 250MHz Small Signal, 3-Pin TO-92 Transistors Bipolar - BJT 600mA 60V NPN TRANSISTOR, NPN, TO-92 SST092GPXSTRNPN40V-LEADFREE ON Semiconductor , NPN 双极晶体管, 0.6 A, Vce=40 V, HFE:20, 250 MHz, 3针 TO-92封装

on semiconductor

101: ¥0.25NPN40V0.6 A20@0.1mA@1V|40@1mA@1V|80@10mA@1V|100@150mA@1V|40@500mA@2V3TO-92Lead free / RoHS CompliantBulkThrough Hole-55 to 150 °C750mV @ 50mA, 500mASingleTransistors Bipolar - BJTThrough HoleBoxed, Bulk5000625mW600mATO-92-30.625 W625 mW60 V250 MHz250MHz-0.75 V40 V3NPNTO-92Compliant250(Min) MHz1Through HoleTO-926 V-85412900No250 MHz6 V0.0002:3TO-924.19mm--:No SVHC (20-Jun-2013):MSL 1 - UnlimitedSiNPN83.3°C/W5.33mm5.2mm5.33 x 5.2 x 4.19mmBipolar Small Signal-----:255ns:b:150mA:2N4401--------
2N5401RLRAG
4
2N5401RLRAG

Trans GP BJT PNP 150V 0.6A 3-Pin TO-92 T/R TRANS PNP GP SS 0.6A 150V TO92 Transistors Bipolar - BJT 500mA 160V PNP BIPOLAR TRANSISTOR, PNP -150V TO-92 BIPOLAR TRANSISTOR, PNP -150V TO-92, FULL REEL

on semiconductor

101: ¥0.69PNP150V0.6 A50@1mA@5V|60@10mA@5V|50@50mA@5V3TO-92Lead free / RoHS CompliantTape and ReelThrough Hole-55 to 150 °C500mV @ 5mA, 50mASingleTransistors Bipolar - BJTThrough HoleTape & Reel2000625mW600mATO-92-30.625 W625 mW160 V300 MHz300MHz-0.5 V150 V3PNPTO-92Compliant300 MHz1FormedTO-9252N5401RLRAGOSTR85412100No300 MHz5 V0.00023:3TO-92-----------------------------
2N5551G
6
2N5551G

Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk TRANS NPN SS GP 0.6A 160V TO-92 2N5551G, NPN Bipolar Transistor, 0.6A 160V HFE:30V 300MHz Small Signal, 3-Pin TO-92 Transistors Bipolar - BJT 600mA 180V NPN BIPOLAR TRANSISTOR, NPN, 160V TO-92 TRANSISTOR, NPN, 160V, 0.6A, TO92 SST092RFXSTRNPN160V-LEADFREE

on semiconductor

7091: ¥0.6188NPN160V0.6 A80@1mA@5V|80@10mA@5V|30@50mA@5V3TO-92Lead free / RoHS CompliantBulkThrough Hole-55 to 150 °C200mV @ 5mA, 50mASingleTransistors Bipolar - BJTThrough HoleBoxed, Bulk5000625mW600mATO-92-30.625 W625 mW180 V300 MHz300MHz-0.25 V160 V3NPNTO-92Compliant300 MHz1Through HoleTO-926 V-85412900No300 MHz6 V0.002:3TO-924.19mm--:No SVHC (20-Jun-2013):MSL 1 - UnlimitedSiNPN83.3°C/W5.33mm5.2mm5.33 x 5.2 x 4.19mmBipolar Small Signal-----------------
MPSA06RLRAG
5
MPSA06RLRAG

Trans GP BJT NPN 80V 0.5A 3-Pin TO-92 T/R Transistors Bipolar - BJT 500mA 80V NPN TRANS NPN GP SS 80V TO92 BIPOLAR TRANSISTOR, NPN, 80V, TO-92 ON Semiconductor , NPN 晶体管, 0.5 A, Vce=80 V, HFE:100, 100 MHz, 3针 TO-92封装

on semiconductor

258865: ¥0.5304NPN80 V0.5 A100@10mA@1V|100@100mA@1V3TO-92RoHS CompliantReelThrough Hole-55 to 150 °C4 VSingleTransistors Bipolar - BJTThrough HoleTape & Reel2000625mW500mATO-92-30.625 W625 mW80 V100 MHz100MHz-80 V80 V3NPN--100(Min) MHz1---MPSA06RLRAGOSCT85411000No100 MHz4 V0.002:3TO-92-----------------------------
MJ15023
MJ15023

Transistors Bipolar - BJT 16A 200V 250W PNP Trans GP BJT PNP 200V 16A 3-Pin(2+Tab) TO-204 Tray

ON Semiconductor

-------------------------------------------------------------------------
FZT790A_Q
FZT790A_Q

Transistors Bipolar - BJT PNP Transistor Low Saturation

onsemi

-PNP40 V3 A300SOT-223NoReelSMD/SMT+ 150 C5 VSingle--------2 W50 V100 MHz-Obsolete------------------------------------------------
BUX85G
8
BUX85G

Trans GP BJT NPN 450V 2A 3-Pin(3+Tab) TO-220AB Rail TRANS NPN 2A 450V 50W TO220AB BUX85G, NPN Bipolar Transistor, 2A 450V HFE:30V 4MHz Power, 3-Pin TO-220AB Transistors Bipolar - BJT 2A 450V 50W NPN BIPOLAR, TRANSISTOR BIPT0220NPN2A450V Transistor: NPN; bipolar; 1kV; 2A; 40W; TO66 Power transistor TO-220AB NPN 450 V, BUX85G, ON Semiconductor Bipolar Transistors - BJT 2A 450V 50W NPN

on semiconductor

101: ¥6.40NPN450V2 A30@100mA@5V3TO-220ABLead free / RoHS CompliantRailThrough Hole-65 to 150 °C1V @ 200mA, 1ASingleTransistors Bipolar - BJTThrough HoleRail / Tube5050W2ATO-220AB50 W50000 mW1 kV4 MHz4MHz-1 V450 V3NPNTO-220Compliant4(Min) MHz1Through HoleTO-220AB5 VBUX85GOS85412100No4 MHz5 V0.002:3TO-220AB4.82mm--:No SVHC (20-Jun-2013):-SiNPN2.5°C/W9.28mm10.28mm9.28 x 10.28 x 4.82mmBipolar Power---------1001------
KSE13005FH2
KSE13005FH2

Transistors Bipolar - BJT

onsemi

-NPN400 V4 A10TO-220FNo-Through Hole+ 150 C9 V---------30000 mW700 V4 MHz-Obsolete------------------------------------------------
PN2222ABU_Q
PN2222ABU_Q

Transistors Bipolar - BJT NPN Transistor General Purpose

onsemi

-NPN40 V1 A35 at 0.1 mA at 10 VTO-92NoBulkThrough Hole+ 150 C6 VSingle--------0.5 W75 V300 MHz-Obsolete40 V-----------------------------------------------
MJD3055
MJD3055

Transistors Bipolar - BJT 10A 60V 20W NPN TRANS POWER NPN 10A 60V DPAK Trans GP BJT NPN 60V 10A 3-Pin (2+Tab) DPAK Rail

ON Semiconductor

255630: ¥1.884NPN60V50µA20 @ 4A, 4VTO-252-3, DPak (2 Leads + Tab), SC-63-Tube--8V @ 3.3A, 10A--Surface Mount75-1.75W10ADPAK-3----2MHz-------------------------------------------------
MPSH10RLRP
MPSH10RLRP

Transistors Bipolar - BJT 25V VHF/UHF NPN

ON Semiconductor

-------------------------------------------------------------------------
BUL44G
3
BUL44G

Transistors Bipolar - BJT 2A 400V 100W NPN Trans GP BJT NPN 400V 2A 3-Pin(3+Tab) TO-220AB Rail TRANS NPN SW 400V 2A TO-220AB

ON Semiconductor

147761: ¥2.584NPN400 V2 A7TO-220-3RoHS CompliantTubeThrough Hole+ 150 C9 VSingleTransistors Bipolar - BJTThrough Hole505050W2ATO-220AB-50 W700 V13 MHz13MHzObsolete400 V4003NPNTO-220Compliant13(Typ)1Through HoleTO-220AB9---------------------SWITCHMODE™---------------
MMUN2113LT1
2
MMUN2113LT1

Transistors Switching - Resistor Biased 100mA 50V BRT PNP TRANS PREBIAS PNP 246MW SOT23-3

ON Semiconductor

55001: ¥0.272PNP50 V0.1 A80SOT-23-3RoHS CompliantReelSMD/SMT+ 150 C250mV @ 300µA, 10mASingleTransistors Switching - Resistor BiasedSurface Mount103000246mW100mASOT-23-3 (TO-236)246 mW----Obsolete-----------MMUN2113LT1OSCT--------47 KOhms100 mA---------1----------47k-----
EMA6DXV5T1
2
EMA6DXV5T1

Transistors Switching - Resistor Biased 100mA 50V BRT PNP TRANS PREBIAS DUAL PNP SOT553 TRANS 2PNP PREBIAS 0.23W SOT553

ON Semiconductor

760001: ¥0.34PNP50 V0.1 A160SOT-553-5NoReelSMD/SMT+ 150 C250mV @ 1mA, 10mADual Common EmitterTransistors Switching - Resistor BiasedSurface Mount4,000-230mW100mASOT-553230 mW----Obsolete-----------EMA6DXV5T1OSCT--------47 KOhms at NPN, 4.7 KOhms at PNP100 mA---------1 at NPN, 0.47 at PNP----------------
MUN2214T3
MUN2214T3

Transistors Switching - Resistor Biased 100mA 50V BRT NPN

ON Semiconductor

-NPN50 V0.1 A80SC-59-3RoHS CompliantReelSMD/SMT+ 150 C-SingleTransistors Switching - Resistor Biased--10000---230 mW----Obsolete--------------------10 KOhms100 mA---------0.21----------------
BC372
2
BC372

Transistors Darlington 1A 100V NPN TRANS SS DARL NPN 100V 1A TO-92

ON Semiconductor

-NPN100 V1 A8000TO-92-3 (TO-226)NoBulkThrough Hole+ 150 C12 VSingleTransistors DarlingtonThrough Hole5,0005000625mW1ATO-92-3625 mW-100 V-200MHzObsolete------------------------------------------------
NSBC143TDXV6T1G
NSBC143TDXV6T1G

Transistors Switching - Resistor Biased 100mA 50V Dual NPN Trans Digital BJT NPN 50V 100mA 6-Pin SOT-563 T/R

ON Semiconductor

101: ¥1.03NPN50 V0.1 A160SOT-563-6RoHS CompliantReelSMD/SMT+ 150 C-DualTransistors Switching - Resistor BiasedSurface Mount-4000---357 mW500---Obsolete-506NPNSOT-563Compliant--FlatSOT-563---------1.24.7 KOhms100 mA-----------1.60.556------------
NJVMJD41CT4G
2
NJVMJD41CT4G

Transistors Bipolar - BJT BIP NPN 6A 100V TR Trans GP BJT NPN 100V 6A 3-Pin(2+Tab) DPAK T/R TRANS BIP NPN 6A 100V DPAK-4 Bipolar Transistors - BJT BIP NPN 6A 100V TR

ON Semiconductor

101: ¥7.04NPN100V50µA30@0.3A@4V|15@3A@4VTO-252-3, DPak (2 Leads + Tab), SC-63Lead free / RoHS CompliantReelSMD/SMT+ 150 C1.5V @ 600mA, 6ASingleTransistors Bipolar - BJTSurface Mount2,50025001.75W6ADPAK-3-1750100 V3 MHz3MHz-1.5 V1003NPNDPAKCompliant3(Min)1Gull-wingDPAK5---------------------MJD41C----------1.75 WAutomotiveSiON Semiconductor-
NSBA143TDXV6T1G
2
NSBA143TDXV6T1G

Transistors Switching - Resistor Biased 100mA 50V Dual PNP TRANS PREBIAS DUAL PNP SOT563 TRANS 2PNP PREBIAS 0.5W SOT563

ON Semiconductor

200001: ¥0.884PNP50 V- 0.1 A160SOT-563-6RoHS CompliantReelSMD/SMT+ 150 C250mV @ 1mA, 10mADualTransistors Switching - Resistor BiasedSurface Mount14000500mW100mASOT-563357 mW----Obsolete-----------NSBA143TDXV6T1GOSCT--------4.7 KOhms100 mA--------------------------
MBT3904DW1T1G
7
MBT3904DW1T1G

Trans GP BJT NPN 40V 0.2A 6-Pin SOT-363 T/R Trans GP BJT NPN 40V 0.2A 6-Pin SC-88 T/R TRANS DUAL NPN 40V 200MA SC88 Transistors Bipolar - BJT 200mA 60V Dual NPN TRANSISTOR, NPN, 40V, 200MA, SOT-363-6 BIPOLAR TRANSISTOR TRANSISTOR;150MWDISSIPATION;SOT-363 Bipolar Transistors - BJT 200mA 60V Dual NPN

on semiconductor

4906290: ¥0.17252 NPN (Dual)40V0.2 A40@0.1mA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V6SOT-363Lead free / RoHS CompliantTape and ReelSMD/SMT-55 to 150 °C300mV @ 5mA, 50mADualTransistors Bipolar - BJTSurface MountCut Tape, Tape & Reel3000150mW200mASC-88/SC70-6/SOT-3630.15 W150 mW60 V300 MHz300MHz-0.3 V40 V6NPNSOT-23Compliant300(Min) MHz2Gull-wingSC-886MBT3904DW1T1GOSTR85411000No300 MHz6 V0.000006:6SOT-3631.25--:No SVHC (16-Dec-2013):MSL 1 - UnlimitedSiNPN-------20.96-----------:SMD
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